Low-n absorber is a possible candidate of alternative absorber with high NILS and low dose to size. However, in order to apply the low-n absorber to the high-volume manufacturing, various blank, mask, and lithographic performances should be fulfilled such as EUV reflectivity, availability for the etching/repairing, and durability under the scanner environment/cleaning.
In this report, we will present our readiness for the low-n absorber blanks. Matching between the candidate low-n absorbers and cap materials will also be discussed
EUV blank is a complicated system including substrate, multilayer, cap layer, absorber, and so on. All those structures contribute to the lithographic performances. In this paper, lithographic impacts of cap layer were simulated. By evaluating lithographic performances for both a binary type mask and a phase shift type mask, impact of cap layer thickness was clarified especially for best focus range of PSM. Second, impacts of cap layer recess induced by mask and lithographic processes were evaluated. Bayesian optimization method was applied to optimize lithographic performances efficiently. The results show thinner cap thickness enables to improve dose aware resolution (NILS × Threshold0.5) and its stability. On the other hand, thinner cap thickness may cause worse durability for the processes such as etching and repairing. So balance between lithographic performances and film durability should be considered.
Extreme ultraviolet lithography (EUVL) is a main lithographic technology for cutting-edge node. Also, ArF lithography will continue to be used in conjunction with EUVL for advanced node production. Critical ArF imaging layers require photomasks with tight resolution and "rigid CD and Positional accuracy". Those specifications are tightening due to the narrow process window. The etching process for phase-shifter has to precisely controlled to achieve the targets. . Various pattern density in PSM (Phase-Shifter Mask) shows phase angle variation due to the digging of the Quartz substrate(QZ). In the high transmittance PSM, the error has larger impact on the lithography due to strong phase shift effects. To prevent phase shift error from the target phase angle, QZ etching stop film is considered. It is possible to obtain a high etching selectivity compared with QZ and to apply an aggressive dry etching condition. In order to control in-plane phase angle distribution due to QZ etching during PSM etching, we proposed a novel high transmission etching stop film for ArF lasers.
This paper shows the latest challenges facing mask blank evolution to support leading-edge lithography processes. ArF immersion lithography has been employing multi-pass exposures to exceed the physical diffraction limit. These photomasks demand very accurate overlay, higher NILS and best CD uniformity for wider process window. The subject was considered from two perspectives from a mask blank producer, which are the mask-making perspective and the wafer lithography perspective. To improve the overlay, we introduced the dedicated CDL (Charge Dissipation Layer) for improving mask registration error. From the lithography resolution perspective, we have developed a high-transmittance phase-shifter film for higher NILS. CDU stability point of view, we described “Superior pattern fidelity CAR”, “High ArF durability SiN phase-shifter” and “Transparent etching stopper”. The industry decided to move to EUV lithography. But there are still many challenges for optical lithography.
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