Dr. Alain G. Deleporte Profile

Dr. Alain G. Deleporte

at STMicroelectronics

SPIE Involvement:

Author

Proceedings Article | 16 July 2002 Paper

Productivity enhancements in recipe creation for overlay metrology measurements

Vincent Vachellerie, Delia Ristoiu, Alain Deleporte, Marc Poulingue, Yannick Bedin, Rolf Arendt, Ganesh Sundaram, Paul Knutrud

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473492

KEYWORDS: Semiconducting wafers, Overlay metrology, Metrology, Time metrology, Optical alignment, Process control, Prototyping, Metals, Niobium, Semiconductors

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Proceedings Article | 16 July 2002 Paper

Overlay metrology results on leading-edge Cu processes

Vincent Vachellerie, Delia Ristoiu, Alain Deleporte, Pierre-Olivier Sassoulas, Philippe Spinelli, Marc Poulingue, Pascal Fabre, Rolf Arendt, Ganesh Sundaram, Paul Knutrud

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473461

KEYWORDS: Overlay metrology, Semiconducting wafers, Copper, Image processing, Metals, Precision measurement, Pattern recognition, Detection and tracking algorithms, Metrology, Optical alignment

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Proceedings Article | 18 August 2000 Paper

Benchmarking of advanced CD-SEMs against a new unified specification for sub-0.18-um lithography

Alain Deleporte, John Allgair, Charles Archie, G. Banke, Michael Postek, Jerry Schlesinger, Andras Vladar, Arnold Yanof

Proceedings Volume 4181, (2000) https://doi.org/10.1117/12.395750

KEYWORDS: Lithography, Standards development, Scanning electron microscopy, Electron microscopes

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Proceedings Article | 2 June 2000 Paper

Benchmarking of advanced CD-SEMs against the new unified specification for sub-0.18-um lithography

Alain Deleporte, John Allgair, Charles Archie, G. Banke, Michael Postek, Jerry Schlesinger, Andras Vladar, Arnold Yanof

Proceedings Volume 3998, (2000) https://doi.org/10.1117/12.386524

KEYWORDS: Semiconducting wafers, Scanning electron microscopy, Metrology, Atomic force microscopy, Wafer testing, Contamination, Manufacturing, Critical dimension metrology, Lithography, Standards development

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The Advanced Metrology Advisory Group (AMAG) comprised of representatives from International SEMATECH consortium member companies and the National Institute of Standards and Technology have joined to develop a new unified specification for an advanced scanning electron microscope critical dimension measurement instrument (CD-SEM). (Allgair, et al., 1998) This paper describes the results of an effort to benchmark six CD-SEM instruments according to this specification. The consensus among the AMAG metrologists was that many critical areas of performance of CD-SEMs required improvement. Following this assessment this specification for benchmarking was developed. The advanced CD-SEM specification addresses several critical areas for improvement, each with its own a separate section. The critical areas covered are: precision, accuracy, charging and contamination, performance matching, pattern recognition and stage navigation accuracy, throughput, and instrumentation outputs. Each section of the specification contains a concise definition of the respective performance parameter, and wherever appropriate refers to ISO definitions. The test methodology is described, complete with the relevant statistical analysis. Many parameters (including precision, matching, and magnification accuracy) are numerically specified to be consistent with the International Technology Roadmap for Semiconductors (ITRS, 1999). Other parameters, such as charging and linewidth accuracy, are targeted with guidelines for improvement. The test wafers developed for determining the level of compliance with the specification are also discussed. The AMAG circulated this report among the metrology instrument suppliers and conferred with them. Certain components of the specification have already been adopted by some of the manufacturers in their newer metrology instruments. International SEMATECH fabricated the AMAG test wafers described herein. Measurements on six state-of-the-art metrology instruments using the AMAG test wafers have been carried out and the results were processed according to this specification. A review of the results is presented in this paper.

Proceedings Article | 2 June 2000 Paper

Phase profilometry for the 193-nm lithography gate stack

Nickhil Jakatdar, Xinhui Niu, Junwei Bao, Costas Spanos, Sanjay Yedur, Alain Deleporte

Proceedings Volume 3998, (2000) https://doi.org/10.1117/12.386464

KEYWORDS: Fourier transforms, Metrology, Lithography, Diffraction gratings, Diffraction, Thin films, Spectroscopy, Reflectance spectroscopy, Curium, Reflectometry

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Conference Committee Involvement (8)

Metrology, Inspection, and Process Control for Microlithography XXIV

22 February 2010 | San Jose, California, United States

Metrology, Inspection, and Process Control for Microlithography XXIII

23 February 2009 | San Jose, California, United States

Metrology, Inspection, and Process Control for Microlithography XXII

25 February 2008 | San Jose, California, United States

Metrology, Inspection, and Process Control for Microlithography XXI

26 February 2007 | San Jose, California, United States

Metrology, Inspection, and Process Control for Microlithography XX

20 February 2006 | San Jose, California, United States

Showing 5 of 8 Conference Committees

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