Photonic Integrated Circuits (PICs) play a crucial role in shaping the future of quantum technology, communications, and sensor applications. With a transparency window ranging from ultraviolet to visible to mid-infrared light and a high bandgap of 6.2 eV, aluminium nitride (AlN) is ideal for a wide range of optical applications.
Within the upcoming PIC platform, we have designed, fabricated, and examined various ring resonators, comprised of coupling structures, waveguides and ring resonators, tailored for the optical L-band (1565 nm – 1625 nm). The arrangement of the coupling structures for incoupling the light from a laser source and outcoupling of the light to a detector allows for automatic probing and mapping of various structure modifications. With grating couplers integrated on the chip, these optical structures can be linked to a tunable laser source and a detector via optical fibers.
We compare the fabrication results of the optical nanostructures for the AlN-based devices with previous results from Si3N4-based structures. To ensure the ideal structure dimensions and to minimize deviations from the simulated design values, the AlN dry etch process has been investigated and improved.
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