This article reports the preparation and research of poly(3-hexylthiophene) (P3HT)/[6,6]-phenyl C61-butyric acid methyl ester (PC61BM)/Zinc oxide (ZnO) UV-visible dual-band photodetectors (PDs). At room temperature, ZnO, PC61BM and P3HT films were deposited on the FTO substrate using radio frequency magnetron sputtering technology and sol-gel technology respectively. A selective planar heterojunction organic photodetector was prepared using p-type polymer P3HT and n-type fullerene acceptor PC61BM as double active layers. Controlling phase separation in a binary complex system of donor and acceptor to improve hole extraction efficiency. This heterojunction has good UV-visible detection capabilities. Under a 2 V bias condition, the PD has a UV-visible dual-band response, with a peak at 380 nm of 0.072 A/W, and high wavelength selectivity. This demonstrates a facile method to prepare an organic-inorganic composite photodetector with high performance.
Flexible zinc oxide (ZnO) photodetectors have attracted widespread attention due to their advantages such as light weight, good flexibility, good photoelectric performance, and flexible preparation processes. This study successfully prepared high-quality ZnO thin films on polyethylene terephthalate (PET) flexible substrates using magnetron sputtering method, and completed the preparation of photodetectors by evaporating silver electrodes on the surface of the thin films. Afterwards, we tested and characterized the photoelectric performance of the prepared detector, and the results showed that the detector has good photoresponse characteristics and stable photocurrent output. The preparation of this detector on a flexible substrate provides strong support for its applications in wearable electronics, flexible displays, and other fields. This study provides valuable insights for the future development and utilization of flexible ZnO photodetectors.
With the rise of detection technology, ultraviolet detection has received attention in civilian, military and other fields, which has aroused great research interest. ZnO has great development prospects in the field of ultraviolet photodetectors due to its excellent physical, optical, and electrical properties. This article uses magnetron sputtering method to sputter high-quality ZnO thin films on inexpensive glass substrates. The morphology, crystal phase, and optical absorption of ZnO thin films were characterized by SEM, XRD, and UV/Visspectrophotometer. Metal-semiconductor-metal (MSM) structure Ti/ZnO ultraviolet photodetectors were prepared by vacuum evaporation. The effect of the number of interdigital electrodes on the performance of the photodetector was investigated by responsivity and I-V characteristic curves. The results show that the ZnO thin films prepared by magnetron sputtering are uniform and dense, have obvious ultraviolet absorption, and the performance of the photodetector is strongly dependent on the number of interdigital electrodes. When the working voltage is 10 V, the spectral response of the five pairs of interdigital electrodes is significantly enhanced (0.467 A/W). Therefore, this article provides certain reference values for the preparation and application of high-performance ZnO ultraviolet photodetectors.
This study aims to investigate the effect of electrode spacing on the performance of amorphous gallium oxide photodetectors. Firstly, we prepared a series of amorphous gallium oxide photodetector samples with electrode spacings of 80 µm, 100 µm, and 120 µm. Then, we tested the photoelectric performance of these samples. We found that the electrode spacing has a significant effect on the responsivity of the photodetectors. Due to the reduction of the carrier transmission distance, smaller electrode spacing can effectively improve the responsivity of the a-Ga2O3 photodetector, which reaches 0.096 A/W under 30 V, 255 nm illumination. This study provides a reference for the optimal design of the electrodes of amorphous Ga2O3 photodetectors.
Ga2O3 is one of the hot materials used in the preparation of solar blind ultraviolet detectors in recent years because of its wide band gap of 4.8 eV, high optical absorption coefficient, good thermal and chemical stability, strong anti-irradiation ability and low cost. Among them, amorphous Ga2O3 materials not only have the same photoelectric characteristics as single crystalline Ga2O3 materials, but also have the unique advantages of easy growth, easy preparation and low substrate requirements. The introduction of oxygen vacancy in Ga2O3 can produce intermediate energy level in its forbidden band, so that Ga2O3 has the ability of wide band detection from ultraviolet to visible. However, in photoconductive Ga2O3 photodetectors, there exists a contradictory relationship between responsiveness and response recovery speed, which is mainly attributed to the fact that photoconductive gain and sustained photoconductivity related to defects increase responsiveness and response recovery time, respectively. In addition, the mechanism of photoconductance gain and sustained photoconductance formation needs further clarification. In this paper, amorphous Ga2O3 photodetectors with good performance were prepared and the mechanism of continuous photoconductance in Ga2O3 photodetectors was investigated.
The combination of inorganic semiconductor and organic lead halide perovskite to prepare photodetectors can produce wider spectral response and better photoelectric performance to a certain extent, so it has been widely studied. Here, ZnO thin film was prepared by radio frequency magnetron sputtering, MAPbI3 was prepared by spin coating method, and ZnO/MAPbI3 composite UV-vis photodetector was prepared. ZnO is n-type semiconductor material, MAPbI3 is p-type semiconductor material and ZnO/MAPbI3 heterojunction is formed at the contact interface. Electrons from MAPbI3 diffuse into ZnO and holes from ZnO diffuse into MAPbI3, forming a built-in electric field. The surface of ZnO reacted photodesorption, the width of the depletion zone is reduced, leading to an increase in free carriers. With an operating voltage bias of 3 V, the ZnO/MAPbI3 photodetector represented significantly enhanced spectral reactivity (0.02 A/W). Therefore, our study will provide a reference for combining inorganic substances and perovskite to be used in high-performance photodetectors.
Amorphous gallium oxide (a-Ga2O3) is widely used in solar blind ultraviolet detection because of its suitable band gap, simple preparation process and excellent photoelectric properties. This article prepared high-quality a-Ga2O3 films on sapphire substrates by magnetron sputtering and evaporated Ti electrodes on the surface of the films to complete the preparation of the photodetector. Explored the optical properties of a-Ga2O3 thin films and the photoelectric performance of detectors. The detector exhibits excellent light response characteristics and high photocurrent. This experiment provides an effective reference value for the preparation of a-Ga2O3 thin films and the detection of their detectors in the solar blind band.
With the development of the high-speed information era, dual-band response devices have attracted much attention. In this paper, a Cu2O/TiO2 heterojunction photodetector (PD) prepared by hydrothermal method and electrochemical deposition method is reported, which is simple, low-cost, non-toxic and pollution-free, and has a dual-band spectral response in the ultraviolet and visible ranges, and the responsivities of 0.029 and 0.078 A W-1 are obtained, respectively. This study provides a reference for potential applications of high-performance dual-band PDs.
The metal-semiconductor-metal (MSM) structured ZnO photodetectors with same electrode spacings are made by radio frequency magnetron sputtering. A study of the thermal annealing effects on photodetectors with sequential annealing temperature (300, 400, 500 and 600 ℃).The responsivity of the photodetector was enlarged greatly after annealing the MSM device. Meanwhile, the enhancement in the dark current that resulted from the experiment was accompanied by the increasing annealing temperature. These results demonstrate that a simple route to improve the responsivities of photodetectors can be realized easily by annealing the devices.
Two sets of ZnO ultraviolet photodetectors were fabricated on the quartz and sapphire, respectively. Because of the different lattice matching of the substrate for the ZnO, the ZnO thin film based on the high matching substrate has a better crystalline quality and it is more sensitive to ultraviolet light. The ultraviolet photodetector based on the sapphire not only has a stronger absorption for the light, but also has a higher photo response than the ultraviolet photodetector based on the quartz. Which will have a profound influence for fabricating the excellent photodetectors.
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