Partially strained Si1-xGex epilayers with germanium composition up to 25% have been studied by room temperature photoreflectance spectroscopy. Observed transitions were identified as E1 and E0' direct transitions at Si1-xGex structure. The E1 transition energy dependence on alloy composition shows that the studied Si1-xGex epilayers are partially relaxed and the degree of relaxation differ from one structure to another. For the germanium content close to 10% the crossing between E1 and E0' optical transitions was observed.
We present fundamentals and representative examples of fast non-contact full wafer characterization of oxide and silicon defects induced by plasma and thermal processing steps. Parametric and distribution results are obtained using the recently introduced 'COCOS' and surface doping methodologies that enhance contact potential difference and surface photovoltage methods. The measured parameters include flatband voltage, interface trap density, soft breakdown, oxide surface potential and recovery lifetime. We studied the effects of plasma metal etching and ashing, thermal oxidation, anneal ambients and nitridation methods.
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