CONFERENCE PROCEEDINGS
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Benjamin Z. Wu
at Honeywell Electronic Materials
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Author
Publications (5)
Proceedings Article | 18 March 2010 Paper
Characterization of line-edge roughness (LER) propagation from resists: underlayer interfaces in ultrathin resist films
Simi George, Patrick Naulleau, Ahila Krishnamoorthy, Zeyu Wu, Edward Rutter, Joseph Kennedy, Song Yuan Xie, Kyle Flanigan, Thomas Wallow
Proceedings Volume 7636, 763605 (2010) https://doi.org/10.1117/12.848405
KEYWORDS: Line edge roughness, Interfaces, Thin films, Photoresist materials, Extreme ultraviolet lithography, Extreme ultraviolet, 3D image processing, Photoresist processing, Head-mounted displays, Liquids
Proceedings Article | 11 December 2009 Paper
High Si content anti-reflective coatings and their extension to a UV freeze dual patterning process
Proceedings Volume 7520, 75200O (2009) https://doi.org/10.1117/12.837205
KEYWORDS: Ultraviolet radiation, Photoresist materials, Optical lithography, Semiconducting wafers, Silicon, Double patterning technology, Optical properties, Lithography, Photoresist developing, Chemistry
Proceedings Article | 1 April 2009 Paper
Performance of an ArF siloxane BARC exposed to a 172-nm UV cure for double patterning applications
Ze-Yu Wu, Joseph Kennedy, Song-Yuan Xie, Ron Katsanes, Kyle Flanigan, Junyan Dai, Nikolaos Bekiaris, Hiram Cervera, Glen Mori, Thomas Wallow
Proceedings Volume 7273, 72731I (2009) https://doi.org/10.1117/12.814416
KEYWORDS: Ultraviolet radiation, Photoresist materials, Optical lithography, Semiconducting wafers, Double patterning technology, Silicon, Optical properties, FT-IR spectroscopy, Lithography, Time division multiplexing
Proceedings Article | 4 December 2008 Paper
High Si content BARC for applications in dual BARC systems such as tri-layer patterning
Joseph Kennedy, Song-Yuan Xie, Ze-Yu Wu, Ron Katsanes, Kyle Flanigan, Kevin Lee, Mark Slezak, Nicolette Fender, Junichi Takahashi
Proceedings Volume 7140, 71402S (2008) https://doi.org/10.1117/12.804699
KEYWORDS: Etching, Plasma etching, Photoresist materials, Optical lithography, Plasma, Silicon, Lithography, Optical properties, Polymers, Scanning electron microscopy
Proceedings Article | 4 April 2008 Paper
A high-Si content middle layer for ArF trilayer patterning
Proceedings Volume 6923, 69230W (2008) https://doi.org/10.1117/12.772854
KEYWORDS: Etching, Optical lithography, Plasma etching, Photoresist materials, Silicon, Plasma, Reflectivity, Chemistry, Photoresist processing, Wet etching
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