Dr. Alden R. Acheta Profile

Dr. Alden R. Acheta

Senior Manufacturing Engineer at Spansion Inc

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Author

Publications (19)

Proceedings Article | 15 April 2008 Paper

A lithographic and process assessment of photoresist stabilization for double-patterning using 172-nm photoresist curing

Nikolaos Bekiaris, Hiram Cervera, Junyan Dai, Ryoung-han Kim, Alden Acheta, Thomas Wallow, Jongwook Kye, Harry Levinson, Thomas Nowak, James Yu

Proceedings Volume 6923, 692321 (2008) https://doi.org/10.1117/12.774205

KEYWORDS: Photoresist processing, Photoresist materials, Double patterning technology, Ultraviolet radiation, Floods, Lithography, Semiconducting wafers, Optical lithography, Coating, Printing

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Proceedings Article | 22 March 2008 Paper

Evaluating diffraction based overlay metrology for double patterning technologies

Chandra Saru Saravanan, Yongdong Liu, Prasad Dasari, Oleg Kritsun, Catherine Volkman, Alden Acheta, Bruno La Fontaine

Proceedings Volume 6922, 69220C (2008) https://doi.org/10.1117/12.774736

KEYWORDS: Overlay metrology, Double patterning technology, Silicon, Scatterometry, Optical lithography, Diffraction, Spectroscopy, Critical dimension metrology, Photoresist materials, Metrology

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Proceedings Article | 11 April 2007 Paper

Line-edge roughness in 193-nm resists: lithographic aspects and etch transfer

Thomas Wallow, Alden Acheta, Yuansheng Ma, Adam Pawloski, Scott Bell, Brandon Ward, Cyrus Tabery, Bruno La Fontaine, Ryoung-han Kim, Sarah McGowan, Harry Levinson

Proceedings Volume 6519, 651919 (2007) https://doi.org/10.1117/12.712319

KEYWORDS: Line edge roughness, Etching, Photoresist materials, Spatial frequencies, Lithography, Smoothing, Image processing, Critical dimension metrology, Semiconducting wafers, Photoresist processing

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Proceedings Article | 4 April 2007 Paper

Evaluating a scatterometry-based focus monitor technique for hyper-NA lithography

Chandra Saru Saravanan, Srinivasan Nirmalgandhi, Oleg Kritsun, Alden Acheta, Richard Sandberg, Bruno La Fontaine, Harry Levinson, Kevin Lensing, Mircea Dusa, Jan Hauschild, Anita Pici

Proceedings Volume 6518, 651806 (2007) https://doi.org/10.1117/12.712470

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Scanners, Scatterometry, Finite element methods, Monochromatic aberrations, Reticles, Cadmium, Fused deposition modeling, Mathematical modeling

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Proceedings Article | 26 March 2007 Paper

Evaluating the performance of a 193-nm hyper-NA immersion scanner using scatterometry

Oleg Kritsun, Bruno La Fontaine, Richard Sandberg, Alden Acheta, Harry Levinson, Kevin Lensing, Mircea Dusa, Jan Hauschild, Anita Pici, Chandra Saravanan, Kunie Primak, Rahul Korlahalli, Srinivasan Nirmalgandhi

Proceedings Volume 6520, 65200L (2007) https://doi.org/10.1117/12.715971

KEYWORDS: Semiconducting wafers, Scanners, Scatterometry, Critical dimension metrology, Metrology, Lithography, Modulation transfer functions, Cadmium, Spatial frequencies, Immersion lithography

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SPIE Journal Paper | 1 April 2006

Line edge roughness and intrinsic bias for two methacrylate polymer resist systems

Adam Pawloski, Alden Acheta, Harry Levinson, Timothy Michaelson, Andrew Jamieson, Yukio Nishimura, Carlton Willson

JM3, Vol. 5, Issue 02, 023001, (April 2006) https://doi.org/10.1117/12.10.1117/1.2200675

KEYWORDS: Line edge roughness, Polymers, Diffusion, Data modeling, Optical lithography, Image quality, Systems modeling, Photoresist materials, Chemical analysis, Scanning electron microscopy

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Proceedings Article | 29 March 2006 Paper

The transfer of photoresist LER through etch

Adam Pawloski, Alden Acheta, Scott Bell, Bruno La Fontaine, Tom Wallow, Harry Levinson

Proceedings Volume 6153, 615318 (2006) https://doi.org/10.1117/12.652206

KEYWORDS: Line edge roughness, Etching, Photoresist processing, Photoresist materials, Scanning electron microscopy, Image processing, Image quality, Nickel, Semiconducting wafers, Optical lithography

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Proceedings Article | 29 March 2006 Paper

Post-etch LER performance of novel surface conditioner solutions

P. Zhang, M. Jaramillo, S. Cassel, T. Wallow, A. Acheta, A. Pawloski, S. Bell, R. Kim

Proceedings Volume 6153, 61533Y (2006) https://doi.org/10.1117/12.656648

KEYWORDS: Line edge roughness, Etching, Semiconducting wafers, Line width roughness, Photoresist processing, Lithography, Plasma, Critical dimension metrology, Scanning electron microscopy, Plasma etching

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Proceedings Article | 24 March 2006 Paper

Characterization and applications of an in-scanner aerial image detection system

S. Hunsche, M. J. Gassner, J. A. Schefske, E. R. Kent, A. Acheta

Proceedings Volume 6152, 61522U (2006) https://doi.org/10.1117/12.656547

KEYWORDS: Sensors, Image sensors, Semiconducting wafers, Scanners, Critical dimension metrology, Data acquisition, Photomasks, CCD image sensors, Electronics, Image processing

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Proceedings Article | 12 May 2005 Paper

RELAX: resolution enhancement by laser-spectrum adjusted exposure

Ivan Lalovic, Nigel Farrar, Kazuhiro Takahashi, Eric Kent, Daniel Colon, German Rylov, Alden Acheta, Koji Toyoda, Harry Levinson

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601002

KEYWORDS: Light sources, Resolution enhancement technologies, Lithography, Image processing, Excimer lasers, Deep ultraviolet, Wavefronts, Photomasks, Lithographic illumination, Colorimetry

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Proceedings Article | 12 May 2005 Paper

Characterization, modeling, and impact of scattered light in low-k1 lithography

Bruno La Fontaine, Yunfei Deng, Mircea Dusa, Alden Acheta, Anita Fumar-Pici, Harish Bolla, Beverly Cheung, Bhanwar Singh, Harry Levinson

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601188

KEYWORDS: Modulation transfer functions, Scanners, Light scattering, Lithography, Spatial frequencies, Scatterometry, Critical dimension metrology, Computer simulations, Semiconducting wafers, Optical microscopes

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Proceedings Article | 4 May 2005 Paper

The effects of chemical gradients and photoresist composition on lithographically generated line edge roughness

Timothy Michaelson, Adam Pawloski, Alden Acheta, Yukio Nishimura, C. Grant Willson

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599848

KEYWORDS: Line edge roughness, Photoresist materials, Polymers, Diffusion, Data modeling, Semiconducting wafers, Scanning electron microscopy, Image processing, Data conversion, Mathematical modeling

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Proceedings Article | 14 May 2004 Paper

Understanding the role of base quenchers in photoresists

Timothy Michaelson, Andrew Jamieson, Adam Pawloski, Jeffrey Byers, Alden Acheta, C. Willson

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537658

KEYWORDS: Photoresist materials, Line edge roughness, Critical dimension metrology, Optical lithography, Polymers, Mathematical modeling

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Proceedings Article | 14 May 2004 Paper

Characterization of line-edge roughness in photoresist using an image fading technique

Adam Pawloski, Alden Acheta, Ivan Lalovic, Bruno La Fontaine, Harry Levinson

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.537103

KEYWORDS: Line edge roughness, Image quality, Image processing, Chemically amplified resists, Critical dimension metrology, Photoresist processing, Photoresist materials, Scanning electron microscopy, Semiconducting wafers, Optical lithography

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A technique was developed to investigate the role of aerial image contrast and image-log-slope (ILS) on the resulting magnitude of line edge roughness (LER) in resist with the goal of determining if the minimization of LER in current state-of-the-art, chemically amplified resist materials was limited by the quality of the projected aerial image or the materials and processing of the resist. The process of image fading was employed as the vehicle for controlled aerial image degradation. By reducing the quality of the aerial image through fading, the image contrast and ILS were decreased in a well-controlled and predictable manner, resulting in increased magnitude of LER. The link between experiment and simulation was made possible by the identification of the iso-fading condition, which in analogy to the iso-focal dose, results in a unique exposure dose for which the critical dimension (CD) of a resist feature does not change with increasing levels of fading. At the iso-fading condition, experimentally measured values for LER were analyzed as a function of the contrast and ILS of the aerial image used for patterning. It was determined that contrast was a poor predictor of the magnitude of LER though variations in feature type or illumination. The change in LER as a function of the ILS, however, produced a common basis for the comparison of LER through variations in line width, pitch, fading, increased background level of light, and illumination conditions. To include the effects of exposure dose on the resulting LER of resist features, the experimentally measured analog of the ILS, the resist edge-log-slope (RELS), was also used to produce a common curve for the evaluation of resist LER. Although overexposure can be used to further increase the ILS of the aerial image at the edge of the printed feature, the magnitude of 3σ LER in PAR735 resist appeared to be limited to a value of approximately 5.0nm in the limit of infinite RELS. This suggested that while the aerial image plays a strong role on determining the magnitude of LER during resist printing, there also exists a fundamental limitation to LER from the resist materials that cannot be improved by further increase in the quality of the aerial image.

Proceedings Article | 17 December 2003 Paper

Influence of antireflection coatings in ArF lithography

Bruno La Fontaine, Adam Pawloski, Alden Acheta, Yunfei Deng, Harry Levinson, Christopher Spence, Christian Chovino, Laurent Dieu, Eric Johnstone, Franklin Kalk

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518220

KEYWORDS: Reticles, Semiconducting wafers, Lithography, Modulation transfer functions, Reflectivity, Spatial frequencies, Critical dimension metrology, Chromium, Antireflective coatings, Scanners

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Proceedings Article | 26 June 2003 Paper

Study of the influence of substrate topography on the focusing performance of advanced lithography scanners

Bruno La Fontaine, Jan Hauschild, Mircea Dusa, Alden Acheta, Eric Apelgren, Marc Boonman, Jouke Krist, Ashok Khathuria, Harry Levinson, Anita Fumar-Pici, Marco Pieters

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485535

KEYWORDS: Semiconducting wafers, Scanners, Etching, Silicon, Metrology, Lithography, Thin films, Computer simulations, Overlay metrology, Polishing

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Proceedings Article | 30 July 2002 Paper

Analysis of focus errors in lithography using phase-shift monitors

Bruno La Fontaine, Mircea Dusa, Jouke Krist, Alden Acheta, Jongwook Kye, Harry Levinson, Carlo Luijten, Craig Sager, Jack Thomas, Judith van Praagh

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474581

KEYWORDS: Semiconducting wafers, Error analysis, Reticles, Lithography, Scanners, Calibration, Prototyping, Sensors, Monochromatic aberrations, Image processing

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Proceedings Article | 30 July 2002 Paper

Flare and its impact on low-k1 KrF and ArF lithography

Bruno La Fontaine, Mircea Dusa, Alden Acheta, Cinti Chen, Anatoly Bourov, Harry Levinson, Lloyd Litt, Melchior Mulder, Rolf Seltman, Judith van Praagh

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474598

KEYWORDS: Modulation transfer functions, Point spread functions, Spatial frequencies, Photomasks, Scanners, Modulation, Lithography, Light scattering, Semiconducting wafers, Critical dimension metrology

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Proceedings Article | 30 July 2002 Paper

Spherical aberration measurement and in-situ correction

Alden Acheta, Jongwook Kye, Harry Levinson

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474532

KEYWORDS: Monochromatic aberrations, Lithography, Reticles, Zernike polynomials, Wavefronts, Resolution enhancement technologies, Lenses, Semiconducting wafers, Lithographic lenses, Optical lithography

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Showing 5 of 19 publications

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