Dr. Heebom Kim Profile

Dr. Heebom Kim

at SAMSUNG Electronics Co Ltd

SPIE Involvement:

Author

Publications (42)

Proceedings Article | 26 August 2024 Paper

Paper

Improvement of mask pattern placement error using novel resist charging control methodology in multi-beam mask writer

Hyoyeon Kim, Hyungrae Noh, Wonsik Shin, Kangho Park, Youngjae Lee, Sangho Jo, Youngsu Sung, Hojune Lee, Heebom Kim, Jin Choi, Sanghee Lee, Alexander Egl, Gottfried Hochleitner, Matthias Kühmayer, Matthias Liertzer, Francesco Massa, Mathias Tomandl

Proceedings Volume 13177, 131770V (2024) https://doi.org/10.1117/12.3032199

KEYWORDS: Error analysis, Semiconducting wafers, Calibration, Logic, Overlay metrology, Logic devices, Simulations, Palladium, Optical alignment, Image registration, Photomasks

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Proceedings Article | 10 April 2024 Presentation

Presentation

MBMW's comprehensive requirements and roles for next EUV era and its mass production

Inhwan Noh, Jongmun Park, Heebom Kim, Jin Choi, Sang-Hee Lee, Hojune Lee, Byung-Sup Ahn, Youngsu Sung

Proceedings Volume PC12956, PC1295605 (2024) https://doi.org/10.1117/12.3009572

KEYWORDS: Extreme ultraviolet, Logic

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Proceedings Article | 21 November 2023 Presentation + Paper

Presentation + Paper

Novel method for precise curved EUV mask CD characterization by adopting machine learning

Jaeseo Lee, Inhwan Noh, Youngsu Sung, Heebom Kim, Ji-hoon Kang, Seunghye Kim, Jin Choi

Proceedings Volume 12751, 127510B (2023) https://doi.org/10.1117/12.2687781

KEYWORDS: Education and training, Machine learning, Data modeling, Algorithm development, Modeling, 3D modeling, Feature extraction, Design and modelling, Artificial neural networks, Optical proximity correction

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Proceedings Article | 16 November 2022 Presentation

Presentation

Damage-free pinpoint particle removal for EUV pellicle cleaning

Hyun-Gyu Kang, Dong Hyeon Kwon, Tae-Gon Kim, Jin-Ho Ahn, Byung-Hoon Lee, Jin-Goo Park, Hwan Seok Seo, Hee Bom Kim

Proceedings Volume PC12293, PC1229308 (2022) https://doi.org/10.1117/12.2641583

KEYWORDS: Pellicles, Particles, Extreme ultraviolet, Safety, Particle systems, Particle contamination, Atomic force microscopy, Silica, Optical microscopes, Nanomanipulation

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Proceedings Article | 19 March 2018 Paper

Paper

Theoretical modeling of PEB procedure on EUV resist using FDM formulation

Muyoung Kim, Junghwan Moon, Joonmyung Choi, Byunghoon Lee, Changyoung Jeong, Heebom Kim, Maenghyo Cho

Proceedings Volume 10583, 1058323 (2018) https://doi.org/10.1117/12.2296494

KEYWORDS: Diffusion, Polymers, Chemical reactions, Extreme ultraviolet lithography, Photoresist materials, Line edge roughness, Electrons, Molecules, Finite difference methods

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Proceedings Article | 16 October 2017 Presentation

Presentation

EUV mask readiness for HVM (Conference Presentation)

Heebom Kim, Chang Young Jeong, Donggun Lee, Ji Hoon Na, Hwan-Seok Seo, Mun Ja Kim, Sung-Won Kwon, Chan-Uk Jeon

Proceedings Volume 10451, 104510I (2017) https://doi.org/10.1117/12.2280687

KEYWORDS: Extreme ultraviolet, Photomasks, Pellicles, Inspection, Extreme ultraviolet lithography, High volume manufacturing, Scanners, Transmittance

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Proceedings Article | 28 March 2017 Presentation + Paper

Presentation + Paper

Application of actinic mask review system for the preparation of HVM EUV lithography with defect free mask

Jihoon Na, Donggun Lee, Changhwan Do, Hong-seok Sim, Jung-Hwan Lee, Jungyoup Kim, Hwan-Seok Seo, Heebom Kim, Chan Uk Jeon

Proceedings Volume 10145, 101450M (2017) https://doi.org/10.1117/12.2257390

KEYWORDS: Photomasks, Extreme ultraviolet, Imaging systems, Extreme ultraviolet lithography, Airborne remote sensing, Inspection, Line width roughness, High volume manufacturing, Lead, Metrology, Semiconducting wafers, Scanning electron microscopy, SRAF, Binary data, EUV optics, Mirrors

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Proceedings Article | 24 March 2017 Paper

Paper

Computational approach on PEB process in EUV resist: multi-scale simulation

Muyoung Kim, Junghwan Moon, Joonmyung Choi, Byunghoon Lee, Changyoung Jeong, Heebom Kim, Maenghyo Cho

Proceedings Volume 10143, 101432E (2017) https://doi.org/10.1117/12.2266540

KEYWORDS: Extreme ultraviolet lithography, Computer simulations, Photoresist processing, Line edge roughness, Chemical reactions, Photoresist materials, Photochemistry, Semiconductors, Photoresist developing, Diffusion, Molecules, Electrons, Polymers, Monte Carlo methods

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Proceedings Article | 18 March 2016 Paper

Paper

Study of nanometer-thick graphite film for high-power EUVL pellicle

Mun Ja Kim, Hwan Chul Jeon, Roman Chalykh, Eokbong Kim, Jihoon Na, Byung-Gook Kim, Heebom Kim, Chanuk Jeon, Seul-Gi Kim, Dong-Wook Shin, Taesung Kim, Sooyoung Kim, Jung Hun Lee, Ji-Beom Yoo

Proceedings Volume 9776, 97761Z (2016) https://doi.org/10.1117/12.2218228

KEYWORDS: Extreme ultraviolet lithography, Pellicles, Silicon, Extreme ultraviolet, Graphene, Crystals, Transmittance, Silicon films, Thin films, Lithography, Hydrogen, Infrared lasers, Thermography

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Proceedings Article | 9 July 2015 Paper

Paper

Development of high-transmittance phase-shifting mask for ArF immersion lithography

Won-suk Ahn, Hwan-Seok Seo, Ju-Mi Bang, Ji-Young Kim, Jae-Min Song, Byoung-Hoon Seung, Hee-Bom Kim, Chan-Uk Jeon

Proceedings Volume 9658, 965808 (2015) https://doi.org/10.1117/12.2203239

KEYWORDS: Photomasks, Chromium, Etching, Transmittance, Semiconducting wafers, Nanoimprint lithography, Phase shifts, Image processing, Immersion lithography, Optical lithography

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Proceedings Article | 27 March 2014 Paper

Paper

Advanced develop processes for reducing defects related with e-beam resists

Byunghoon Lee, Sung-Jae Han, Se-Gun Moon, Hee Bom Kim

Proceedings Volume 9051, 90510W (2014) https://doi.org/10.1117/12.2047368

KEYWORDS: Photomasks, Photoresist processing, Standards development, Manufacturing, Semiconducting wafers, Inspection, Extreme ultraviolet, Optics manufacturing, EUV optics, Surface properties

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Proceedings Article | 27 March 2014 Paper

Paper

Inorganic resist materials based on zirconium phosphonate for atomic force microscope lithography

Mankyu Kang, Seonae Kim, JinHyuck Jung, Heebom Kim, Inkyun Shin, Chanuk Jeon, Haiwon Lee

Proceedings Volume 9051, 90511U (2014) https://doi.org/10.1117/12.2045641

KEYWORDS: Lithography, Zirconium, Atomic force microscopy, Metals, Coating, Image processing, Electron beam lithography, Oxides, Atomic force microscope, Line edge roughness

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Proceedings Article | 1 October 2013 Paper

Paper

A study on the ESD damage of a silicon oxy-nitride hard mask on the chromium surface of PSM blank

Songbae Moon, Heebom Kim, Inkyun Shin, Chanuk Jeon

Proceedings Volume 8880, 88801N (2013) https://doi.org/10.1117/12.2025457

KEYWORDS: Silicon, Photomasks, Chromium, Etching, Silicon films, Capacitors, Optical lithography, Mask making, Oxides, Gases

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Proceedings Article | 28 June 2013 Paper

Paper

E-beam resist outgassing for study of correlation between resist sensitivity and e-beam optic contamination

Sung-Il Lee, Yun Song Jeong, Cheol Hong Park, Hee Bom Kim, Inkyun Shin, Chan-Uk Jeon

Proceedings Volume 8701, 87010Z (2013) https://doi.org/10.1117/12.2032772

KEYWORDS: Contamination, Extreme ultraviolet, Semiconducting wafers, Chemical analysis, Extreme ultraviolet lithography, Electron beam lithography, Ions, Photomasks, Molecules, EUV optics

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Proceedings Article | 14 October 2011 Paper

Paper

The requirements for the future e-beam mask writer: statistical analysis of pattern accuracy

Sang Hee Lee, Jin Choi, Hee Bom Kim, Byung Gook Kim, Han-Ku Cho

Proceedings Volume 8166, 81661B (2011) https://doi.org/10.1117/12.896977

KEYWORDS: Photomasks, Error analysis, Line edge roughness, Vestigial sideband modulation, Critical dimension metrology, Electron beam lithography, Inspection, Mask making, Image registration, Calibration

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Proceedings Article | 14 October 2011 Paper

Paper

Pattern placement error due to resist charging effect at 50kV e-beam writer: mechanism and its correction

Jin Choi, Suk Jong Bae, Hee Bom Kim, B. G. Kim, Han Ku Cho

Proceedings Volume 8166, 81661Z (2011) https://doi.org/10.1117/12.898856

KEYWORDS: Photomasks, Extreme ultraviolet, Scattering, Critical dimension metrology, Monte Carlo methods, Lithography, Electron beam lithography, Semiconducting wafers, Double patterning technology, Astatine

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Proceedings Article | 25 September 2010 Paper

Paper

Degradation of pattern quality due to strong electron scattering in EUV mask

Jin Choi, Rae Won Lee, Sang Hee Lee, Byung Sup Ahn, Hee Bom Kim, Sang-Gyun Woo, Han Ku Cho

Proceedings Volume 7823, 78230D (2010) https://doi.org/10.1117/12.864212

KEYWORDS: Photomasks, Extreme ultraviolet, Scattering, Monte Carlo methods, Ray tracing, Electron beam lithography, Molybdenum, Metals, Ion beams, Laser scattering

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Proceedings Article | 27 May 2010 Paper

Paper

Requirements of e-beam size and position accuracy for photomask of sub-32 nm HP device

Jin Choi, Sang Hee Lee, Hee Bom Kim, Byung Gook Kim, Sang-Gyun Woo, Han Ku Cho

Proceedings Volume 7748, 774819 (2010) https://doi.org/10.1117/12.868174

KEYWORDS: Photomasks, Critical dimension metrology, Electron beams, Lithography, Line edge roughness, Vestigial sideband modulation, Electron beam lithography, Optical proximity correction, Computational lithography, Extreme ultraviolet lithography

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Proceedings Article | 26 May 2010 Paper

Paper

Mask writing time explosion and its effect on CD control in e-beam lithography

Sang Hee Lee, Jin Choi, Seong Jun Min, Hee Bom Kim, Byung Gook Kim, Sang-Gyun Woo, Han-Ku Cho

Proceedings Volume 7748, 77480J (2010) https://doi.org/10.1117/12.868264

KEYWORDS: Photomasks, Electron beam lithography, Optical proximity correction, Optical simulations, Error analysis, Beam controllers, Mask making, Error control coding, Vestigial sideband modulation, Lithography

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Proceedings Article | 11 December 2009 Paper

Paper

Development and evaluation of new MRC parameter for aggressive mask optimization

Seong-bo Shim, Young-chang Kim, Seong-hoon Jang, Hee-bom Kim, Sung-woo Lee, Seong-woon Choi, Han-ku Cho, Chan-hoon Park

Proceedings Volume 7520, 75200U (2009) https://doi.org/10.1117/12.839398

KEYWORDS: Photomasks, SRAF, Inspection, Critical dimension metrology, Source mask optimization, Tolerancing, Manufacturing, Image quality, Scanning electron microscopy, Defect inspection

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Proceedings Article | 4 December 2008 Paper

Paper

Optimization of mask manufacturing rule check constraint for model based assist feature generation

Seongbo Shim, Young-chang Kim, Yong-jin Chun, Seong-Woo Lee, Suk-joo Lee, Seong-woon Choi, Woo-sung Han, Seong-hoon Chang, Seok-chan Yoon, Hee-bom Kim, Won-tai Ki, Sang-gyun Woo, Han-gu Cho

Proceedings Volume 7140, 714030 (2008) https://doi.org/10.1117/12.804668

KEYWORDS: SRAF, Photomasks, Manufacturing, Semiconducting wafers, Image quality, Lithography, Optical proximity correction, Tolerancing, Critical dimension metrology, Optimization (mathematics)

Read Abstract +

SRAF (sub-resolution assist feature) generation technology has been a popular resolution enhancement technique in photo-lithography past sub-65nm node. It helps to increase the process window, and these are some times called ILT(inverse lithography technology). Also, many studies have been presented on how to determine the best positions of SRAFs, and optimize its size. According to these reports, the generation of SRAF can be formulated as a constrained optimization problem. The constraints are the side lobe suppression and allowable minimum feature size or MRC (mask manufacturing rule check). As we know, bigger SRAF gives better contribution to main feature but susceptible to SRAF side lobe issue. Thus, we finally have no choice but to trade-off the advantages of the ideally optimized mask that contains very complicated SRAF patterns to the layout that has been MRC imposed applied to it. The above dilemma can be resolved by simultaneously using lower dose (high threshold) and cleaning up by smaller MRC. This solution makes the room between threshold (side lobe limitation) and MRC constraint (minimum feature limitation) wider. In order to use smaller MRC restriction without considering the mask writing and inspection issue, it is also appropriate to identify the exact mask writing limitation and find the smart mask constraints that well reflect the mask manufacturability and the e-beam lithography characteristics. In this article, we discuss two main topics on mask optimizations with SRAF. The first topic is on the experimental work to find what behavior of the mask writing ability is in term of several MRC parameters, and we propose more effective MRC constraint for aggressive generation of SRAF. The next topic is on finding the optimum MRC condition in practical case, 3X nm node DRAM contact layer. In fact, it is not easy to encompass the mask writing capability for very complicate real SRAF pattern by using the current MRC constraint based on the only width and space restriction. The test mask for this experimental work includes not only typical split patterns but also real device patterns that are generated by in-house model-based assist feature generation tool. We analyzed the mask writing result for typical patterns and compared the simulation result, and wafer result for real device patterns.

Proceedings Article | 19 May 2008 Paper

Paper

IntenCD: an application for CD uniformity mapping of photomask and process control at maskshops

Heebom Kim, MyoungSoo Lee, Sukho Lee, Young-Su Sung, Byunggook Kim, Sang-Gyun Woo, HanKu Cho, Michael Ben Yishai, Lior Shoval, Christophe Couderc

Proceedings Volume 7028, 70281K (2008) https://doi.org/10.1117/12.793061

KEYWORDS: Photomasks, Critical dimension metrology, Inspection, Semiconducting wafers, Scanning electron microscopy, Process control, Airborne remote sensing, Lithography, Defect inspection, Imaging systems

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Proceedings Article | 7 March 2008 Paper

Paper

Rigorous modeling and analysis of impact produced by microstructures in mask on wafer pattern fidelity

Irina Pundaleva, Roman Chalykh, MyoungSoo Lee, HeeBom Kim, ByungGook Kim, HanKu Cho

Proceedings Volume 6924, 69244H (2008) https://doi.org/10.1117/12.773203

KEYWORDS: Photomasks, Semiconducting wafers, Diffraction, Quartz, Distortion, Transmittance, Femtosecond phenomena, Refractive index, Binary data, Pulsed laser operation

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Proceedings Article | 30 October 2007 Paper

Paper

Requirements of photomask registration for the 45nm node and beyond: Is it possible?

Jin Choi, Hee Bom Kim, Sang Hee Lee, Dong Hun Lee, Hae Young Jeong, Jeung Woo Lee, Byung Gook Kim, Sang-Gyun Woo, Han Ku Cho

Proceedings Volume 6730, 67301O (2007) https://doi.org/10.1117/12.746571

KEYWORDS: Photomasks, Image registration, Pellicles, Electron beam lithography, Finite element methods, Etching, Optical lithography, Positioning equipment, Error analysis, Distortion

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Proceedings Article | 15 May 2007 Paper

Paper

New PEC optimization for the mask fabrication of sub-50-nm memory device

Sanghee Lee, Dongguk Ryu, Junghoon Park, Dongseok Nam, Heebom Kim, Byunggook Kim, Sanggyun Woo, Hanku Cho

Proceedings Volume 6607, 660725 (2007) https://doi.org/10.1117/12.728988

KEYWORDS: Mask making, Photomasks, Electron beam lithography, Monte Carlo methods, Control systems, Optical proximity correction, Electron beams, Laser scattering, Scattering, Backscatter

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Proceedings Article | 14 May 2007 Paper

Paper

Optical performance enhancement technique for 45-nm node with binary mask

Jin-Sik Jung, Hee-Bom Kim, Jeung-Woo Lee, Sang-Gyun Woo, Han-Ku Cho

Proceedings Volume 6607, 66071I (2007) https://doi.org/10.1117/12.728965

KEYWORDS: Oxides, Photomasks, Nanoimprint lithography, Binary data, Resolution enhancement technologies, Etching, Manufacturing, Chromium, Diffraction, Phase shifts

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Proceedings Article | 12 May 2007 Paper

Paper

Scatterometry based profile metrology of two-dimensional patterns of EUV masks

Irina Pundaleva, Roman Chalykh, Heebom Kim, Byunggook Kim, Hanku Cho

Proceedings Volume 6607, 66070S (2007) https://doi.org/10.1117/12.728942

KEYWORDS: Scatterometry, 3D metrology, Extreme ultraviolet, Photomasks, Diffraction, Scatter measurement, Polarization, Metrology, Extreme ultraviolet lithography, Shape analysis

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Proceedings Article | 27 March 2007 Paper

Paper

Phase-shifted assist feature OPC for sub-45-nm node optical lithography

Gi-Sung Yoon, Hee-Bom Kim, Jeung-Woo Lee, Seong-Woon Choi, Woo-Sung Han

Proceedings Volume 6520, 65201A (2007) https://doi.org/10.1117/12.712445

KEYWORDS: Photomasks, Optical proximity correction, Diffraction, Semiconducting wafers, Manufacturing, SRAF, Optical lithography, Opacity, Nanoimprint lithography, Critical dimension metrology

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Proceedings Article | 27 March 2007 Paper

Paper

Optical performance enhancement technique for 45-nm-node with binary mask

Jin-Sik Jung, Hee-Bom Kim, Jeung-Woo Lee, Sung-Woon Choi, Woo-Sung Han

Proceedings Volume 6520, 652026 (2007) https://doi.org/10.1117/12.711328

KEYWORDS: Oxides, Nanoimprint lithography, Binary data, Manufacturing, Etching, Optics manufacturing, Chromium, Diffraction, Phase shifts, Near field

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Proceedings Article | 26 June 2003 Paper

Paper

Comparative study of chromeless and attenuated phase-shift mask for 0.3-k1 ArF lithography of DRAM

Tae-Seung Eom, Chang Lim, Seo-Min Kim, Hee-Bom Kim, Se-Young Oh, Won-Kwang Ma, Seung-Chan Moon, Ki Shin

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485452

KEYWORDS: Photomasks, Lithography, Transmittance, Phase shifts, Diffraction, Quartz, Mask making, Etching, Optical lithography, Critical dimension metrology

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Proceedings Article | 30 July 2002 Paper

Paper

Double-exposure strategy using OPC and simulation and the performance on wafer with sub-0.10-um design rule in ArF lithography

Se-Young Oh, Wan-Ho Kim, Hyoung-Soon Yune, Hee-Bom Kim, Seo-Min Kim, Chang-Nam Ahn, Ki-Soo Shin

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474541

KEYWORDS: Optical proximity correction, Lithography, Semiconducting wafers, Double patterning technology, Optical lithography, Reticles, Device simulation, Electroluminescence, Image processing, Lithographic illumination

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As the pattern size becomes smaller, double or multi exposure is required unless the epochal solutions for overcoming the limits of present lithography system do appear or are discovered. ArF DET (double exposure technology) strategy based on manual OPC with in-house simulation tool, HOST (Hynix OPC simulation tool), is suggested as a possible exposure method to extend the limitation of current lithography. HOST requires no additional procedures and separate layout optimizations of each region in terms of OPC are enough. Furthermore, it is possible to change illumination condition of each region and the overlap between two regions with ease. The results from the simulation are pattern size and profile of each condition according to the defous and misregistration. 0.63 NA ArF Scanner and Clariant resist is used for wafer process. The resist was coated on Clariant organic BARC using 0.24 um thickness. Dipole illumination for cell region and annular illumination for peripheral region are used. Cell region contains 0.20 um pitch duty pattern and peripheral region 0.24 um pitch duty pattern. The boundary of two regions is investigated in view of validity of stitching itself. The layout of reticles used as the cell and peripheral region are optimized by OPC, respectively and then, additional OPC was treated to the boundary, i.e., stitching area to compensate the cross term of the boundary caused by separate and independent optimization with OPC in the cell and the peripheral regime. The final patterns were acquired by defining the cell at first and the peripheral region secondly with different defocus and registration in respect to the cell. The actual data on wafer are presented according to defocus and one region's overlay offset relatively to the other region. And the outstanding matching between simulation results and in-line data are shown. Lithography process window for stable patterning is thoroughly investigated in view of depth of focus, energy latitude, registration between two stitched regions and stitching itself in the boundary. It is found from the experiment that total DOF of DE (double exposure) is 0.5 um and the total EL of DE is 10.0% in this paper. At present, it is very difficult to ensure stable process margin for the sub-0.10 um patterning. But there is a promising technology called stitching with special optimization. In addition, this technology will be nominated as an eternal candidate process whenever our lithography is in the adversity at the limits of his days.

Proceedings Article | 30 July 2002 Paper

Paper

0.33-k1 ArF lithography for 100-nm DRAM

Cheol-Kyu Bok, Seok-Kyun Kim, Hee-Bom Kim, Jin-Sung Oh, Chang-Nam Ahn, Ki-Soo Shin

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474631

KEYWORDS: Lithography, Photomasks, Photoresist processing, Lithographic illumination, Optical proximity correction, Etching, Scanners, Scanning electron microscopy, Resistance, Optical lithography

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Proceedings Article | 30 July 2002 Paper

Paper

Optical lithography simulation considering impact of mask errors

Hee-Bom Kim, Won-Kwang Ma, Chang-Nam Ahn, Ki-Soo Shin

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474508

KEYWORDS: Photomasks, Optical proximity correction, Optical lithography, Semiconducting wafers, Image processing, Solid modeling, Scanning electron microscopy, Mask making, Point spread functions, Optical simulations

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Proceedings Article | 30 July 2002 Paper

Paper

Defect printability and specification of ArF mask in repeating feature

Wan-Ho Kim, Won-Kwang Ma, Hee-Bom Kim

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474518

KEYWORDS: Photomasks, Semiconducting wafers, Inspection, Printing, Lithography, Manufacturing, Photoresist processing, Cadmium, Diffusion, Semiconductors

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Proceedings Article | 14 September 2001 Paper

Paper

Application of full-chip level optical proximity correction to memory device with sub-0.10-um design rule and ArF lithography

Hyoung-Soon Yune, Hee-Bom Kim, Wan-Ho Kim, Chang-Nam Ahn, Young-Mog Ham, Ki-Soo Shin

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435724

KEYWORDS: Optical proximity correction, Photomasks, Lithography, Semiconducting wafers, Critical dimension metrology, Model-based design, Data modeling, Reticles, Process modeling, Image processing

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Recently, the miniaturization of the design rule pushes the pattern sizes in the peripheral region as well as cell region to the resolution limit of exposure tools. Therefore it is necessary to apply optical proximity correction (OPC) not only to the patterns in cell region but also to those in peripheral region. It is impossible to apply manual OPC method in peripheral region. Because the peripheral region is composed of random patterns with large data volume, and it takes too long execution time with manual OPC. For random pattern OPC in peripheral region, automatic OPC tool is required. Now for the automatic OPC tool, model-based and rule-based methods are developed for the commercial use. In this paper, the effectively applicable process is discussed using model-based method in automatic OPC at the sub-0.10 micrometer design rule in ArF lithography. For the application of automatic OPC tool at the design rule of sub-0.10 micrometer and ArF process in memory devices the following problem should be cleared. In small size of design rule, we should consider not only pattern fidelity but also process margin such as depth of focus (DOF) and exposure latitude (EL) at the cell OPC. But automatic OPC tool is insufficient to be applied for cell region OPC, because it considers not process margin but pattern fidelity and it has low accuracy using much approximation model to reduce layout correction time. To solve this problem, we suggest a full chip OPC process using both automatic OPC tool and the manual OPC method using the novel lithography simulation model (Diffused Aerial Image Model, DAIM). DAIM is available to predict wafer pattern and process margin of cell, its accuracy is verified in ArF process as in KrF process. We could see small standard deviation error between experiment and DAIM in ArF process using various line or space patterns, which is about 9 nm at binary intensity mask (BIM). So the manual OPC with DAIM resulted in the wide process margin and good pattern fidelity overcoming the limitation of automatic OPC tool. However it is necessary to correlate energy level of DAIM for cell region OPC with that of the model in the automatic OPC tool for peripheral region OPC, because cell and peripheral region are exposed with the same exposure dose in stepper or scanner. In case of ArF process, we could see the small difference of energy level and standard deviation error, which is about 1.4%, 2 nm at BIM and 6.3%, 3 nm at half-tone phase shift mask (PSM), between DAIM and automatic OPC tool. As the result of using DAIM and automatic OPC tool simultaneously at full chip OPC, we could see improved results from cell to peripheral region at the sub-0.10 micrometer design rule in ArF lithography.

Proceedings Article | 22 January 2001 Paper

Paper

Potentialities of sub-100-nm optical lithography of alternating and phase-edge phase-shift mask for ArF lithography

Sang-Sool Koo, Hee-Bom Kim, Hyoung-Soon Yune, Jee-Suk Hong, Seung-Weon Paek, Tae-Seung Eom, Chang-Nam Ahn, Young-Mog Ham, Ki-Ho Baik, Kyu-Yong Lee, Lee-Ju Kim, Hong-Seok Kim

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410711

KEYWORDS: Lithography, Photomasks, Critical dimension metrology, Phase shifts, Electroluminescence, Optical lithography, Chromium, Etching, Mask making, Scanning electron microscopy

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Proceedings Article | 19 July 2000 Paper

Paper

Mask critical dimension error on optical lithography

Tae-Seung Eom, Sang-Sool Koo, Seung-Weon Paek, Hee-Bom Kim, Chang-Nam Ahn, Ki-Ho Baik

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392047

KEYWORDS: Photomasks, Optical lithography, Diffusion, Critical dimension metrology, Lithography, Transmittance, Semiconducting wafers, Lithographic illumination, Phase shifts, Image processing

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Proceedings Article | 5 July 2000 Paper

Paper

Accuracy of diffused aerial image model for full-chip-level optical proximity correction

Jee-Suk Hong, Hee-Bom Kim, Hyoung-Soon Yune, Chang-Nam Ahn, Young-Mo Koo, Ki-Ho Baik

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388936

KEYWORDS: Optical proximity correction, Photoresist processing, Lithography, Diffusion, Critical dimension metrology, Image processing, Photomasks, Cadmium, Error analysis, Deep ultraviolet

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Proceedings Article | 5 July 2000 Paper

Paper

Exposure latitude analysis for dense line and space patterns by using diffused aerial image model

Chang-Nam Ahn, Hee-Bom Kim, Ki-Ho Baik

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389058

KEYWORDS: Diffusion, Photomasks, Semiconducting wafers, Lithography, Critical dimension metrology, Image processing, Electroluminescence, Diffraction, Electron beam lithography, Optical lithography

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Proceedings Article | 5 July 2000 Paper

Paper

Validation of repair process for DUV attenuated phase-shift mask

Seung-Weon Paek, Hee-Bom Kim, Chang-Nam Ahn, Young-Mo Koo, Ki-Ho Baik

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389051

KEYWORDS: Photomasks, Semiconducting wafers, Deep ultraviolet, Lithography, Data modeling, Control systems, Binary data, Tolerancing, Opacity, Reliability

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Proceedings Article | 29 June 1998 Paper

Paper

Novel approximate model for resist process

Chang-Nam Ahn, Hee-Bom Kim, Ki-Ho Baik

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310808

KEYWORDS: Image processing, Photoresist processing, Diffusion, Photomasks, Optical proximity correction, Optical lithography, Process modeling, Optical components, Image analysis, Chemical elements

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Proceedings Article | 7 June 1996 Paper

Paper

Practical implementation of alternating PSM to memory device of sub-0.25-um technology

Chang-Nam Ahn, Hung-Eil Kim, Hee-Bom Kim, Ki-Ho Baik

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240916

KEYWORDS: Photomasks, Semiconducting wafers, Phase shifts, Quartz, Deep ultraviolet, Lithography, Critical dimension metrology, Light scattering, Printing, Scanning electron microscopy

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Showing 5 of 42 publications

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