A photoconductive switch with 4H-SiC as the substrate material and the same-side electrode structure is developed. The test results show that when using a hundred picosecond laser pulse as the trigger source, the device can achieve an ultra-short electrical pulse response of hundred picoseconds, that is, it can output Gigahertz-level wide-spectrum signal. Through the experimental circuit built, under the condition of certain bias voltage and light pulse width, the pulse width of the electrical signal is tested when the energy of the light pulse changes within the range of 0.3-4.4 mJ. The experimental results show that the stronger the energy of the irradiated light pulse, the wider the pulse width of the response electrical signal of this switch.
A coplanar photoconductive switch based on vanadium-nitrogen doped 4H-SiC bulk material was developed. The test results show that the combination of vanadium doping and coplanar electrode structure, the voltage capability of 4H-SiC photoconductive switch is significantly improved and the conductive resistance of 4H-SiC photoconductive switch under low light intensity is reduced. The bias voltage of 4H-SiC photoconductive switch is 10kV. The conductive resistance of 4H-SiC photoconductive switch excited by 0.5mJ 532nm laser is 21Ω. In the conjugate matching link, the ouput peak power on the load is 0.3MW. The conductive resistance of 4H-SiC photoconductive switch excited by 2.5mJ 532nm laser is less 1Ω. In the conjugate matching link, the ouput peak power on the load is 6.25MW. The results show that the developed vanadium-nitrogen doped 4H-SiC photoconductive switch has the characteristics of stable output waveform, small jitter and high power. Low conductive resistance can be obtained at low light intensify. The developed vanadium-nitrogen doped 4H-SiC photoconductive switch has certain application value.
A complementary coplanar interdigital electrode photoconductive switch based on vanadium-nitrogen doped 4H-SiC bulk material was developed. The test results show that the combination of vanadium doping and coplanar interdigital electrode structure, the voltage capability of 4H-SiC photoconductive switch is significantly improved and the conductive resistance of 4H-SiC photoconductive switch under low light intensity is reduced. The bias voltage of 4H-SiC photoconductive switch is 10kV. The conductive resistance of 4H-SiC photoconductive switch excited by 0.4mJ 532nm laser is 50Ω. In a 50 Ω microwave system, the peak power output by the load is 0.5MW. By continuously increasing the injected laser energy to 2mj, the on resistance can be reduced to 6 Ω. The results show that the developed vanadium-nitrogen doped 4H-SiC photoconductive switch has the characteristics of stable output waveform, small jitter and high power. The developed vanadium-nitrogen doped 4H-SiC photoconductive switch has certain application value.
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