Antimonide high-power semiconductor laser diodes emitting at 2μm have broad prospects in many fields, such as tunable diode laser absorption spectroscopy. However, power is an important indicator for the application of antimonide semiconductor laser diodes. In this paper, we reported the high-power antimony laser diodes emitting around 2μm achieved in our group. The maximum optical power is 1.001W with injected current 3.04A at working temperature 20℃.
As one of the primary products in the field of semiconductor lasers, GaAs-based semiconductor laser devices with an 808nm wavelength are widely applied in various industries such as industrial, medical, and scientific research. These devices possess substantial market potential. This paper reports on the development of a high-power array semiconductor laser device emitting at 808nm wavelength, achieved by our research team. At a temperature of 25°C, with a filling factor of 30% and an injection current of 50A, the maximum output power reaches 55.31W, and the photoelectric conversion efficiency is 58.74%. This device demonstrates exceptional emission performance.
KEYWORDS: Semiconductor lasers, Antimony, High power lasers, Semiconducting wafers, Epitaxy, Scanning electron microscopy, Quantum technologies, Quantum numbers, Fabrication, Windows
Antimony laser diodes emitting at 2 μm have shown great potential due to the extraordinary performance in gas detecting and other promising fields. However, it is difficult to increase the power of antimony laser diodes, the applications of which would be restricted greatly. In this paper, we report the watt-level antimony laser diodes emitting at 2 μm developed by our group, and the maximum output power can achieve about 1.082W at 20℃ with the injection current set as 5A, showing excellent performance.
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