Thermoelectrically cooled arsenic diffused medium-wavelength infrared HgCdTe photodiodes

Robert Ciupa; Antoni Rogalski; Jolanta Rutkowska; Jozef Piotrowski

doi:10.1117/12.165820

1 May 1994 Thermoelectrically cooled arsenic diffused medium-wavelength infrared HgCdTe photodiodes

Robert Ciupa, Antoni Rogalski, Jolanta Rutkowska, Jozef Piotrowski

Author Affiliations +

Optical Engineering, Vol. 33, Issue 5, (May 1994). https://doi.org/10.1117/12.165820

Abstract

The performance of thermoelectrically cooled p⁺ -n medium-wavelength infrared (MWIR) HgCdTe photodiodes is analyzed. The effect of doping profile on the photodiode parameters (R₀A product, quantum efficiency) is solved by forward-condition steady-state analysis. Results of calculations are compared with experimental data. The p⁺ -n homojunctions are formed by arsenic diffusion in HgCdTe epilayers. MWIR photodiodes effectively operate at elevated temperatures around 200 K and exhibit background-limited photodetection (BLIP) performance when monolithic optical immersion is used.

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Robert Ciupa, Antoni Rogalski, Jolanta Rutkowska, and Jozef Piotrowski "Thermoelectrically cooled arsenic diffused medium-wavelength infrared HgCdTe photodiodes," Optical Engineering 33(5), (1 May 1994). https://doi.org/10.1117/12.165820

Published: 1 May 1994

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