Energy-efficient spintronic devices require the following two criteria: (1) a large spin-orbit torque (SOT) and (2) low damping to excite magnetic precession with low current input. Conventional ferromagnet/nonmagnetic-metal bilayers can obtain sizeable SOTs; however, this comes at the expense of drastically increasing the damping. Because the origin or the transmission of spin is interfacial in nature, the ferromagnetic layer must be restricted to ∼1nm in thickness to see substantial SOTs. Here, we present an alternative approach to producing sizeable SOTs that allows for a thicker ferromagnetic layer maintaining low damping. Instead of relying on a single interface, we continuously break the bulk inversion symmetry with a vertical compositional gradient of two ferromagnetic elements: Fe with low intrinsic damping and Ni with sizable spin-orbit coupling. We find low effective damping parameters of αeff < 5 × 10−3 in the FeNi alloy films, despite the steep compositional gradients. Moreover, we reveal a sizable anti-damping SOT efficiency of θAD ≈ 0.05, even without an intentional compositional gradient. Through depth-resolved x-ray diffraction, we identify a lattice strain gradient as crucial symmetry breaking that underpins the SOT. Our findings provide fresh insights into damping and SOTs in single-layer ferromagnets for power-efficient spintronic devices.
Solid state magneto-ionic (MI) effects, which can be achieved through controlled ionic migration at atomic scale interfaces in magnetic nanostructures, have shown promise for energy-efficient nanoelectronics. Our recent efforts reach outside of the often-explored oxygen-based MI systems, and have focused on alternative ionic species, including nitrogen. Two nitrogen-based systems, Ta/CoFe/MnN/Ta and the all-nitride Mn4N/MnNx, show MI manipulation of magnetic properties including saturation magnetization and exchange bias. Such MI systems are valuable platforms to gain quantitative understanding at buried interfaces and they demonstrate contrasts with oxygen-based MI effects in terms of operating principles, switching speed, and reversibility.
Tuning the Dzyaloshinskii-Moriya interaction (DMI) using electric (E)-fields in magnetic devices has opened up new perspectives for controlling the stabilization of chiral spin structures. Recent efforts have used voltage-induced charge redistribution at magnetic/oxides interfaces to modulate the DMI. This approach is attractive for active devices but tends to be volatile, making it energy-demanding. Here we demonstrate nonvolatile E-field manipulation of the DMI by ionic-liquid gating of Pt/Co/HfO2 ultra thin films. The E-field effect on the DMI is linked to the migration of oxygen species from the HfO2 layer into the Co and Pt layers and subsequent anchoring. This effect permanently changes the properties of the material, showing that E-fields can be used not only for local gating in devices but also as a material design tool for post growth tuning of the DMI.
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