A typical new IC design has millions of layout configurations, not seen on previous product or test chip designs.
Knowing the disposition of each and every configuration, problematic or not, is the key to optimizing design for yield. In
this paper, we present a method to systematically characterize the configuration coverage of any layout. Coverage can be
compared between designs, and configurations for which there is a lack of coverage can also be computed. When
combined with simulation, metrology, and defect data for some configurations, graph search and machine learning
algorithms can be applied to optimize designs for manufacturing yield.
KEYWORDS: Manufacturing, Metals, Design for manufacturing, Raster graphics, Image classification, Data modeling, Statistical analysis, Design for manufacturability, Current controlled current source, Optimization (mathematics)
During the yield ramp of semi-conductor manufacturing, data is gathered on specific design-related process window limiters, or yield detractors, through a combination of test structures, failure analysis, and model-based printability simulations. Case-by-case, this data is translated into design for manufacturability (DFM) checks to restrict design usage of problematic constructs. This case-by-case approach is inherently reactive: DFM solutions are created in response to known manufacturing marginalities as they are identified. In this paper, we propose an alternative, yet complementary approach. Using design-only topological pattern analysis, all possible layout constructs of a particular type appearing in a design are categorized. For example, all possible ways via forms a connection with the metal above it may be categorized. The frequency of occurrence of each category indicates the importance of that category for yield. Categories may be split into sub-categories to align to specific manufacturing defect mechanisms. Frequency of categories can be compared from product to product, and unexpectedly high frequencies can be highlighted for further monitoring. Each category can be weighted for yield impact, once manufacturing data is available. This methodology is demonstrated on representative layout designs from the 28 nm node. We fully analyze all possible categories and sub-categories of via enclosure such that 100% of all vias are covered. The frequency of specific categories is compared across multiple designs. The 10 most frequent via enclosure categories cover ≥90% of all the vias in all designs. KL divergence is used to compare the frequency distribution of categories between products. Outlier categories with unexpected high frequency are found in some designs, indicating the need to monitor such categories for potential impact on yield.
Pattern-based approaches to physical verification, such as DRC Plus, which use a library of patterns to identify problematic 2D configurations, have been proven to be effective in capturing the concept of manufacturability where traditional DRC fails. As the industry moves to advanced technology nodes, the manufacturing process window tightens and the number of patterns continues to rapidly increase. This increase in patterns brings about challenges in identifying, organizing, and carrying forward the learning of each pattern from test chip designs to first product and then to multiple product variants. This learning includes results from printability simulation, defect scans and physical failure analysis, which are important for accelerating yield ramp.
Using pattern classification technology and a relational database, GLOBALFOUNDRIES has constructed a pattern database (PDB) of more than one million potential yield detractor patterns. In PDB, 2D geometries are clustered based on similarity criteria, such as radius and edge tolerance. Each cluster is assigned a representative pattern and a unique identifier (ID). This ID is then used as a persistent reference for linking together information such as the failure mechanism of the patterns, the process condition where the pattern is likely to fail and the number of occurrences of the pattern in a design. Patterns and their associated information are used to populate DRC Plus pattern matching libraries for design-for-manufacturing (DFM) insertion into the design flow for auto-fixing and physical verification. Patterns are used in a production-ready yield learning methodology to identify and score critical hotspot patterns. Patterns are also used to select sites for process monitoring in the fab.
In this paper, we describe the design of PDB, the methodology for identifying and analyzing patterns across multiple design and technology cycles, and the use of PDB to accelerate manufacturing process learning. One such analysis tracks the life cycle of a pattern from the first time it appears as a potential yield detractor until it is either fixed in the manufacturing process or stops appearing in design due to DFM techniques such as DRC Plus. Another such analysis systematically aggregates the results of a pattern to highlight potential yield detractors for further manufacturing process improvement.
Design rule checks (DRC) are the industry workhorse for constraining design to ensure both physical and electrical manufacturability. Where DRCs fail to fully capture the concept of manufacturability, pattern-based approaches, such as DRC Plus, fill the gap using a library of patterns to capture and identify problematic 2D configurations. Today, both a DRC deck and a pattern matching deck may be found in advanced node process development kits. Major electronic design automation (EDA) vendors offer both DRC and pattern matching solutions for physical verification; in fact, both are frequently integrated into the same physical verification tool.
In physical verification, DRCs represent dimensional constraints relating directly to process limitations. On the other hand, patterns represent the 2D placement of surrounding geometries that can introduce systematic process effects. It is possible to combine both DRCs and patterns in a single topological pattern representation. A topological pattern has two separate components: a bitmap representing the placement and alignment of polygon edges, and a vector of dimensional constraints. The topological pattern is unique and unambiguous; there is no code to write, and no two different ways to represent the same physical structure. Furthermore, markers aligned to the pattern can be generated to designate specific layout optimizations for improving manufacturability.
In this paper, we describe how to do systematic physical verification with just topological patterns. Common mappings between traditional design rules and topological pattern rules are presented. We describe techniques that can be used during the development of a topological rule deck such as: taking constraints defined on one rule, and systematically projecting it onto other related rules; systematically separating a single rule into two or more rules, when the single rule is not sufficient to capture manufacturability constraints; creating test layout which represents the corners of what is allowed, or not allowed by a rule; improving manufacturability by systematically changing certain patterns; and quantifying how a design uses design rules. Performance of topological pattern search is demonstrated to be production full-chip capable.
KEYWORDS: Lithography, Simulation of CCA and DLA aggregates, Laser Doppler velocimetry, Design for manufacturability, Transistors, Silicon, Standards development, Design for manufacturing, Instrument modeling, Current controlled current source
Lithography and stress effects cause Layout Dependent Variability (LDV), which results in unexpected and unaccounted
timing variations. Because standard cells yield unpredicted timing variation due to context differences, the LDV
methodology includes the Cell Context Analysis (CCA) flow that provides designers a comprehensive framework to
optimize the design layouts and tune the cell's electrical performance. Conventional static timing analysis tools do not
incorporate the electrical impact due to nearby context proximity. The LDV methodology includes an Advanced Timing
Analysis (ATA) flow that accounts for the electrical impact of cell contexts, which provides more accurate timing results
and identifies new timing violations on critical paths.
This paper presents the electrical DFM (eDFM) methodologies developed by GLOBALFOUNDRIES using Cadence LEA (Litho Electrical Analyzer) at 28nm technology node. The paper also discusses about the CCA results for more than 40 contexts of each cell and reports mean delay variations of 3% or more.
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