Optimization of growth parameters for type-II 17MLs InAs/8MLs GaSb strained layer superlattices (SLS)
(λcut-off~20 μm at 77K), grown on GaSb substrates by solid source molecular beam epitaxy (MBE), has been undertaken.
Both the GaSb on InAs interface and the InAs on GaSb interface were inserted with InSb interfaces using migration
enhanced epitaxy (MEE) method to balance the lattice mismatch. The influence of the effect of the thickness of InSb
layer on the properties of the superlattice has been investigated. We demonstrate the structural properties of these SLS
structures, using high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and high-resolution
transmission electron microscopy (TEM). Optimized growth parameters were then used to grow SLS detectors with the
active region of 2-μm-thick, which demonstrated full-width half-maximum (FWHM) of 22 arcsec for the first SLS
satellite peak and nearly zero lattice mismatch between zero-order SLS peak and GaSb substrate. The cut-off wavelength
of the detector is 20 μm at 77K measured by Fourier Transform Infrared (FTIR) spectrometer with the quantum
efficiency of 10% and the Johnson noise limited detectivity reached 2.8×1010 cm Hz1/2/W at 10.55μm under -75mV bias
voltage.
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