One of the ways to create highly sensitive gas sensors based on graphene is to modify graphene by forming nanometer-sized channels in it. In this work, ion beam etching was used for these purposes. The necessary doses of Ga+ focused ion beam (FIB) were found to etch graphene. Several different structures based on modified graphene have been manufactured and investigated. A method for manufacturing graphene structures with a width of less than 10 nm by Ga+ FIB has been found. Also, high conductivity for structures of nanogap with polyaniline (PANi) was found, which can be used as selective gas sensing structures. The paper presents the responses of structures with nano-channel of PANi between modified graphene electrodes to different concentrations of ammonia and water.
Carbon nanotube (CNT) and SiO2 etching effects was studied and was found that using different techniques of focused ion beam (FIB) exposure and using two pass etching leads to a significant difference in the etching rate of CNTs relatively of SiO2 and directly individually oxide itself. The parameters annealing of the structures to remove the effects of the charge arising from the etching of CNT on SiO2 was determined and the effect of the charge on the effects of the deposition of organic molecules from solution was studied. Different behavior of deposition of polar and non-polar polymer materials on charged regions with width less than 100 nm was found. Obtained structures was investigated by SEM, AFM methods and for structures with polyaniline deposited CVC was measured and by comparison with literature and experimental data analysis of polyaniline structuring in nano-scale gap formed with FIB was carried out.
The principle of the formation of thin and thick photoresist films on surfaces with considerable relief by the aerosol deposition using ultra low flow was investigated. It was shown that the change in the photoresist blend composition of solution is required with decreasing film thickness less than 1 micron to achieve a roughness of less than 150 nm. And the film at least 0.7 microns thickness can be formed and have the uniform film thickness as on the walls and on horizontal surfaces on the substrate with grooves obtained by etching liquid. It is shown that even with a film thickness of 10 microns vertical walls may be partially cover the of the photoresist and unfilled plasma-chemical etching grooves with vertical walls, whose width not exceeding 10 microns. To determine the uniformity of film thickness atomic force microscopy was used. And it was shown that up to 2 microns of film thickness spectroscopic methods with the analysis of the fluorescent signal intensity for positive photoresists is possible to use too.
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