The rapid of development of the Internet of Things (Iot), 5G communications, and smart technologies placing higher demands on storage-integrated hardware devices. The discovery of HfO2-based ferroelectric materials has opened up a new avenue for achieving low-power logic and high-density non-volatile memory by utilizing this silicon-tolerant ferroelectric material. In this work, a 10 nm Hf0.5Zr0.5O2 (HZO) ferroelectric films ware prepared on SrTiO3 (STO) substrate using an atomic layer deposition system (ALD). After rapid annealing treatment, the surface roughness of HZO films showed nanometer level (Ra~1.033 nm, Rq~1.321 nm). HZO ferroelectric films with molybdenum (Mo) electrodes exhibit low coercive field (Ec~1.48 MV/cm) and excellent ferroelectric property (2Pr~56.143 µC/cm2 , and 2Pmax~ 81.070 µC/cm2). Under the fatigue signal of 100 kHz, the device exhibits stable anti-fatigue characteristics. Mo/HZO/Mo/STO devices exhibit fast response time (1ms) and stable polarization retention characteristics (over 103 s). This work introduces a novel method for the next-generation non-volatile memory solutions (NVM).
In this work, an analytical current-voltage (I-V) model of chalcogenide-based devices has been proposed by solving the thermally assisted hopping conduction and energy transfer equations. The subthreshold current and threshold voltage could be predicted by this model. Next, the well-known and experimental linear relationship between threshold voltage and thickness of chalcogenide glass has been deduced from the analytical model directly and the underlying physics of threshold switching is also elaborated according to the model. Besides, the constant-power condition of threshold switching point is also derived from the proposed model. The calculated results from the analytical model agree well with the numerical calculation. The proposed model can help in the design optimization and simulation of nanoscale phase-change memories, relaxation oscillations, and steep slope transistors based on chalcogenide glass materials.
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