GaSb-based interband cascaded lasers (ICLs) have now become a leading laser source to cover the mid-infrared (mid-IR) spectral range (3-6 µm). In the last decade, the success of the silicon photonics industry thanks to its optical properties, low cost and easy commercialization of its large wafers size. However, this requires all Sb-based optoelectronics functions on a Si platform. We will discuss about our recent results on single mode distributed feedback interband cascade lasers (ICL) directly grown on Si emitting between 3 and 4 µm.
In this talk we will review our recent demonstrations of mid-IR lasers grown on (001) Si or Ge substrates (diode lasers, interband cascade lasers, quantum cascade lasers) and compare their performance to those grown on their native substrates. We will demonstrate light coupling from lasers grown on patterned Si photonics wafers to passive SiN waveguides, with a coupling efficiency in line with simulations. Finally, we will discuss and evaluate strategies to enhance the coupling efficiency.
The successful development of mid-infrared (2-5µm) lasers monolithically integrated with Si-based photonics opens a door to realization of low-cost smart optical gas sensors for environmental monitoring and control of industrial processes. We will discuss our recent results on interband cascade lasers emitting between 3 and 4 µm grown on silicon substrates demonstrating high tolerance of these devices to threading dislocations. The high performance of the developed lasers makes them a good candidate for use as light sources in silicon photonics.
Monolithic integration of InAs/InAsSb type-II superlattice (T2SL) photodetector on large-scale Si wafers would allow the development of a low-cost, high-quality, Si-readout integrated circuit compatibility focal plane array (FPA). In this study, we compare the performances of MWIR InAs/InAsSb T2SL samples grown on Si and GaSb substrates. The material quality is investigated with High-Resolution X-ray Diffraction, Atomic Force Microscopy, and Photoluminescence (PL). A minority carrier lifetime of 800 ns at 150 K is extracted from time-resolved PL on the sample grown on GaSb/Si templates with dislocation filtering layers. The device performances will be reported at the conference.
Silicon photonics can have a major impact on the advancement of mid-IR photonics by leveraging the mature and reliable high-volume fabrication technologies already developed for microelectronic integrated circuits. Germanium, already used in silicon photonics, is a promising material for increasing the operating wavelength of Group-IV-based photonic integrated circuits beyond 8 μm and potentially up to 15 μm. High-performance InAs-based quantum cascade lasers grown on Si have been previously reported. In this work, we present InAs-based QCLs directly grown on Ge. The lasers operate near 14 μm with pulsed threshold current densities as low as 0.8 kA/cm2 at room temperature.
In this communication we will present the first semiconductor laser grown on a Si photonics platform in a butt-coupling configuration. A GaSb-based diode laser (DL) was grown on a patterned Si photonics wafer equipped with SiN waveguides. Growth and device fabrication challenges arising from the template architecture were overcome to demonstrate several mW outpower of emitted light in continuous wave operation at room temperature. In addition, around 10% of light was coupled into the SiN waveguides, in good agreement with theoretical calculations. This work paves the way to future on-chip sensors.
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