Hybrid photonic devices, harnessing the advantages of multiple materials while mitigating their respective weaknesses, represent a promising solution to the effective on-chip integration of generation and manipulation of non-classical states of light encoding quantum information. We demonstrate a hybrid III-V/Silicon quantum photonic device combining the strong second-order nonlinearity and compliance with electrical pumping of the III-V semiconductor platform with the high maturity and CMOS compatibility of the silicon photonic platform. Our device embeds the Spontaneous Parametric Down-Conversion (SPDC) of photon pairs into an AlGaAs source and their subsequent routing to a silicon-on-insulator circuitry. This enables the on-chip generation of broadband telecom photon pairs by type zero and type two SPDC from the hybrid device, at room temperature and with strong rejection of the pump beam. Two-photon interference with 92% visibility proves the high energy-time entanglement quality characterizing the produced quantum state, thereby enabling a wide range of quantum information applications.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.