Excited charge transfer complexes (Exciplex) formed between donor and acceptor materials are frequently encountered in organic photonic devices such as in organic light emitting diodes and organic photovoltaics. Formation of exciplexes can be easily identified by the observation of the red shifted emission from those of the component molecules. Generally the PL efficiency of the exciplexes is low so that OLEDs are designed not to form exciplexes at the organic/organic junctions. Formation of exciplexes at the D/A junction is also to be avoided in OPVs since it reduces the dissociation probability of geminate electron-hole pairs formed at the interface. In this presentation we will firstly discuss on the nature of exciplex including the electronic structure, emission processes and diffusion. Further discussion will be given to the application of exciplex forming systems as the triplet harvesting fluorescent molecular system and as the co-host for phosphorescent and fluorescent dopants for ultimate efficiency in OLEDs.
Emitting dipole orientation (EDO) is an important issue of emitting materials in organic light-emitting diodes for an increase of outcoupling efficiency of light. The origin of preferred orientation of emitting dipole of iridium-based heteroleptic phosphorescent dyes doped in organic layers is revealed by simulation of vacuum deposition using molecular dynamics along with quantum mechanical characterization of the phosphors. Consideration of both the electronic transitions in a molecular frame and the orientation of the molecules at the vacuum/molecular film interface allows quantitative analyses of the EDO depending on host molecules and dopant structures. Interactions between the phosphor and nearest host molecules on the surface, minimizing the non-bonded van der Waals and electrostatic interaction energies determines the molecular alignment during the vacuum deposition. Parallel alignment of the main cyclometalating ligands in the molecular complex due to host interactions rather than the ancillary ligand orienting to vacuumleads to the horizontal EDO.
High efficiency OLEDs based on phosphorescent, thermally activated delayed fluorescent (TADF) and fluorescent emitters will be presented. We will show that EQEs over 60% is achievable if OLEDs are fabricated using organic semiconductors with the refractive indices of 1.5 and fully horizontal emitting dipoles without any extra light extracting structure. We will also show that reverse intersystem crossing RISC rate plays an important role to reduce the efficiency roll-off in efficient TADF and fluorescent OLEDs and a couple to methods will be presented to increase the RISC rate in the devices.
In this study, we demonstrate a blue OLED with the EQE of 34% and power efficiency of 79.6 lm W-1 using low refractive index electron transporting layer which are the highest efficiencies ever reported in blue OLEDs. In addition, we quantitatively calculated maximum achievable outcoupling efficiencies according to change of refractive indices, which can be used to estimate the achievable outcoupling efficiency of OLEDs without fabrication. The simulation indicates that EQE over 60% can be achievable in PhOLEDs if refractive indices of consisting organic materials’ are close to 1.5.
Electrical doping is an important method in organic electronics to enhance device efficiency by controlling Fermi level, increasing conductivity, and reducing injection barrier from electrode. To understand the charge generation process of dopant in doped organic semiconductors, it is important to analyze the charge transfer complex (CTC) formation and dissociation into free charge carrier. In this paper, we correlate charge generation efficiency with the CTC formation and dissociation efficiency of n-dopant in organic semiconductors (OSs). The CTC formation efficiency of Rb2CO3 linearly decreases from 82.8% to 47.0% as the doping concentration increases from 2.5 mol% to 20 mol%. The CTC formation efficiency and its linear decrease with doping concentration are analytically correlated with the concentration-dependent size and number of dopant agglomerates by introducing the degree of reduced CTC formation. Lastly, the behavior of dissociation efficiency is discussed based on the picture of the statistical semiconductor theory and the frontier orbital hybridization model.
We present the factors influencing the orientation of the phosphorescent dyes in phosphorescent OLEDs. And, we report that an OLED containing a phosphorescent emitter with horizontally oriented dipoles in an exciplex-forming co-host that exhibits an extremely high EQE of 32.3% and power efficiency of 142 lm/W, the highest values ever reported in literature. Furthermore, we experimentally and theoretically correlated the EQE of OLEDs to the PL quantum yield and the horizontal dipole ratio of phosphorescent dyes using three different dyes.
We report extremely high light out-coupling efficiency from a transparent organic light-emitting diode (OLED) integrated with microstructures on both sides of the device.[1] The OLED having a metal free structure offers dramatically reduced surface plasmonic loss and absorption loss. To extract the confined light inside the device, a high refractive index light extraction pattern was directly fabricated on the top side transparent conducting oxide electrode using a simple evaporation method, and a micro lens array sheet was simultaneously attached on the bottom side of the glass substrate. As a result, the external quantum efficiency of the device increased from 18.2% to 47.3% by using the microstructures, and was additionally enhanced to 62.9% by attaching an index-matched hemisphere lens instead of the micro lens array on the glass side in order to reduce additional light guiding loss inside of the device. These values showed very good agreement with the simulation performed by a combination of the dipole model and a 3-dimensional geometrical simulation.
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