Dr. Jorge A. Holguín-Lerma Profile

Dr. Jorge A. Holguín-Lerma

Research Engineer/Scientist

SPIE Involvement:

Author | Career Lab Leader

Publications (4)

SPIE Journal Paper | 2 July 2020

Prism-based tunable InGaN/GaN self-injection locked blue laser diode system: study of temperature, injection ratio, and stability

Mohammed Z. M. Khan, Sani Mukhtar, Jorge Holguín-Lerma, Omar Alkhazragi, Islam Ashry, Tien K. Ng, Boon Ooi

JNP, Vol. 14, Issue 03, 036001, (July 2020) https://doi.org/10.1117/12.10.1117/1.JNP.14.036001

KEYWORDS: Lawrencium, Semiconductor lasers, Laser systems engineering, Prisms, Infrared imaging, Wavelength tuning, Temperature metrology, Tunable lasers, Diffraction gratings

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Proceedings Article | 31 March 2020 Presentation

Off-the-shelf laser diodes with narrow-line emission at visible wavelengths by integration of distributed feedback (DFB) surface grating (Conference Presentation)

Jorge Holguín-Lerma, Tien Khee Ng, Boon Ooi

Proceedings Volume 11301, 1130104 (2020) https://doi.org/10.1117/12.2543842

KEYWORDS: Semiconductor lasers, Optical communications, Refractive index, Laser development, Laser based displays, Optical sensing, Laser applications, Laser sources, Optical design, Waveguide lasers

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Proceedings Article | 31 January 2020 Paper

3.8-Gbit/s visible light communication (VLC) based on 443-nm superluminescent diode and bit-loading discrete-multiple-tone (DMT) modulation scheme

Fangchen Hu, Jorge Holguin-Lerma, Yuan Mao, Chao Shen, Xiaobin Sun, Meiwei Kong, Tien Khee Ng, Boon Ooi, Nan Chi

Proceedings Volume 11307, 113070H (2020) https://doi.org/10.1117/12.2543983

KEYWORDS: Modulation, Telecommunications, Quadrature amplitude modulation, Visible radiation, Superluminescent diodes, Light sources and illumination, Semiconductor lasers, Continuous wave operation, Electroluminescence, Optical communications, Gallium nitride

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SPIE Journal Paper | 5 July 2018 Open Access

Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices

Mohd Sharizal Alias, Malleswararao Tangi, Jorge A. Holguín-Lerma, Edgars Stegenburgs, Abdullah A. Alatawi, Islam Ashry, Ram Chandra Subedi, Davide Priante, Mohammad Khaled Shakfa, Tien Khee Ng, Boon S. Ooi

JNP, Vol. 12, Issue 04, 043508, (July 2018) https://doi.org/10.1117/12.10.1117/1.JNP.12.043508

KEYWORDS: Gallium nitride, Light emitting diodes, Nanophotonics, Nanostructures, Aluminum, Aluminum nitride, Ultraviolet radiation, Scanning electron microscopy, External quantum efficiency, Silicon

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