We report on Quantum Photonic Imager (QPI) device, which is comprised of a spatial array of digitally addressable multicolor micro-scale pixels, wherein each pixel is a vertical stack of Red, Green, Blue light emitting diodes (LEDs) with RGB light emission sharing the same optical aperture. Starting with Blue, Green and Red epi-wafers first processed to create any desired size micro-LED arrays with 5-10 μm pixel pitch (pixelated), each of the 3 processed epi-wafers are sequentially bonded to a single receiving handle wafer followed by substrate removal and backside process to create a handle wafer with Blue, Green and Red micro-LED pixel arrays stacked vertically on top of each other. The handle wafer, which encapsulates stacked RGB pixel array, is also monolithically pre-processed to incorporate micro-scale pixel level optical elements array that is designed to collimate and directionally modulate the multi-color light emitted from the individual pixels of the LED array. A proprietary CMOS image processor is then bonded to the handle wafer combining the vertically stacked arrays of micro-scale pixel-level optics and LEDs. The QPI device alleviates inefficiencies associated with spatially or temporally multiplexed color pixel architectures, enabling high pixel density leading to small form-factor display system design. Low power display system operation is enabled by the QPI device. Small form-factor multi-color “wearable” AR displays with sub-1W power consumption utilizing QPI optically coupled to the edge of the AR combining lens have been demonstrated. Additionally, QPI enabled compact light field displays, head-up displays and pico projectors have also been demonstrated.
GaN based micro emitter optoelectronic device array has been proved to be the core
component for wide variety of applications such as microdisplay, biosensor, projection etc.
Etching is one of the key steps to form the GaN micro emitter array device, including inductively
coupled plasma (ICP) dry etch and alkaline solution wet etch. This paper reports the recent
progress made by Ostendo Technologies Inc in fabricating the ultra-high density, large aspect-ratio
etching formed monolithic GaN micro emitter optoelectronic device array. The unit density
reaches 1M per cm2, with good uniformity across the whole wafer. Perpendicular etching sidewall
was achieved, with smooth surface roughness which is significance feature used for laser diodes
(LDs) device.
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