Dr. Hanqing Wen Profile

Dr. Hanqing Wen

Adv. R&D Engineer at Boston Univ

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Publications (3)

Proceedings Article | 26 June 2017 Presentation

A comparative study of carrier lifetimes in ESWIR and MWIR materials: HgCdTe, InGaAs, InAsSb, and GeSn (Conference Presentation)

Enrico Bellotti, Hanqing Wen, Stefano Dominici, Andreu Glasmann

Proceedings Volume 10177, 101771F (2017) https://doi.org/10.1117/12.2265894

KEYWORDS: Mercury cadmium telluride, Mid-IR, Indium gallium arsenide, Long wavelength infrared, Infrared detection, Crystals, Doping, Photodetectors, Infrared technology, Current controlled current source

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Proceedings Article | 20 May 2016 Paper

Numerical modeling of extended short wave infrared InGaAs focal plane arrays

Andreu Glasmann, Hanqing Wen, Enrico Bellotti

Proceedings Volume 9819, 981906 (2016) https://doi.org/10.1117/12.2223442

KEYWORDS: Indium gallium arsenide, Short wave infrared radiation, Staring arrays, Infrared imaging, Infrared radiation, Numerical modeling, Indium, Sensors, Instrument modeling, Photodiodes

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Proceedings Article | 5 October 2015 Presentation

Full-band structure modeling of the radiative and non-radiative properties of semiconductor materials and devices (Presentation Recording)

Enrico Bellotti, Hanqing Wen, Benjamin Pinkie, Masahiko Matsubara, Francesco Bertazzi

Proceedings Volume 9555, 95550H (2015) https://doi.org/10.1117/12.2190357

KEYWORDS: Instrument modeling, Semiconductor materials, Sensors, Mercury cadmium telluride, Semiconductors, Physics, Systems modeling, Silicon, Germanium, Compound semiconductors

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