Dr. Ian C. Sandall Profile

Dr. Ian C. Sandall

at The Univ of Sheffield

SPIE Involvement:

Author

Publications (5)

Proceedings Article | 31 October 2014 Paper

Demonstration of an InAsBi photodiode operating in the MWIR

Ian Sandall, Faebian Bastiman, Ben White, Robert Richards, John David, Chee Hing Tan

Proceedings Volume 9254, 92540Q (2014) https://doi.org/10.1117/12.2069697

KEYWORDS: Indium arsenide, Bismuth, Photodiodes, Mid-IR, Diodes, Gallium arsenide, Temperature metrology, Indium, Antimony, Surface finishing

Read Abstract +

Proceedings Article | 22 March 2007 Paper

Maximising the gain: optimizing the carrier distribution in InGaAs quantum dot lasers

Peter Smowton, Ian Sandall, David Mowbray, Hui-Yun Liu, Mark Hopkinson

Proceedings Volume 6468, 646817 (2007) https://doi.org/10.1117/12.702733

KEYWORDS: Absorption, Semiconducting wafers, Transparency, Quantum dots, Indium gallium arsenide, Quantum dot lasers, Gallium arsenide, Temperature metrology, Doping, Laser damage threshold

Read Abstract +

Proceedings Article | 8 February 2007 Paper

Recombination in quantum dot ensembles

Peter Blood, Helen Pask, Ian Sandall, Huw Summers

Proceedings Volume 6485, 64850J (2007) https://doi.org/10.1117/12.714264

KEYWORDS: Electrons, Quantum wells, Quantum dots, Excitons, Light emitting diodes, Absorption, Statistical modeling, Data modeling, Physics, Semiconductor lasers

Read Abstract +

Proceedings Article | 22 February 2006 Paper

Characterisation of modulation doped quantum dot lasers

Peter Smowton, Ian Sandall, Craig Walker, John Thomson, Angela Sobiesierski, Tom Badcock, David Mowbray, Hui-Yun Liu, Mark Hopkinson

Proceedings Volume 6133, 61330T (2006) https://doi.org/10.1117/12.650682

KEYWORDS: Doping, Transparency, Absorption, Quantum dots, Modulation, Quantum wells, Laser damage threshold, Gallium, Semiconductor lasers, Gallium arsenide

Read Abstract +

Proceedings Article | 1 April 2005 Paper

Growth and characterization of multiple layer quantum dot lasers

Peter Smowton, Craig Walker, Ian Sandall, Ian Sellers, David Mowbray, Hui-Yun Liu, Marina Gutierrez, Mark Hopkinson

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.593278

KEYWORDS: Gallium arsenide, Absorption, Gallium, Quantum dots, Transmission electron microscopy, Quantum wells, Multilayers, Quantum dot lasers, Laser damage threshold, Semiconductor lasers

Read Abstract +

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years