For the first time, we have experimentally demonstrated an all-silicon polarization-multiplexed IQ modulator targeting 800ZR pluggable transceivers for data-center interconnection. Using realistic DAC, ADC, DSP, and commercially available driver amplifiers, we can achieve an equivalent transmitter output power of -15.74 dBm and an rOSNR of 26.51 dB with oFEC. Furthermore, a superior performance showing a transmitter output power of -13.55 dBm and an rOSNR of 26.6 dB can be achieved by using a future co-packaged driver chip with peaking capability, which is experimentally emulated by an optical spectral shaper. In addition, an optical sub-assembly consisting of co-packaged a SiPho chip and a TIA chip is under sample building and testing. The demonstration paves a way for near-term available 800ZR pluggable transceivers based on silicon photonics.
Herein, we investigate the dissolution behavior of 193-nm chemically amplified resist in different organic solvents at a
mechanistic level. We previously reported the effect of solvent developers on the negative tone development (NTD)
process in both dry and immersion lithography, and demonstrated various resist performance parameters such as
photospeed, critical dimension uniformity, and dissolution rate contrast are strongly affected by chemical nature of the
organic developer. We further pursued the investigation by examining the dependence of resist dissolution behavior on
their solubility properties using Hansen Solubility Parameter (HSP). The effects of monomer structure, and resist
composition, and the effects of different developer chemistry on dissolution behaviors were evaluated by using laser
interferometry and quartz crystal microbalance. We have found that dissolution behaviors of methacrylate based resists
are significantly different in different organic solvent developers such as OSDTM-1000 Developer* and n-butyl acetate
(nBA), affecting their resist performance. This study reveals that understanding the resist dissolution behavior helps to
design robust NTD materials for higher resolution imaging.
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