Mr. Chen-Yu Shieh Profile

Chen-Yu Shieh

at National Central Univ

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Author

Publications (5)

SPIE Journal Paper | 7 July 2014 Open Access

High performance 380-nm ultraviolet light-emitting-diodes with 3% efficiency droop by using free-standing GaN substrate manufacturing from GaAs substrate

Chen-Yu Shieh, Ming-Ta Tsai, Zhen-Yu Li, Hao-Chung Kuo, Jenq-Yang Chang, Gou-Chung Chi, Wei-I Lee

JNP, Vol. 8, Issue 01, 083081, (July 2014) https://doi.org/10.1117/12.10.1117/1.JNP.8.083081

KEYWORDS: Sapphire, Gallium nitride, Transmission electron microscopy, Ultraviolet radiation, Raman spectroscopy, Crystals, Satellites, Gallium arsenide, Interfaces, Manufacturing

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Proceedings Article | 8 March 2014 Paper

Characterization of 380nm UV-LEDs grown on free-standing GaN by atmospheric-pressure metal-organic chemical vapor deposition

C. Shieh, Z. Li, H. Kuo, J. Chang, G. Chi

Proceedings Volume 8986, 898629 (2014) https://doi.org/10.1117/12.2039621

KEYWORDS: Ultraviolet light emitting diodes, Gallium nitride, Sapphire, Indium, Transmission electron microscopy, Internal quantum efficiency, External quantum efficiency, Chemical vapor deposition, Electroluminescence, Light emitting diodes

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Proceedings Article | 27 March 2013 Paper

Structural and optical characterizations of GaN-based green light-emitting diodes growth using TiN buffer layer

C. Shieh, Z. Li, H. Kuo, G. Chi

Proceedings Volume 8625, 862529 (2013) https://doi.org/10.1117/12.2004465

KEYWORDS: Green light emitting diodes, Tin, Gallium nitride, Electroluminescence, Sapphire, Quantum wells, Electron microscopes, Luminescence, Light emitting diodes, Epitaxial lateral overgrowth

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Proceedings Article | 27 March 2013 Paper

Influence of free-standing GaN substrate on ultraviolet light-emitting-diodes by atmospheric-pressure metal-organic chemical vapor deposition

C. Shieh, Z. Li, C. Chiu, P. Tu, H. Kuo, G. Chi

Proceedings Volume 8625, 862525 (2013) https://doi.org/10.1117/12.2003673

KEYWORDS: Gallium nitride, Ultraviolet light emitting diodes, Sapphire, Raman spectroscopy, Indium, Light emitting diodes, Ultraviolet radiation, Chemical vapor deposition, Excitons, Temperature metrology

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Proceedings Article | 26 May 2011 Paper

Characteristics of CO sensors made by polar and nonpolar ZnO nanowires gated AlGaN/GaN high electron mobility transistor

S. C. Hung, C. W. Chen, C. Y. Shieh, G. C. Chi, F. Ren, S. J. Pearton

Proceedings Volume 8024, 80240P (2011) https://doi.org/10.1117/12.883015

KEYWORDS: Zinc oxide, Carbon monoxide, Field effect transistors, Sensors, Transistors, Chemical vapor deposition, Oxygen, Gallium nitride, Crystals, Nanowires

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