Dr. Daniel Schmidt Profile

Dr. Daniel Schmidt

at IBM Research

SPIE Involvement:

Conference Program Committee | Author

Publications (23)

Proceedings Article | 16 April 2024 Presentation + Paper

Large feature wafer level in-line optical metrology techniques for advanced packaging schemes

Katherine Sieg, Christopher Bottoms, Christopher Waskiewicz, Alejandro Matos Mejia, Junwon Han, Shahid Butt, Daniel Schmidt, Stefan Schoeche, Alexander Hamer, Alex Hubbard

Proceedings Volume 12955, 129551P (2024) https://doi.org/10.1117/12.3012149

KEYWORDS: Semiconducting wafers, Interferometry, Wafer bonding, Metrology

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Proceedings Article | 10 April 2024 Presentation + Paper

Spectral interferometry for TSV metrology in chiplet technology

Stefan Schoeche, Daniel Schmidt, Junwon Han, Shahid Butt, Katherine Sieg, Marjorie Cheng, Aron Cepler, Shaked Dror, Jacob Ofek, Ilya Osherov, Igor Turovets

Proceedings Volume 12955, 129551O (2024) https://doi.org/10.1117/12.3011748

KEYWORDS: Semiconducting wafers, Wafer level optics, Metrology, Silicon, Reactive ion etching, Reflection, Interferometry, Dielectrics, Polarization, Semiconductor manufacturing

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Proceedings Article | 10 April 2024 Presentation + Paper

From lab to fab: in-line SIMS for process control in semiconductor manufacturing

Stefan Schoeche, Katherine Sieg, Daniel Schmidt, Mohsen Nasseri, Shogo Mochizuki, Marinus Hopstaken, Yaguang Zhu, Li Xiang, Julia Hoffman, Daniel Lewellyn, Paul Isbester, Sarah Okada

Proceedings Volume 12955, 1295508 (2024) https://doi.org/10.1117/12.3011666

KEYWORDS: Semiconducting wafers, Silicon, Epitaxy, Germanium, Nanosheets, Metrology, Annealing, Diffusion, Transistors

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Proceedings Article | 10 April 2024 Presentation + Paper

Novel ellipsometry metrology-based machine learning technique for low sensitivity characterization of critical dimensions within gate-all-around transistors

Houssam Chouaib, Valeria Dimastrodonato, Anderson Chou, Agostino Cangianoa, Andrew Cross, Derrick Shaughnessy, Zhengquan Tan, Daniel Schmidt, Curtis Durfee, Shanti Pancharatnam, Julien Frougier, Andrew Greene, Mary Breton

Proceedings Volume 12955, 129550L (2024) https://doi.org/10.1117/12.3010790

KEYWORDS: Semiconducting wafers, Education and training, Transmission electron microscopy, Nanosheets, Gallium arsenide, Data modeling, Ellipsometry, Metrology, Diffractive optical elements, Mathematical optimization

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Proceedings Article | 28 April 2023 Presentation + Paper

Impact of high-NA half-field to full-field overlay performance by Monte Carlo simulations

Romain Lallement, Daniel Schmidt, Richard Johnson, Jack Wong, Christopher Carr, Martin Burkhardt, Jaime Morillo, Allen Gabor

Proceedings Volume 12494, 124940S (2023) https://doi.org/10.1117/12.2661339

KEYWORDS: Monte Carlo methods, Extreme ultraviolet lithography, Scanners, Deep ultraviolet, Design and modelling, Semiconducting wafers, Overlay metrology, Photomasks, Extreme ultraviolet, Error analysis

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Proceedings Article | 27 April 2023 Presentation + Paper

TSV stress evolution mapping using in-line Raman spectroscopy

Stefan Schoeche, Daniel Schmidt, Marjorie Cheng, Aron Cepler, Abraham Arceo de la Pena, Jennifer Oakley

Proceedings Volume 12496, 124960D (2023) https://doi.org/10.1117/12.2658458

KEYWORDS: Annealing, Raman spectroscopy, Semiconducting wafers, Silicon, Metals, Copper, Oxides, Chemical mechanical planarization, Reactive ion etching, Phonons

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SPIE Journal Paper | 21 February 2023 Open Access

Spectral interferometry for fully integrated device metrology

Daniel Schmidt, Manasa Medikonda, Michael Rizzolo, Claire Silvestre, Julien Frougier, Andrew Greene, Mary Breton, Aron Cepler, Jacob Ofek, Itzik Kaplan, Roy Koret, Igor Turovets

JM3, Vol. 22, Issue 03, 031203, (February 2023) https://doi.org/10.1117/12.10.1117/1.JMM.22.3.031203

KEYWORDS: Metrology, Interferometry, Data modeling, Tunable filters, Semiconducting wafers, Scatterometry, Optical filters, Machine learning, Education and training, Dielectrics

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Proceedings Article | 13 June 2022 Presentation

OVL performance of HighNA stitched fields using Monte Carlo simulations

Romain Lallement, Jaime Morillo, Daniel Schmidt, Rick Johnson, Cody Murray, Martin Burkhardt, Allen Gabor

Proceedings Volume PC12051, PC120510R (2022) https://doi.org/10.1117/12.2614278

KEYWORDS: Monte Carlo methods, Scanners, Extreme ultraviolet lithography, Overlay metrology, Semiconducting wafers, Photomasks, Optical lithography, Manufacturing, Lithography, Extreme ultraviolet

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Proceedings Article | 8 June 2022 Presentation + Paper

Scatterometry-based methodologies for characterization of MRAM technology

M. Medikonda, D. Schmidt, M. Rizzolo, M. Breton, A. Dutta, H. Wu, E. Evarts, A. Cepler, R. Koret, I. Turovets, D. Edelstein

Proceedings Volume PC12053, PC120530J (2022) https://doi.org/10.1117/12.2614137

KEYWORDS: Metrology, Resistance, Critical dimension metrology, Chemical mechanical planarization, Logic, Data modeling, Instrument modeling, Scatterometry, Semiconducting wafers, Machine learning

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Proceedings Article | 26 May 2022 Presentation + Paper

Vertical travelling scatterometry for metrology on fully integrated devices

D. Schmidt, M. Medikonda, M. Rizzolo, C. Silvestre, J. Frougier, A. Greene, M. Breton, A. Cepler, J. Ofek, I. Kaplan, R. Koret, I. Turovets

Proceedings Volume 12053, 120530S (2022) https://doi.org/10.1117/12.2614077

KEYWORDS: Metrology, Semiconducting wafers, Scatterometry, Optical filters, Dielectrics, Data modeling, Back end of line, Front end of line, Chemical mechanical planarization, Transmission electron microscopy

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SPIE Journal Paper | 18 April 2022 Open Access

Review of nanosheet metrology opportunities for technology readiness

Mary Breton, Daniel Schmidt, Andrew Greene, Julien Frougier, Nelson Felix

JM3, Vol. 21, Issue 02, 021206, (April 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.2.021206

KEYWORDS: Metrology, Scatterometry, Optical lithography, Machine learning, Silicon, Atomic force microscopy, Nanowires, Germanium, Line edge roughness, Scanning electron microscopy

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SPIE Journal Paper | 27 January 2022 Open Access

In-line Raman spectroscopy for gate-all-around nanosheet device manufacturing

Daniel Schmidt, Curtis Durfee, Juntao Li, Nicolas Loubet, Aron Cepler, Lior Neeman, Noga Meir, Jacob Ofek, Yonatan Oren, Daniel Fishman

JM3, Vol. 21, Issue 02, 021203, (January 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.2.021203

KEYWORDS: Silicon, Germanium, Raman spectroscopy, Optical lithography, Manufacturing, Semiconducting wafers, Polarization, Metrology, Raman scattering, Phonons

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Proceedings Article | 9 March 2021 Presentation + Paper

Effect of high NA “half-field” printing on overlay error

Allen Gabor, Martin Burkhardt, Romain Lallement, Jaime Morillo, Chris Robinson, Daniel Schmidt

Proceedings Volume 11609, 1160907 (2021) https://doi.org/10.1117/12.2581823

KEYWORDS: Printing

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Proceedings Article | 5 March 2021 Presentation + Paper

OCD enhanced: implementation and validation of spectral interferometry for nanosheet inner spacer indentation

D. Schmidt, C. Durfee, S. Pancharatnam, M. Medikonda, A. Greene, J. Frougier, A. Cepler, G. Belkin, D. Shafir, R. Koret, R. Shtainman, I. Turovets, S. Wolfling

Proceedings Volume 11611, 116111U (2021) https://doi.org/10.1117/12.2582364

KEYWORDS: Interferometry, Silicon, Metrology, Scatterometry, Reflectometry, Transmission electron microscopy, Semiconductor manufacturing, Reflectivity, Polarization control

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Proceedings Article | 25 February 2021 Presentation + Paper

In-line Raman spectroscopy for stacked nanosheet device manufacturing

D. Schmidt, C. Durfee, J. Li, N. Loubet, A. Cepler, L. Neeman, N. Meir, J. Ofek, Y. Oren, D. Fishman

Proceedings Volume 11611, 116111T (2021) https://doi.org/10.1117/12.2582181

KEYWORDS: Raman spectroscopy, Manufacturing, Metrology, Optical lithography, X-ray diffraction, Silicon, Nondestructive evaluation, Germanium, Diffraction, Transistors

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Proceedings Article | 22 February 2021 Presentation

Nanosheet metrology opportunities for technology readiness

Mary Breton, Daniel Schmidt, Andrew Greene, Julien Frougier, Curtis Durfee, Indira Seshadri, Jennifer Church, Veeraraghavan Basker, Nelson Felix

Proceedings Volume 11611, 116111R (2021) https://doi.org/10.1117/12.2583636

KEYWORDS: Metrology, Line edge roughness, Gallium arsenide, Transistors, Semiconductors, Nondestructive evaluation, Nanotechnology, Manufacturing, Machine learning, Logic

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Proceedings Article | 4 May 2020 Presentation + Paper

Measuring local CD uniformity in EUV vias with scatterometry and machine learning

Dexin Kong, Daniel Schmidt, Jennifer Church, Chi-Chun Liu, Mary Breton, Cody Murray, Eric Miller, Luciana Meli, John Sporre, Nelson Felix, Ishtiaq Ahsan, Aron Cepler, Marjorie Cheng, Roy Koret, Igor Turovets

Proceedings Volume 11325, 113251I (2020) https://doi.org/10.1117/12.2551498

KEYWORDS: Scatterometry, Machine learning, Semiconducting wafers, Critical dimension metrology, Etching, Photoresist materials, Lithography, Metrology, Scatter measurement, Data modeling

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Proceedings Article | 2 April 2020 Presentation + Paper

AFM characterization for Gate-All-Around (GAA) devices

Mary Breton, Jennifer Fullam, Dexin Kong, Daniel Schmidt, Andrew Greene, Julien Frougier, Sean Hand, Jason Osborne, Weijie Wang, David Fey

Proceedings Volume 11325, 1132514 (2020) https://doi.org/10.1117/12.2551931

KEYWORDS: Atomic force microscopy, Metrology, Transmission electron microscopy, Gallium arsenide, 3D metrology, Measurement devices, Scanning electron microscopy, Semiconducting wafers, Visualization, X-ray optics

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Proceedings Article | 20 March 2020 Presentation + Paper

Line top loss and line top roughness characterizations of EUV resists

D. Schmidt, K. Petrillo, M. Breton, J. Fullam, S. Hand, J. Osborne, W. Wang, D. Fey

Proceedings Volume 11325, 113250T (2020) https://doi.org/10.1117/12.2551623

KEYWORDS: Line edge roughness, Metrology, Atomic force microscopy, Extreme ultraviolet, Semiconducting wafers, Scatterometry, Critical dimension metrology, Stochastic processes, Calibration, Scanning electron microscopy

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Proceedings Article | 3 October 2019 Paper

Characterization of EUV image fading induced by overlay corrections using pattern shift response metrology

Daniel Schmidt, Roger Cornell, Michael Kling, Allen Gabor, Christopher Ausschnitt

Proceedings Volume 11147, 1114713 (2019) https://doi.org/10.1117/12.2536690

KEYWORDS: Metrology, Semiconducting wafers, Overlay metrology, Reticles, Extreme ultraviolet, Pellicles, Extreme ultraviolet lithography, Scanners, Image processing

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Proceedings Article | 5 September 2018 Presentation + Paper

In-line characterization of non-selective SiGe nodule defects with scatterometry enabled by machine learning

Dexin Kong, Robin Chao, Mary Breton, Chi-chun Liu, Gangadhara Raja Muthinti, Soon-cheon Seo, Nicolas Loubet, Pietro Montanini, John Gaudiello, Veeraraghavan Basker, Aron Cepler, Susan Ng-Emans, Matthew Sendelbach, Itzik Kaplan, Gilad Barak, Daniel Schmidt, Julien Frougier

Proceedings Volume 10585, 1058510 (2018) https://doi.org/10.1117/12.2297377

KEYWORDS: Scatterometry, Semiconducting wafers, Scanning electron microscopy, Machine learning, Metrology, Data modeling, Scatter measurement, Mathematical modeling, Transmission electron microscopy, Field effect transistors

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As device scaling continues, controlling defect densities on the wafer becomes essential for high volume manufacturing (HVM). One type of defect, the non-selective SiGe nodule, becomes more difficult to control during SiGe epitaxy (EPI) growth for p-type field effect transistor (pFET) source and drain. The process window for SiGe EPI growth with low nodule density becomes extremely tight due to the shrinking of contact poly pitch (CPP). Any tiny process shift or incoming structure shift could introduce a high density of nodules, which could affect device performance and yield. The current defect inspection method has a low throughput, so a fast and quantitative characterization technique is preferred for measuring and monitoring this type of defect. Scatterometry is a fast and non-destructive in-line metrology technique. In this work, novel methods were developed to accurately and comprehensively measure the SiGe nodules with scatterometry information. Top-down critical dimension scanning electron microscopy (CD-SEM) images were collected and analyzed on the same location as scatterometry measurement for calibration. Machine learning (ML) algorithms are used to analyze the correlation between the raw spectra and defect density and area fraction. The analysis showed that the defect density and area fractions can be measured separately by correlating intensity variations. In addition to the defect density and area fraction, we also investigate a novel method – model-based scatterometry hybridized with machine learning capabilities – to quantify the average height of the defects along the sidewall of the gate. Hybridizing the machine learning method with the model-based one could also eliminate the possibility of misinterpreting the defect as some structural parameters. Furthermore, cross-sectional TEM and SEM measurement are used to calibrate the model-based scatterometry results. In this work, the correlation between the SiGe nodule defects and the structural parameters of the device is also studied. The preliminary result shows that there is strong correlation between the defect density and spacer thickness. Correlations between the defect density and the structural parameters provides useful information for process engineers to optimize the EPI growth process. With the advances in the scatterometry-based defect measurement metrology, we demonstrate such fast, quantitative, and comprehensive measurement of SiGe nodule defects can be used to improve the throughput and yield.

Proceedings Article | 19 March 2018 Presentation + Paper

Holistic analysis of aberration induced overlay error in EUV lithography

Yulu Chen, Lars Liebmann, Lei Sun, Allen Gabor, Shuo Zhao, Feixiang Luo, Obert Wood, Xuemei Chen, Daniel Schmidt, Michael Kling, Francis Goodwin

Proceedings Volume 10583, 105830D (2018) https://doi.org/10.1117/12.2297027

KEYWORDS: Aberration theory, Zernike polynomials, Diffraction, Extreme ultraviolet lithography, Wavefronts, Error analysis, Scanners, Photomasks, Overlay metrology, Lithography

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