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Device performance is strongly correlated with Fin geometry causing an urgent need for 3D measurements. New beam tilting capabilities enhance the ability to make 3D measurements in the front-end-of-line (FEOL) of the metal gate FinFET process in manufacturing. We explore these new capabilities for measuring Fin height and build upon the work communicated last year at SPIE1. Furthermore, we extend the application of the tilt beam to the back-end-of-line (BEOL) trench depth measurement and demonstrate its capability in production targeting replacement of the existing Atomic Force Microscope (AFM) measurements by including the height measurement in the existing CDSEM recipe to reduce fab cycle time.
In the BEOL, another increasingly challenging measurement for the traditional CD-SEM is the bottom CD of the self-aligned via (SAV) in a trench first via last (TFVL) process. Due to the extremely high aspect ratio of the structure secondary electron (SE) collection from the via bottom is significantly reduced requiring the use of backscatter electrons (BSE) to increase the relevant image quality. Even with this solution, the resulting images are difficult to measure with advanced technology nodes. We explore new methods to increase measurement robustness and combine this with novel segmentation-based measurement algorithm generated specifically for BSE images. The results will be contrasted with data from previously used methods to quantify the improvement. We also compare the results to electrical test data to evaluate and quantify the measurement performance improvements.
Lastly, according to International Technology Roadmap for Semiconductors (ITRS) from 2013, the overlay 3 sigma requirement will be 3.3 nm in 2015 and 2.9 nm in 2016. Advanced lithography requires overlay measurement in die on features resembling the device geometry. However, current optical overlay measurement is performed in the scribe line on large targets due to optical diffraction limit. In some cases, this limits the usefulness of the measurement since it does not represent the true behavior of the device. We explore using high voltage imaging to help address this urgent need. Novel CD-SEM based overlay targets that optimize the restrictions of process geometry and SEM technique were designed and spread out across the die. Measurements are done on these new targets both after photolithography and etch. Correlation is drawn between the two measurements. These results will also be compared to conventional optical overlay measurement approaches and we will discuss the possibility of using this capability in high volume manufacturing.
Traditional inline metrology methods used are time consuming and do not provide the needed wafer level metrics. In addition, measurement of remaining dielectric thickness on solid pads is not a good representative of the actual device structures and has been inaccurate for process due to dishing of the copper pads. Efficient control of BEOL processes requires measurement of metal line thickness and other critical profile parameters from which resistance can be extracted. In order to relate BEOL process steps and understand their interactions, it is necessary to have a directly comparable measurement methodology on a similar measurement structure.
Over the past several years, scatterometry has been proven as the only metrology method to provide the full profile information of the Cu lines. Scatterometry is a diffraction based optical measurement technique using Rigorous Coupled Wave Analysis (RCWA), where light diffracted from a periodic structure is used to characterize the details of profile. Unique algorithms, such as Holistic Metrology can be used to make the scatterometry development process faster.
In this paper, we will present how scatterometry can be used to measure copper line height on 3D structures and how feed forward from RIE can be applied for control of Cu CMP process for 20nm technology node. The importance of incoming trench depth variations is demonstrated for CMP polish time control in order to stabilize the copper line height. Validation data is presented for different scatterometry models including accuracy, repeatability and DoE tracking. Electrical resistance is shown to correlate to the copper trench profile measured by scatterometry. The paper will demonstrate the capability for reducing copper line height variation and the correlation of the reducing trench height variation to improved stabilization of electrical resistance.
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