Device size has now reached the nanoscale range due to advancements in technology and scaling in the fields of very large-scale integration. The single-electron transistor (SET) is a promising solid-state device that can provide an extension for Moore’s law and is suitable for next-generation nanoelectronics design and application. Due to the Coulomb oscillation properties of the SET in addition to the high gain and ultra-low power consumption of the tunnel field effect transistor (TFET), the implementation of the hybrid SET/TFET will primarily benefit high density (nanoscale), low-power integrated circuits (ICs), and fast switching devices. In this study, we present a hybrid model of a graphene-based single electron transistor [1] with an n-type double-gate graphene nanoribbon TFET structure [2] utilized as an integrator. For simplicity, the TFET is used in the shorted gate configuration by connecting both the front and back gates. Following this, we design a fourth order analog low pass filter using the integrator circuit of SET/TFET. With the implementation in SPICE and Matlab, we analyze the transfer function of our proposed filter from its frequency characteristics (Bode plot). Our findings reveal significant roll-off and, as a consequence, increased filtering functions with low power consumption. This study adds to the realization and implementation of SET/TFET into applications where high frequency contributes to the reliability, performance, and low power required for nanoscale devices and designs.
Zinc oxide (ZnO) nanopowder-based nanoparticles (NPs) with a mean diameter of less than 100 nm were mixed with synthesized electrophoretic deposition (EPD) solutions under different concentrations and deposited onto silicon (Si), 3-Aminopropyl-Triethoxysilane (APTES) functionalized silicon (APTES-Si), and aluminum (Al) substrates. The wavelength ranges and intensity of each structure's emission spectrum are determined using fluorescence spectroscopy. We will describe our findings considering our hypothesis that the underlying substrate conductivity and concentrations of ZnO nanoparticles in the electrophoretic deposition solutions are significant components in achieving higher intensity fluorescence of ZnO thin films required for devices. This study shows that ZnO NPs with higher concentrations deposited on a conductive substrate emit higher emission intensity. The presence of visible emission spectra for ZnO NPs deposited on all three substrate types show potential for future optical device applications employing the next generation of nanoscale electronic materials.
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