Mr. Jan Mulkens Profile

Jan Mulkens

Program System Engineer at ASML

SPIE Involvement:

Author

Publications (43)

Proceedings Article | 30 April 2023 Presentation

The edge placement error characterization and optimization for advanced logic and DRAM nodes

Harm Dillen, Wim Tel, Jaap Karssenberg, Jan Mulkens, Roy Anunciado, Yichen Zhang, Konstantin Nechaev, Zuan Khalik

Proceedings Volume 12496, 124960O (2023) https://doi.org/10.1117/12.2658832

KEYWORDS: Overlay metrology, Logic, Optical proximity correction, Metrology, Stochastic processes, Semiconductors, Semiconductor manufacturing, Scanners, Manufacturing, Line edge roughness

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Proceedings Article | 26 May 2022 Presentation + Paper

On-product overlay solutions for DUV and EUV mix-scanner usage in an EPE-driven patterning world

D. Slotboom, P. Hinnen, J. Mulkens

Proceedings Volume 12051, 120510L (2022) https://doi.org/10.1117/12.2614537

KEYWORDS: Scanners, Overlay metrology, Semiconducting wafers, Distortion, Deep ultraviolet, Extreme ultraviolet, Reticles, Optical parametric oscillators

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Proceedings Article | 27 June 2019 Paper

Evaluation of local CD and placement distribution on EUV mask and its impact on wafer

Vidya Vaenkatesan, Paul van Adrichem, Marleen Kooiman, Michael Kubis, Lieve van Look , Andreas Frommhold, Emily Gallagher, DS Nam, Jan Mulkens

Proceedings Volume 11178, 1117807 (2019) https://doi.org/10.1117/12.2538243

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Metrology, Extreme ultraviolet, Stochastic processes

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Proceedings Article | 20 March 2019 Paper

Holistic feedforward control for the 5 nm logic node and beyond

Henry Megens, Ralph Brinkhof, Igor Aarts, Haico Kok, Leendertjan Karssemeijer, Gijs ten Haaf, Shawn Lee, Daan Slotboom, Chris de Ruiter, Irina Lyulina, Simon Huisman, Stefan Keij, Evert Mos, Wim Tel, Manouk Rijpstra, Emil Schmitt-Weaver, Kaustuve Bhattacharyya, Robert Socha, Boris Menchtchikov, Michael Kubis, Jan Mulkens

Proceedings Volume 10961, 109610K (2019) https://doi.org/10.1117/12.2515449

KEYWORDS: Lithographic process control, Semiconducting wafers, Optical alignment, Overlay metrology, Sensors, Distortion, Scanners, Logic, Metrology, Process control

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Proceedings Article | 18 October 2018 Presentation + Paper

E-beam based EUV mask characterization for studying mask induced wafer effects

Vidya Vaenkatesan, Qing Tian, Emily Gallagher, Jim Wiley, Jo Finders, Michael Kubis, Jan Mulkens, Chiyan Kuan, Kevin Gao

Proceedings Volume 10810, 108100U (2018) https://doi.org/10.1117/12.2502588

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Liquid phase epitaxy, Extreme ultraviolet, Metrology, Cadmium sulfide, Nanoimprint lithography, Inspection, Error analysis

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Proceedings Article | 13 March 2018 Presentation + Paper

Holistic approach for overlay and edge placement error to meet the 5nm technology node requirements

Jan Mulkens, Bram Slachter, Michael Kubis, Wim Tel, Paul Hinnen, Mark Maslow, Harm Dillen, Eric Ma, Kevin Chou, Xuedong Liu, Weiming Ren, Xuerang Hu, Fei Wang, Kevin Liu

Proceedings Volume 10585, 105851L (2018) https://doi.org/10.1117/12.2297283

KEYWORDS: Metrology, Overlay metrology, Scanners, Semiconducting wafers, Extreme ultraviolet lithography, Logic, Optical proximity correction, Lithography, Critical dimension metrology, Electron beams

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Proceedings Article | 28 March 2017 Presentation + Paper

Patterning control strategies for minimum edge placement error in logic devices

Jan Mulkens, Michael Hanna, Bram Slachter, Wim Tel, Michael Kubis, Mark Maslow, Chris Spence, Vadim Timoshkov

Proceedings Volume 10145, 1014505 (2017) https://doi.org/10.1117/12.2260155

KEYWORDS: Line edge roughness, Optical proximity correction, Optical lithography, Overlay metrology, Metrology, Lithography, Control systems, Extreme ultraviolet lithography, Extreme ultraviolet, Process control, Logic devices, Immersion lithography, Scanners, Semiconducting wafers, Critical dimension metrology, Line width roughness

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SPIE Journal Paper | 29 March 2016

High-order distortion control using a computational prediction method for device overlay

Young Seog Kang, Cedric Affentauschegg, Jan Mulkens, Jang-Sun Kim, Ju Hee Shin, Young Ha Kim, YoungSun Nam, Young-Sin Choi, Hunhwan Ha, Dong-Han Lee, Jae-il Lee, Umar Rizvi, Bernd Geh, Rob van der Heijden, Jan Baselmans, Oh-Sung Kwon

JM3, Vol. 15, Issue 02, 021403, (March 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021403

KEYWORDS: Overlay metrology, Metrology, Distortion, Control systems, Semiconducting wafers, Scanners, Etching, Information technology, Image processing, Photomasks

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Proceedings Article | 25 March 2016 Paper

Holistic overlay control for multi-patterning process layers at the 10nm and 7nm nodes

Leon Verstappen, Evert Mos, Peter Wardenier, Henry Megens, Emil Schmitt-Weaver, Kaustuve Bhattacharyya, Omer Adam, Grzegorz Grzela, Joost van Heijst, Lotte Willems, Jochem Wildenberg, Velislava Ignatova, Albert Chen, Frank Elich, Bijoy Rajasekharan, Lydia Vergaij-Huizer, Brian Lewis, Marc Kea, Jan Mulkens

Proceedings Volume 9778, 97781Y (2016) https://doi.org/10.1117/12.2230390

KEYWORDS: Process control, Overlay metrology, Process modeling, Semiconducting wafers, Metrology, Scanners, Target detection, Lithium, Optical alignment, Time metrology

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Multi-patterning lithography at the 10-nm and 7-nm nodes is driving the allowed overlay error down to extreme low values. Advanced high order overlay correction schemes are needed to control the process variability. Additionally the increase of the number of split layers results in an exponential increase of metrology complexity of the total overlay and alignment tree. At the same time, the process stack includes more hard-mask steps and becomes more and more complex, with as consequence that the setup and verification of the overlay metrology recipe becomes more critical. All of the above require a holistic approach that addresses total overlay optimization from process design to process setup and control in volume manufacturing. In this paper we will present the holistic overlay control flow designed for 10-nm and 7-nm nodes and illustrate the achievable ultimate overlay performance for a logic and DRAM use case. As figure 1 illustrates we will explain the details of the steps in the holistic flow. Overlay accuracy is the driver for target design and metrology tool optimization like wavelength and polarization. We will show that it is essential to include processing effects like etching and CMP which can result in a physical asymmetry of the bottom grating of diffraction based overlay targets. We will introduce a new method to create a reference overlay map, based on metrology data using multiple wavelengths and polarization settings. A similar approach is developed for the wafer alignment step. The overlay fingerprint correction using linear or high order correction per exposure (CPE) has a large amount of parameters. It is critical to balance the metrology noise with the ultimate correction model and the related metrology sampling scheme. Similar approach is needed for the wafer align step. Both for overlay control as well as alignment we have developed methods which include efficient use of metrology time, available for an in the litho-cluster integrated metrology use. These methods include a novel set models that efficiently describe different process fingerprints. We will explain the methods and show the benefits for logic and DRAM use cases.

Proceedings Article | 15 March 2016 Paper

Ultimate intra-wafer critical dimension uniformity control by using lithography and etch tool corrections

Michael Kubis, Rich Wise, Liesbeth Reijnen, Katja Viatkina, Patrick Jaenen, Melisa Luca, Guillaume Mernier, Charlotte Chahine, David Hellin, Benjamin Kam, Daniel Sobieski, Johan Vertommen, Jan Mulkens, Mircea Dusa, Girish Dixit, Nader Shamma, Philippe Leray

Proceedings Volume 9780, 978007 (2016) https://doi.org/10.1117/12.2220591

KEYWORDS: Critical dimension metrology, Etching, Lithography, Optical lithography, Scanners, Process control, Logic, Scatterometry, Photomasks, Plasma etching, Metrology

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Proceedings Article | 19 March 2015 Paper

Intra-field on-product overlay improvement by application of RegC and TWINSCAN corrections

Ofir Sharoni, Vladimir Dmitriev, Erez Graitzer, Yuval Perets, Kujan Gorhad, Richard van Haren, Hakki Cekli, Jan Mulkens

Proceedings Volume 9424, 94241K (2015) https://doi.org/10.1117/12.2085651

KEYWORDS: Photomasks, Scanners, Semiconducting wafers, Image registration, Reticles, Overlay metrology, Lithium, Distortion, Metrology, Actuators

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The on product overlay specification and Advanced Process Control (APC) is getting extremely challenging particularly after the introduction of multi-patterning applications like Spacer Assisted Double Patterning (SADP) and multipatterning techniques like N-repetitive Litho-Etch steps (LE^N, N ≥ 2). When the latter is considered, most of the intrafield overlay contributors drop out of the overlay budget. This is a direct consequence of the fact that the scanner settings (like dose, illumination settings, etc.) as well as the subsequent processing steps can be made very similar for two consecutive Litho-Etch layers. The major overlay contributor that may require additional attention is the Image Placement Error (IPE). When the inter-layer overlay is considered, controlling the intra-field overlay contribution gets more complicated. In addition to the IPE contribution, the TWINSCAN^TM lens fingerprint in combination with the exposure settings is going to play a role as well. Generally speaking, two subsequent functional layers have different exposure settings. This results in a (non-reticle) additional overlay contribution.

In this paper, we have studied the wafer overlay correction capability by RegC® in addition to the TWINSCAN^TM intrafield corrections to improve the on product overlay performance. RegC® is a reticle intra-volume laser writing technique that causes a predictable deformation element (RegC® deformation element) inside the quartz (Qz) material of a reticle. This technique enables to post-process an existing reticle to correct for instance for IPE. Alternatively, a pre-determined intra-field fingerprint can be added to the reticle such that it results in a straight field after exposure. This second application might be very powerful to correct for instance for (cold) lens fingerprints that cannot be corrected by the scanner itself. Another possible application is the intra-field processing fingerprint. One should realize that a RegC® treatment of a reticle generally results in global distortion of the reticle. This is not a problem as long as these global distortions can be corrected by the TWINSCAN^TM system (currently up to the third order). It is anticipated that the combination of the RegC® and the TWINSCAN^TMcorrections act as complementary solutions. These solutions perfectly fit into the ASML Litho InSight (LIS) product in which feedforward and feedback corrections based on YieldStar overlay measurements are used to improve the on product overlay.

Proceedings Article | 13 March 2015 Paper

Overlay and edge placement control strategies for the 7nm node using EUV and ArF lithography

Jan Mulkens, Michael Hanna, Hannah Wei, Vidya Vaenkatesan, Henry Megens, Daan Slotboom

Proceedings Volume 9422, 94221Q (2015) https://doi.org/10.1117/12.2085761

KEYWORDS: Scanners, Overlay metrology, Extreme ultraviolet lithography, Optical lithography, Semiconducting wafers, Lithography, Metrology, Critical dimension metrology, Extreme ultraviolet, Control systems

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Proceedings Article | 17 April 2014 Paper

Across scanner platform optimization to enable EUV lithography at the 10-nm logic node

Jan Mulkens, Jaap Karssenberg, Hannah Wei, Marcel Beckers, Leon Verstappen, Stephen Hsu, Guangqin Chen

Proceedings Volume 9048, 90481L (2014) https://doi.org/10.1117/12.2048314

KEYWORDS: Scanners, Semiconducting wafers, Extreme ultraviolet lithography, Overlay metrology, Extreme ultraviolet, Optical lithography, Source mask optimization, Lithography, Logic, Actuators

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Proceedings Article | 2 April 2014 Paper

Overlay improvements using a real time machine learning algorithm

Emil Schmitt-Weaver, Michael Kubis, Wolfgang Henke, Daan Slotboom, Tom Hoogenboom, Jan Mulkens, Martyn Coogans, Peter ten Berge, Dick Verkleij, Frank van de Mast

Proceedings Volume 9050, 90501S (2014) https://doi.org/10.1117/12.2046914

KEYWORDS: Overlay metrology, Semiconducting wafers, Machine learning, Metrology, Scanners, Sensors, Control systems, Optical alignment, Time metrology, Neural networks

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SPIE Journal Paper | 7 January 2014

Holistic optimization architecture enabling sub-14-nm projection lithography

Jan Mulkens, Paul Hinnen, Michael Kubis, Alexander Padiy, Jos Benschop

JM3, Vol. 13, Issue 01, 011006, (January 2014) https://doi.org/10.1117/12.10.1117/1.JMM.13.1.011006

KEYWORDS: Semiconducting wafers, Scanners, Overlay metrology, Lithography, Reticles, Metrology, Control systems, Projection lithography, Calibration, Actuators

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Proceedings Article | 12 April 2013 Paper

Integrated scatterometry for tight overlay and CD control to enable 20-nm node wafer manufacturing.

Jos Benschop, Andre Engelen, Hugo Cramer, Michael Kubis, Paul Hinnen, Hans van der Laan, Kaustuve Bhattacharyya, Jan Mulkens

Proceedings Volume 8683, 86830P (2013) https://doi.org/10.1117/12.2011507

KEYWORDS: Overlay metrology, Metrology, Scanners, Sensors, Semiconducting wafers, Yield improvement, Signal processing, Scatterometry, Control systems, Wafer manufacturing

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Proceedings Article | 12 April 2013 Paper

High order field-to-field corrections for imaging and overlay to achieve sub 20-nm lithography requirements

Jan Mulkens, Michael Kubis, Paul Hinnen, Roelof de Graaf, Hans van der Laan, Alexander Padiy, Boris Menchtchikov

Proceedings Volume 8683, 86831J (2013) https://doi.org/10.1117/12.2011550

KEYWORDS: Semiconducting wafers, Scanners, Overlay metrology, Metrology, Lithography, Actuators, Calibration, Reticles, Photomasks, Control systems

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Proceedings Article | 13 March 2012 Paper

Driving imaging and overlay performance to the limits with advanced lithography optimization

Jan Mulkens, Jo Finders, Hans van der Laan, Paul Hinnen, Michael Kubis, Marcel Beems

Proceedings Volume 8326, 83261I (2012) https://doi.org/10.1117/12.916480

KEYWORDS: Semiconducting wafers, Scanners, Overlay metrology, Control systems, Metrology, Optical alignment, Reticles, Actuators, Calibration, Optimization (mathematics)

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Proceedings Article | 5 April 2011 Paper

Solutions for 22-nm node patterning using ArFi technology

Jo Finders, Mircea Dusa, Jan Mulkens, Yu Cao, Maryana Escalante

Proceedings Volume 7973, 79730U (2011) https://doi.org/10.1117/12.881598

KEYWORDS: Semiconducting wafers, Optical proximity correction, Optical lithography, Photomasks, Overlay metrology, Logic, Scanners, Reticles, Lithography, Etching

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Proceedings Article | 23 March 2011 Paper

Advanced wavefront engineering for improved imaging and overlay applications on a 1.35 NA immersion scanner

Frank Staals, Alena Andryzhyieuskaya, Hans Bakker, Marcel Beems, Jo Finders, Thijs Hollink, Jan Mulkens, Angelique Nachtwein, Rob Willekers, Peter Engblom, Toralf Gruner, Youping Zhang

Proceedings Volume 7973, 79731G (2011) https://doi.org/10.1117/12.880759

KEYWORDS: Wavefronts, Photomasks, Scanners, Source mask optimization, Optimization (mathematics), Semiconducting wafers, 3D acquisition, Reticles, Computational lithography, 3D image processing

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Proceedings Article | 4 March 2010 Paper

Advanced imaging with 1.35 NA immersion systems for volume production

Igor Bouchoms, Jan Mulkens, Sander de Putter, Pieter Gunter, Roelof de Graaf, Marcel Beems, Erwin Verdurmen, Hans Jasper, Nils Dieckmann, Frank Bornebroek

Proceedings Volume 7640, 76401R (2010) https://doi.org/10.1117/12.845597

KEYWORDS: Semiconducting wafers, Reticles, Scanners, Control systems, Imaging systems, Critical dimension metrology, Logic, Overlay metrology, Wavefronts, Optical alignment

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Proceedings Article | 16 March 2009 Paper

Extending single-exposure patterning towards 38-nm half-pitch using 1.35 NA immersion

Igor Bouchoms, Andre Engelen, Jan Mulkens, Herman Boom, Richard Moerman, Paul Liebregts, Roelof de Graaf, Marieke van Veen, Patrick Thomassen, Wolfgang Emer, Frank Sperling

Proceedings Volume 7274, 72741K (2009) https://doi.org/10.1117/12.813649

KEYWORDS: Semiconducting wafers, Imaging systems, Polarization, Optical lithography, Control systems, Critical dimension metrology, Printing, Thin film coatings, Immersion lithography, Lithography

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Proceedings Article | 7 March 2008 Paper

Latest developments on immersion exposure systems

Jan Mulkens, Jos de Klerk, Martijn Leenders, Fred de Jong, Jan Cromwijk

Proceedings Volume 6924, 69241P (2008) https://doi.org/10.1117/12.774958

KEYWORDS: Semiconducting wafers, Double patterning technology, Overlay metrology, Focus stacking software, Lithography, Manufacturing, Monochromatic aberrations, Polarization, Immersion lithography, Combined lens-mirror systems

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Proceedings Article | 7 March 2008 Paper

High-n immersion lithography

Harry Sewell, Jan Mulkens, Paul Graeupner, Diane McCafferty, Louis Markoya, Sjoerd Donders, Rogier Cortie, Ralph Meijers, Fabrizio Evangelista, Nandarisi Samarakone

Proceedings Volume 6924, 692415 (2008) https://doi.org/10.1117/12.773071

KEYWORDS: Semiconducting wafers, Water, Contamination, Absorption, Microfluidics, Immersion lithography, Transparency, Optical components, Ultraviolet radiation, Pulsed laser operation

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Proceedings Article | 27 March 2007 Paper

Extending immersion lithography with high-index materials: results of a feasibility study

Harry Sewell, Jan Mulkens, Paul Graeupner, Diane McCafferty, Louis Markoya, Sjoerd Donders, Nandasiri Samarakone, Rudiger Duesing

Proceedings Volume 6520, 65201M (2007) https://doi.org/10.1117/12.711139

KEYWORDS: Microfluidics, Absorption, Semiconducting wafers, Neodymium, Water, Immersion lithography, Refractive index, Critical dimension metrology, Glasses, Contamination

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Proceedings Article | 19 March 2007 Paper

Defects, overlay, and focus performance improvements with five generations of immersion exposure systems

Jan Mulkens, Bob Streefkerk, Hans Jasper, Jos de Klerk, Fred de Jong, Leon Levasier, Martijn Leenders

Proceedings Volume 6520, 652005 (2007) https://doi.org/10.1117/12.713577

KEYWORDS: Semiconducting wafers, Particles, Signal attenuation, Scanners, Bridges, Thin film coatings, Molecular bridges, Photoresist processing, Control systems, Curtains

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Proceedings Article | 15 March 2006 Paper

A dive into clear water: immersion defect capabilities

B. Streefkerk, J. Mulkens, R. Moerman, M. Stavenga, J. van der Hoeven, C. Grouwstra, R. Bruls, M. Leenders, S. Wang, Y. van Dommelen, M. Boerema, H. Jansen, K. Cummings, M. Riepen, H. Boom, M. Suddendorf, P. Huisman

Proceedings Volume 6154, 61540S (2006) https://doi.org/10.1117/12.660376

KEYWORDS: Particles, Thin film coatings, Semiconducting wafers, Scanners, Curtains, Photoresist processing, Scanning electron microscopy, Immersion lithography, Lithography, Manufacturing

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Proceedings Article | 15 March 2006 Paper

The next phase for immersion lithography

Harry Sewell, Jan Mulkens, Diane McCafferty, Louis Markoya, Bob Streefkerk, Paul Graeupner

Proceedings Volume 6154, 615406 (2006) https://doi.org/10.1117/12.657574

KEYWORDS: Semiconducting wafers, Neodymium, Refractive index, Water, Immersion lithography, Microfluidics, Optical lithography, Critical dimension metrology, Absorption, Glasses

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Proceedings Article | 15 March 2006 Paper

Immersion lithography with an ultrahigh-NA in-line catadioptric lens and a high-transmission flexible polarization illumination system

Hans Jasper, Theo Modderman, Mark van de Kerkhof, Christian Wagner, Jan Mulkens, Wim de Boeij, Eelco van Setten, Bernhard Kneer

Proceedings Volume 6154, 61541W (2006) https://doi.org/10.1117/12.657558

KEYWORDS: Polarization, Combined lens-mirror systems, Semiconducting wafers, Curtains, Lens design, Lithographic illumination, Fiber optic illuminators, Lithography, Mirrors, Imaging systems

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Proceedings Article | 12 May 2005 Paper

Imaging enhancements by polarized illumination: theory and experimental verification

Carsten Kohler, Wim de Boeij, Koen van Ingen-Schenau, Mark van de Kerkhof, Jos de Klerk, Haico Kok, Geert Swinkels, Jo Finders, Jan Mulkens, Damian Fiolka, Tilmann Heil

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599626

KEYWORDS: Polarization, Photomasks, Critical dimension metrology, Imaging systems, Semiconducting wafers, Line edge roughness, Fiber optic illuminators, Electroluminescence, Lithographic illumination, Reticles

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Proceedings Article | 12 May 2005 Paper

Immersion lithography exposure systems: today's capabilities and tomorrow’s expectations

Jan Mulkens, Bob Streefkerk, Martin Hoogendorp, Richard Moerman, Martijn Leenders, Fred de Jong, Marco Stavenga, Herman Boom

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.606799

KEYWORDS: Semiconducting wafers, Immersion lithography, Lenses, Lithography, Manufacturing, Water, SRAF, Overlay metrology, Distortion, Lens design

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Proceedings Article | 27 January 2005 Paper

ArF immersion lithography using TWINSCAN technology

Jan Mulkens, Bob Streefkerk, Martin Hoogendorp

Proceedings Volume 5645, (2005) https://doi.org/10.1117/12.578071

KEYWORDS: Semiconducting wafers, Imaging systems, Immersion lithography, Optical alignment, Lithography, Water, Sensors, Metals, Prototyping, Optical lithography

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Proceedings Article | 28 May 2004 Paper

Extending optical lithography with immersion

Bob Streefkerk, Jan Baselmans, Wendy Gehoel-van Ansem, Jan Mulkens, Chris Hoogendam, Martin Hoogendorp, Donis Flagello, Harry Sewell, Paul Graupner

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.534009

KEYWORDS: Semiconducting wafers, Immersion lithography, Prototyping, Microfluidics, Optical lithography, Wafer-level optics, Image sensors, Imaging systems, Lithography, Scanners

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Proceedings Article | 28 May 2004 Open Access

Optical lithography in the sub-50-nm regime

Donis Flagello, Bill Arnold, Steve Hansen, Mircea Dusa, Robert Socha, Jan Mulkens, Reiner Garreis

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535432

KEYWORDS: Polarization, Reticles, Photoresist materials, Photomasks, Chromium, Optical lithography, Semiconducting wafers, Sodium, Resolution enhancement technologies, Lithography

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Proceedings Article | 28 May 2004 Paper

Optical lithography with 157-nm technology

Theo Modderman, Hans Jasper, Herman Boom, Tammo Uitterdijk, Stephane Dana, Harry Sewell, Timothy O'Neil, Jan Mulkens, Martin Brunotte, Birgit Mecking, Toralf Gruner

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535101

KEYWORDS: Reticles, Pellicles, Lithography, Chemical elements, Oxygen, Contamination, Optical lithography, Scanners, Distortion, Surface finishing

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SPIE Journal Paper | 1 January 2004

Benefits and limitations of immersion lithography

Jan Mulkens, Donis Flagello, Bob Streefkerk, Paul Gräupner

JM3, Vol. 3, Issue 01, (January 2004) https://doi.org/10.1117/12.10.1117/1.1636768

KEYWORDS: Photoresist materials, Semiconducting wafers, Water, Liquids, Polarization, Immersion lithography, Lithography, Fluid dynamics, Microfluidics, Refractive index

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Proceedings Article | 26 June 2003 Paper

Optical lithography solutions for sub-65-nm semiconductor devices

Jan Mulkens, James McClay, Bruce Tirri, Martin Brunotte, Birgit Mecking, Hans Jasper

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485382

KEYWORDS: Pellicles, Birefringence, Lithography, Imaging systems, Oxygen, Critical dimension metrology, Overlay metrology, Combined lens-mirror systems, Optical lithography, Semiconducting wafers

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Proceedings Article | 30 July 2002 Paper

157-nm technology: Where are we today?

Jan Mulkens, Thomas Fahey, James McClay, Judon Stoeldraijer, Patrick Wong, Martin Brunotte, Birgit Mecking

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474610

KEYWORDS: Pellicles, Lithography, Reticles, Photomasks, Contamination, Crystals, Lens design, Birefringence, Silica, Distortion

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Proceedings Article | 5 July 2000 Paper

Advanced technology for extending optical lithography

Christian Wagner, Winfried Kaiser, Jan Mulkens, Donis Flagello

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389046

KEYWORDS: Photomasks, Optical lithography, Polarization, Semiconducting wafers, Silica, Lithography, Laser optics, Standards development, Lens design, Scanners

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Proceedings Article | 5 July 2000 Paper

Optical lithography into the millennium: sensitivity to aberrations, vibration, and polarization

Donis Flagello, Jan Mulkens, Christian Wagner

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388983

KEYWORDS: Polarization, Photoresist materials, Modulation, Image resolution, Lithography, Optical lithography, Manufacturing, Monte Carlo methods, Photomasks, Reticles

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Proceedings Article | 30 December 1999 Paper

Challenges and opportunities for 157-nm mask technology

Jan Mulkens, Christian Wagner, Kevin Cummings, Richard George

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373333

KEYWORDS: Photomasks, Reticles, Lithography, Reflectivity, Silica, Absorption, Semiconducting wafers, Reflection, Pellicles, Contamination

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Proceedings Article | 26 July 1999 Paper

ArF step-and-scan exposure system for 0.15-um and 0.13-um technology nodes

Jan Mulkens, Judon Stoeldraijer, Guy Davies, Marcel Dierichs, Barbra Heskamp, Marco Moers, Richard George, Oliver Roempp, Holger Glatzel, Christian Wagner, Ingrid Pollers, Patrick Jaenen

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354362

KEYWORDS: Semiconducting wafers, Reticles, Lithography, Imaging systems, Photomasks, Overlay metrology, Scanning electron microscopy, Photoresist processing, Monochromatic aberrations, Distortion

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Proceedings Article | 7 June 1996 Paper

Photolithography using the AERIAL illuminator in a variable-NA wafer stepper

Richard Rogoff, Guy Davies, Jan Mulkens, Jos de Klerk, Peter van Oorschot, Gabriele Kalmbach, Johannes Wangler, Wolfgang Rupp

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240954

KEYWORDS: Semiconducting wafers, Fiber optic illuminators, Scanning electron microscopy, Silicon, Photoresist materials, Oxides, Lithography, Reticles, Diffractive optical elements, Optical lithography

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Showing 5 of 43 publications

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