Silicon carbide (SiC)-based wide-bandgap semiconductor devices such as metal-oxide-semiconductor field-effect transistors (MOSFETs) generate large amounts of heat because of their small size and increasingly high-power density. The junction temperature is the most important index for evaluation of the reliability of these devices. This article proposes a method to study the changes in the forward voltage across the drain (D)-source (S) junction (VDS) under various test conditions from the perspectives of temperature sensitivity, stability, repeatability, and anti-interference properties, with the aim of determining suitable temperature test conditions for SiC MOSFET chips to achieve precise device temperature measurements. The accuracy of the proposed measurement method is verified via comparison with an infrared thermal imaging method and an electrical method. The results obtained show that the error in the SiC MOSFET junction temperature (Tj) measurements when compared with the infrared method and the electrical method is around 1%.
For the problem of reliability in the long-term use of integrated circuit chips, this article aims to work reliably for eight years, that is, after eight years of work, all devices can work normally, and a specific assessment plan for the life test is proposed. In this paper, a physical unclonable function chip is taken as an example, and related life-span experiments are carried out for the reliability target, and a method of life evaluation of a physical unclonable function chip is proposed. This method of evaluating life can also be used for other integrated circuit chips or components.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.