A RF wireless capacitive pressure sensor is developed. The sensor has integrated inductor with the pressure sensitive
capacitor as LC circuit. The resonant frequency of the sensor changes as the capacitance changes with applied pressure.
The sensor uses LPCVD silicon nitride as sensitive membrane and the residual stress of the membrane has been measure
as 139MPa. The sensor has size of 10 mm × 4 mm × 0.5 um. The sensor presents a pressure sensitivity of 1.65
MHz/cmH2O in pressure range of 0-20 cmH2O. The deflection of different shape of membranes is discussed. The
deflection of square membrane is 130% to circular membrane under same applied pressure.
A RF wireless capacitive flow sensor is developed. The sensor has integrated inductor with the flow sensitive capacitors
as LC circuit. The resonant frequency of the sensor changes as the capacitance changes with applied flow. The sensor
uses LPCVD silicon nitride as sensitive membrane and the residual stress of the membrane has been measure as 139
MPa. The sensor has size of 10 mm × 4 mm × 0.5 μm. The sensor integrated two pressure sensors together and designed
related to flow 5-20ml/hour. The deflection of different shape of membranes and the parameters of flow sensor
sensitivity are discussed. The deflection of square membrane is 130% to circular membrane under same applied
pressure.
The meantime between failures of the thin film strain sensor is a critical indicator for
future U.S. Army field sensing application [1]. This accelerated lifetime aging test would
characterize the existing flexible strain sensor for repeated load response/application. A
typical industrial maximum number of testing cycles used are about 10x106 cycles [2].
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