Mr. I-Lin Lu Profile

I-Lin Lu

at National Taiwan Univ

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 12 March 2010 Paper

Role of interface roughness on lateral transport in InGaN/GaN LEDs: diffusion length, dislocation spacing, and radiative efficiency

I-Lin Lu, Yuh-Renn Wu, John Hinckley, Jasprit Singh

Proceedings Volume 7602, 76021H (2010) https://doi.org/10.1117/12.840424

KEYWORDS: Scattering, Diffusion, Quantum wells, Indium, Interfaces, Light emitting diodes, Monte Carlo methods, Internal quantum efficiency, Indium gallium nitride, Electrons

Read Abstract +

In a LED, electrons and holes are injected from the contacts into the quantum wells. The carriers diffuse laterally in the quantum wells. In this letter, we focus on the role of interface roughness, electron-electron scattering, and dislocation scattering in the quantum well on lateral transport and present results on the diffusion length in the lateral direction. The influence of quantum well with different indium compositions, carrier densities, dislocation densities, and interface roughness are studied. A Monte Carlo simulation program is used to study the lateral mobility in quantum well. The effects of alloy scattering, charged dislocation scattering, interface roughness scattering, and e-e scattering have been included in our Monte Carlo model. The results show that the nonradiative lifetime caused by the dislocation trapping is still a dominating role for higher indium composition. This limits the internal quantum efficiency. The large interface roughness caused by a quantum dot like structures and In-clustering effect may help to improve the efficiency by reducing the diffusion length. However, our results show that for the longer wavelength source, we should try to improve the overall internal quantum efficiency first before discussing the droop effect. One is to decrease the radiative lifetime by reducing the QCSE with nonpolar/semipolar structures. The other approach would be to reduce the dislocation density to less than 10⁶cm^-2.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years