In the current study, we report the all-inorganic lead-free halide perovskites-oxide heterojunction based optoelectronic device fabrications on Si substrate by employing cost-effective chemical bath deposition (CBD) and hot-injection techniques. The selective rare-earth doping of erbium (Er) in ZnO nanowires is performed by employing double-step CBD technique on Si platform for developing a superior heterojunction between Er:ZnO and Si. Furthermore, lead-free perovskites NCs of CsSnCl3 are synthesized by using cost-effective hot-injection method and such NCs are decorated over the Er:ZnO nanowires to passivate the surface defect states. The effect of Er-doping and CsSnCl3 incorporation on structural, optical and luminescence properties of nanowire heterojunctions has been successfully investigated by employing XRD, UV-VIS and PL. The crystal structure of Er:ZnO and Er: ZnO-CsSnCl3 heterojunctions has been analyzed using X-Ray Diffraction (XRD) technique, which confirms the polycrystalline nature of nanowires with the formation of a highly crystalline cubic phase of CsSnCl3. The optical absorption of Er:ZnO nanowires and CsSnCl3 NCs are studied by using ultraviolet-visible (UV-VIS) spectroscopy and corresponding energy bandgaps are estimated to be 3.31 eV and 3.24 eV, respectively. The oxygen vacancies and complex defect states are minimized in ZnO nanowires by Er-doping and perovskites NCs addition and such CsSnCl3 decorated Er:ZnO nanowires exhibit enhanced UV luminescence as compared to undoped ZnO. Finally, photoresponse of undoped, Er-doped and CsSnCl3 incorporated ZnO nanowires/Si heterojunction has been studied by measuring dark and photo-current and photo-current switching at UV-A wavelength region and such heterojunctions shows excellent photoresponse under self-powered mode. Therefore, such perovskites incorporated Er:ZnO nanowires/Si heterojunction can be a potential candidate for fabricating a highly responsive self-powered UV-detector (UV-A).
The formation of reproducible p-type conductivity in ZnO thin films is highly challenging now a days for the fabrication of several homo/heterojunction based fully transparent opto-electronic devices. In this study, p-type P: ZnO thin films are deposited by cost-effective SOD process and then intrinsically n-type Ga2O3 films are deposited on it to validate the p-type conductivity of ZnO by making vertical heterojunction with n-Ga2O3. The ZnO thin films are deposited by RF sputtering and subsequent P-doping is done by using the SOD technique on it. This involves proximity diffusing dopants into a spin-coated film by stacking the dopant source during thermal annealing at 800◦C for four hours in the furnace. Ga2O3 films are deposited on the P: ZnO films by using RF sputtering technique, for making the heterojunction. The electrical measurements are performed by using current-voltage (I-V) measurements under illuminated and dark conditions. The photo-switching and responsivity are also measured on the fabricated device. It is observed that the P: ZnO/Ga2O3 heterojunction exhibits the photoresponse in the dual wavelength region. The corresponding two peaks of responsivity are found around 200 nm and 390 nm with the values of 68.03 A/W and 7.93 A/W (at 5 V), respectively. Such two peaks originated due to the ultra-wide bandgaps of Ga2O3 (4.7eV) and P: ZnO (3.1 eV). Also, such heterojunction shows a rapid switching speed under white light at 5 V (rise time: 230 ms, fall time: 163 ms) and −5 V (rise time: 83 ms, Fall time: 169 ms), which is comparable with the other reported results. Therefore, the current study demonstrates the development of highly stable and reproducible p-type P: ZnO thin films by employing SOD technique and the validation of p-type formation by fabricating P: ZnO/Ga2O3 heterojunctions for dual-wavelength selector UV detector application and such detectors can be a potential candidate for various optoelectronic devices.
Vitamin D3 acts as a crucial biomarker for various diseases. Current methods for vitamin D3 detection are time-consuming, expensive, and require trained personnel. We report a simple and cheap photodetector (PD)-based vitamin D3 detection technique for the first time using Ag nanoparticles-covered Er-doped TiO2 nanowires. The operational stability of the device was tested under the dark as well as the UV light illumination. Vitamin D3 solution produced absorption bands at 222 and 280 nm, respectively. The PD current density varied from 1.29 × 10 − 4 A / cm2 to 1.74 × 10 − 4 at −4 V for pure ethanol solution and 20 pg / ml D3 solution, respectively (under 220 nm illumination). The average absolute current values were reduced from 3.25 nA (220 nm) and 2.9 nA (340 nm) for 5 pg / ml to 2.95 nA (220 nm) and 2.54 nA (340 nm) for 30 pg / ml D3 solution, respectively. The current gradually increased up to 3.34 nA (220 nm) and 2.7 nA (340 nm) as the concentration was increased up to 80 pg / ml. The PD current/vitamin D3 concentration decreases exponentially from 0.58 to 0.03 nA / g / ml) for 5 and 80 pg / ml, respectively, under 220 nm excitation, from which an unknown concentration of vitamin D3 can be obtained.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.