It was shown that the concentration of charge carriers and the stoichiometry of near-surface region are changed in p-type HgCdTe films with non-passivated and soiled by indium surface under storage temperatures 80°C and 120°C. The concentration of holes increased up to 10²⁴ cm ^{− 3} and mobility dropped up to 12 cm² / ( V × s ) under heating. From acquired Auger spectra, it was obtained that the mercury concentration decreased but the cadmium concentration increased in near-surface region as the indium spot approached. The surface passivation by photoresist prevented these degradation processes. The current–voltage characteristics of p-n junctions around the indium spots on the surface of p-type HgCdTe films passivated by SiO₂ / Si₃N₄ layers were measured after storage temperatures from 60°C up to 120° C. It was found that the p-n junctions closest to the indium spots have an increased dark current. The usage of an additional passivation layer of anodic oxide suppressed the appearance of regions with increased dark currents. It was concluded that the additional passivation layer of anodic oxide is necessary for durable and stable work of infrared detector arrays based on HgCdTe films.