Quantum emitters in hexagonal boron nitride (hBN) crystals are optimal candidates for the observation of single photon emission, but achieving control over their features is a challenging task. In this work, we present the deterministic generation of emitters with selected position and spectral features with a method that combines ion implantation and annealing of the sample. With this method, we even achieved control over the density of emitters. Such control is a fundamental step towards the engineering of emitter ensembles that can be readily embedded in Van der Waals heterostructures and advanced quantum systems.
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