A complete design of 1.3 μm AlGaInAs/InP narrow stripe semiconductor lasers for self-pulsating operation is realised by using a 2×1D simulation model. This numerical model is based on the effective index method and self-sustained pulsation mechanism in the narrow stripe lasers. The self-pulsation effect is enhanced by the self focusing and defocusing of the optical field which is dependent on the modification of carrier densities in the active region. The resulting AlGaInAs-InP device with compressively strained multi-QWs showed self-pulsation frequency of 3.5 GHz.
Microcavity semiconductor lasers are important devices from both practical and fundamental viewpoints. Practically, these lasers/resonators are excellent candidates for the next generation of all-optical network components, including switches and filters, because of their size and low power consumption. We will present a novel packaging scheme which further facilitates these applications. This scheme involves the bonding of the optically pumped micro-resonator to a piece of multi-mode fiber. The laser is optically pumped directly and the emission is collected through another multi-mode fiber. This raises the possibility for 'all fiber' packaging schemes where the micro-resonator is sandwiched between two pieces of optical fiber. The pump and signal light can be injected in at one end and the output collected at the other. This illustrates the potential that these devices have for all optical network applications. In addition, the dynamic properties of these lasers are not well understood because the low level of laser light (order of nanoWatts) makes experimental analysis difficult. We will present experimental results that highlight some of the future challenge, which will have to be overcome if these devices are to realise their potential.
We describe the different mechanisms to generate waves in the transverse section of lasers. Our analysis, based on the Maxwell-Bloch equations, is compared to recent experimental results.
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