Prof. Kuen-Yu Tsai Profile

Prof. Kuen-Yu Tsai

Associate Professor at National Taiwan Univ

SPIE Involvement:

Author

Area of Expertise:

Nanolithography processes, equipment, and software , Design for manufacturability and variability of nanometer IC , Nanoscale detection and servo systems , Multiobjective robust optimal control , System identification , Convex optimization and its engineering applications

Websites:

Company Website

Publications (39)

Proceedings Article | 12 November 2024 Poster + Paper

Poster + Paper

The effect of TiO2 film on the surface roughness and optical properties of Mo/Si periodic films by atomic layer deposition

Chao-Te Lee, Wen-Hao Cho, Wei-Chun Chen, Bor-Yuan Shew, Hung-Pin Chen, Cheng-Chung Jaing, Chien-Lin Lee, Kuen-Yu Tsai

Proceedings Volume 13215, 132150S (2024) https://doi.org/10.1117/12.3032256

KEYWORDS: Reflectivity, Extreme ultraviolet, Atomic layer deposition, Film thickness, Mirrors, Surface roughness, Optical properties, Spectroscopy, Silicon, Titanium dioxide

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Proceedings Article | 10 April 2024 Presentation + Paper

Presentation + Paper

A transistor sizing method for standard-cell optimization considering lithography effects

Jia-Syun Cai, Pin-Yuan Su, Chien-Lin Lee, Kuen-Yu Tsai

Proceedings Volume 12954, 129540C (2024) https://doi.org/10.1117/12.3012028

KEYWORDS: Transistors, Lithography, Optical proximity correction, Semiconducting wafers, Device simulation, Design rules, Field effect transistors, Extreme ultraviolet lithography

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Proceedings Article | 30 April 2023 Presentation

Presentation

An improved transistor sizing method for standard-cell optimization

Pin-Yuan Su, Jia-Syun Cai, Chien-Lin Lee, Kuen-Yu Tsai

Proceedings Volume 12495, 1249512 (2023) https://doi.org/10.1117/12.2658706

KEYWORDS: Transistors, Standards development

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SPIE Journal Paper | 29 July 2021

Investigation on helium ion beam lithography with proximity effect correction

Chien-Lin Lee, Sheng-Wei Chien, Kuen-Yu Tsai, Chun-Hung Liu

JM3, Vol. 20, Issue 03, 033201, (July 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.3.033201

KEYWORDS: Point spread functions, Helium, Ion beam lithography, Process modeling, Optical lithography, Modulation, Scattering, Laser scattering, Electron beam lithography, Photoresist processing

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SPIE Journal Paper | 10 July 2021

Efficient electrical characteristics estimation techniques for sub-20-nm FDSOI integrated circuits with nonrectangular gate patterning effects

Jia-Syun Cai, Sheng-Wei Chien, Xin-Yang Zheng, Chien-Lin Lee, Kuen-Yu Tsai

JM3, Vol. 20, Issue 03, 033401, (July 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.3.033401

KEYWORDS: TCAD, Transistors, Device simulation, 3D modeling, Integrated circuits, Instrument modeling, Lithography, Error analysis, Logic, Doping

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SPIE Journal Paper | 27 April 2021

Precision fabrication of EUVL programmed defects with helium ion beam patterning

Chien-Lin Lee, Jia-Syun Cai, Sheng-Wei Chien, Kuen-Yu Tsai, Jia-Han Li, Chao-Te Lee

JM3, Vol. 20, Issue 02, 023001, (April 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.2.023001

KEYWORDS: Optical lithography, Palladium, Helium, Ion beams, Direct write lithography, Metrology, Extreme ultraviolet lithography, Lithography, Silicon, Glasses

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Proceedings Article | 1 October 2019 Paper

Paper

Precision fabrication of EUVL programmed defects with helium ion beam lithography

Chien-Lin Lee, Jia-Syun Cai, Sheng-Wei Chien, Kuen-Yu Tsai

Proceedings Volume 11147, 111471J (2019) https://doi.org/10.1117/12.2536874

KEYWORDS: Metrology, Optical lithography, Helium, Extreme ultraviolet lithography, Lithography, Ion beam lithography

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Proceedings Article | 20 March 2019 Presentation + Paper

Presentation + Paper

Accuracy improvement of electrical characteristics estimation for sub-20nm FDSOI devices with non-rectangular gates

Jia-Syun Cai, Sheng-Wei Chien, Xin-Yang Zheng, Chien-Lin Lee, Kuen-Yu Tsai

Proceedings Volume 10962, 109620I (2019) https://doi.org/10.1117/12.2515186

KEYWORDS: TCAD, Transistors, Device simulation, Extreme ultraviolet lithography, Lithography

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Proceedings Article | 20 March 2019 Presentation + Paper

Presentation + Paper

Investigation on MBOPC convergence improvement with location-dependent correction factors aided by machine learning

Sheng-Wei Chien, Jia-Syun Cai, Chien-Lin Lee, Kuen-Yu Tsai, James Shiely, Matt St. John

Proceedings Volume 10961, 1096107 (2019) https://doi.org/10.1117/12.2515414

KEYWORDS: Optical proximity correction, Lithography, Photomasks, Machine learning, Computational lithography

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Proceedings Article | 19 March 2018 Paper

Paper

Model-based proximity effect correction for helium ion beam lithography

Chien-Lin Lee, Sheng-Wei Chien, Kuen-Yu Tsai

Proceedings Volume 10584, 105841C (2018) https://doi.org/10.1117/12.2297691

KEYWORDS: Point spread functions, Process modeling, Helium, Modulation, Scattering, Model-based design, Ion beam lithography

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Proceedings Article | 28 March 2017 Presentation + Paper

Presentation + Paper

Fabrication of metrology test structures with helium ion beam direct write

Chien-Lin Lee, Sheng-Wei Chien, Sheng-Yung Chen, Chun-Hung Liu, Kuen-Yu Tsai, Jia-Han Li, Bor-Yuan Shew, Chit-Sung Hong, Chao-Te Lee

Proceedings Volume 10145, 1014519 (2017) https://doi.org/10.1117/12.2257989

KEYWORDS: Metrology, Electron beam lithography, Lithography, Helium, Ion beams, Critical dimension metrology, Inspection, Photoresist processing, Optical lithography, Bridges

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Proceedings Article | 2 April 2014 Paper

Paper

Direct-scatterometry-enabled PEC model calibration with two-dimensional layouts

Yi-Yeh Yang, Hsuan-Ping Lee, Chun-Hung Liu, Hao-Yun Yu, Kuen-Yu Tsai, Jia-Han Li

Proceedings Volume 9050, 905032 (2014) https://doi.org/10.1117/12.2048683

KEYWORDS: Calibration, Lithography, Scatterometry, Semiconducting wafers, Light scattering, 3D modeling, Diffraction, Scattering, Photoresist processing, Process control

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Proceedings Article | 28 March 2014 Paper

Paper

Improvement in electron-beam lithography throughput by exploiting relaxed patterning fidelity requirements with directed self-assembly

Hao Yun Yu, Chun-Hung Liu, Yu Tian Shen, Hsuan-Ping Lee, Kuen Yu Tsai

Proceedings Volume 9049, 90492C (2014) https://doi.org/10.1117/12.2046615

KEYWORDS: Line edge roughness, Critical dimension metrology, Electron beam lithography, Lithography, Optical lithography, Transistors, Electrons, Semiconducting wafers, Tolerancing, Directed self assembly

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SPIE Journal Paper | 6 December 2013

Void-based photonic crystal mirror with high reflectivity and low dissipation for extreme-ultraviolet radiation

Yen-Min Lee, Jia-Han Li, Kuen-Yu Tsai

JM3, Vol. 12, Issue 04, 043005, (December 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.4.043005

KEYWORDS: Silicon, Reflectivity, Molybdenum, Mirrors, Absorption, Extreme ultraviolet, Photonic crystals, Chromium, Lithium, Extreme ultraviolet lithography

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Proceedings Article | 18 April 2013 Paper

Paper

Direct-scatterometry-enabled optical-proximity-correction-model calibration

Chih-Yu Chen, Philip C. W. Ng, Chun-Hung Liu, Yu-Tian Shen, Kuen-Yu Tsai, Jia-Han Li, Jason Shieh, Alek Chen

Proceedings Volume 8681, 86810U (2013) https://doi.org/10.1117/12.2009064

KEYWORDS: Calibration, Lithography, Optical proximity correction, Data modeling, Signal processing, Scatterometry, Process control, Photomasks, Process modeling, Systems modeling

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SPIE Journal Paper | 22 August 2012

New method of optimizing writing parameters in electron beam lithography systems for throughput improvement considering patterning fidelity constraints

Hoi-Tou Ng, Yu-Tian Shen, Sheng-Yung Chen, Chun-Hung Liu, Philip Ng, Kuen-Yu Tsai

JM3, Vol. 11, Issue 3, 033007, (August 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.3.033007

KEYWORDS: Electron beam lithography, Monte Carlo methods, Line edge roughness, Computer simulations, Critical dimension metrology, Transistors, Optical simulations, Diffusion, Optimization (mathematics), Point spread functions

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Proceedings Article | 5 April 2012 Paper

Paper

Electron-beam proximity effect model calibration for fabricating scatterometry calibration samples

Yu-Tian Shen, Chun-Hung Liu, Chih-Yu Chen, Hoi-Tou Ng, Kuen-Yu Tsai, Fu-Ming Wang, Chieh-Hsiung Kuan, Yen-Min Lee, Hsin-Hung Cheng, Jia-Han Li, Alek Chen

Proceedings Volume 8324, 83242K (2012) https://doi.org/10.1117/12.918109

KEYWORDS: Calibration, Line edge roughness, Scatterometry, Point spread functions, Process modeling, Scanning electron microscopy, Metrology, Scattering, Semiconducting wafers, Cadmium

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Proceedings Article | 5 April 2012 Paper

Paper

Direct-scatterometry-enabled lithography model calibration

Chih-Yu Chen, Kuen-Yu Tsai, Yu-Tian Shen, Yen-Min Lee, Jia-Han Li, Jason Shieh, Alek Chen

Proceedings Volume 8324, 83241R (2012) https://doi.org/10.1117/12.917516

KEYWORDS: Lithography, Diffraction, Calibration, Scatterometry, Process modeling, Metrology, Diffraction gratings, Image processing, Data modeling, Scatter measurement

Read Abstract +

Optical scatterometry is crucial to advanced nodes due to its ability of non-destructively and rapidly retrieving accurate 3D profile information.^{1, 2, 3} In recent years, an angle-resolved polarized reflectometry-based scatterometry which can measure critical dimensions, overlay, and focus in single shot has been developed.^{4, 6, 20} In principle, a microscope objective collects diffracted light, and pupil images are collected by a detector. For its application of calibrating lithography models, the pupil images are fit to a database pre-characterized usually by rigorous electromagnetic simulation to estimate dimensional parameters of developed resist profiles.⁵ The estimated dimensional parameters can then be used for lithography model calibration. In this work, we propose a new method which directly utilizes the pupil images to calibrate lithography models without needing dimensional parameter estimation. To test its feasibility and effectiveness by numerical simulation, a reference lithography process model is first constructed with a set of parameter values complying with ITRS. A to-be-calibrated process model is initialized with a different set of parameter values from those of the reference model. Rigorous electromagnetic simulation is used to obtain the pupil images of the developed resist profiles predicted by both process models. An optimization algorithm iteratively reduces the difference between the pupil images by adjusting the set of parameter values of the to-be-calibrated process model until the pupil image difference satisfies a predefined converging criterion. This method can be used to calibrate both rigorous first-principle models for process and equipment development and monitoring, and fast kernel-based models for full-chip proximity effect simulation and correction. Preliminary studies with both 1D and 2D aperiodic and periodic layouts indicate that when the pupil image difference is minimized, the lithography model can be accurately calibrated.

SPIE Journal Paper | 13 March 2012

New parametric point spread function calibration methodology for improving the accuracy of patterning prediction in electron-beam lithography

Chun-Hung Liu, Hoi-Tou Ng, Kuen-Yu Tsai

JM3, Vol. 11, Issue 1, 013009, (March 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.1.013009

KEYWORDS: Point spread functions, Calibration, Optical lithography, Lithography, Photoresist processing, Optical simulations, Electron beam lithography, Tolerancing, Scattering, Critical dimension metrology

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SPIE Journal Paper | 1 October 2011

Errata: Non-delta-chrome optical proximity correction methodology for process models with three-dimensional mask effects

Kuen-Yu Tsai, Lawrence Melvin, Philip Ng

JM3, Vol. 10, Issue 04, 049801, (October 2011) https://doi.org/10.1117/12.10.1117/1.3647513

SPIE Journal Paper | 1 July 2011

Non-delta-chrome optical proximity correction methodology for process models with three-dimensional mask effects

Philip Ng, Kuen-Yu Tsai, Lawrence Melvin

JM3, Vol. 10, Issue 03, 033010, (July 2011) https://doi.org/10.1117/12.10.1117/1.3616043

KEYWORDS: Process modeling, Photomasks, Optical proximity correction, 3D modeling, Model-based design, Image processing, Image segmentation, 3D image processing, Data modeling, Computer simulations

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SPIE Journal Paper | 1 April 2011

Errata: Fully model-based methodology for simultaneous correction of extreme ultraviolet mask shadowing and proximity effects

Kuen-Yu Tsai, Yen-Min Lee, Alek Chen, Philip Ng, Fu-Min Wang, Jia-Han Li

JM3, Vol. 10, Issue 02, 029801, (April 2011) https://doi.org/10.1117/12.10.1117/1.3576188

SPIE Journal Paper | 1 January 2011

Fully model-based methodology for simultaneous correction of extreme ultraviolet mask shadowing and proximity effects

Philip Ng, Kuen-Yu Tsai, Yen-Min Lee, Fu-Min Wang, Jia-Han Li, Alek Chen

JM3, Vol. 10, Issue 1, 013004, (January 2011) https://doi.org/10.1117/12.10.1117/1.3533222

KEYWORDS: Photomasks, Model-based design, 3D modeling, Extreme ultraviolet, Optical proximity correction, Process modeling, Computer simulations, Projection lithography, Scanners, Extreme ultraviolet lithography

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SPIE Journal Paper | 1 October 2010

Efficient scattering simulations for equivalent extreme ultraviolet mask multilayer structures by modified transmission line theory and finite-difference time-domain method

Yen-Min Lee, Jia-Han Li, Philip Ng, Ting-Hang Pei, Fu-Min Wang, Kuen-Yu Tsai, Alek Chen

JM3, Vol. 9, Issue 04, 043003, (October 2010) https://doi.org/10.1117/12.10.1117/1.3503532

KEYWORDS: Extreme ultraviolet, Finite-difference time-domain method, Reflectivity, Refractive index, Scattering, Computer simulations, Silicon, Photomasks, Molybdenum, Surface roughness

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Proceedings Article | 3 April 2010 Paper

Paper

Architecture for next-generation massively parallel maskless lithography system (MPML2)

Ming-Shing Su, Kuen-Yu Tsai, Yi-Chang Lu, Yu-Hsuan Kuo, Ting-Hang Pei, Jia-Yush Yen

Proceedings Volume 7637, 76371Q (2010) https://doi.org/10.1117/12.846444

KEYWORDS: Semiconducting wafers, Maskless lithography, Lithography, Photomasks, Data processing, Manufacturing, Electron beams, Data centers, Lenses, Microelectromechanical systems

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Proceedings Article | 3 April 2010 Paper

Paper

Model-based proximity effect correction for electron-beam direct-write lithography

Chun-Hung Liu, Pei-Lin Tien, Philip C. Ng, Yu-Tian Shen, Kuen-Yu Tsai

Proceedings Volume 7637, 76371V (2010) https://doi.org/10.1117/12.846706

KEYWORDS: Process modeling, Photoresist processing, Modulation, Scattering, Model-based design, Semiconducting wafers, Lithography, Electron beams, Electron beam direct write lithography, Laser scattering

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Proceedings Article | 23 March 2010 Paper

Paper

Stochastic simulation of photon scattering for EUV mask defect inspection

Ting-Hang Pei, Kuen-Yu Tsai, Jia-Han Li

Proceedings Volume 7636, 763624 (2010) https://doi.org/10.1117/12.846695

KEYWORDS: Scattering, Extreme ultraviolet, Photomasks, Silicon, Light scattering, Defect inspection, Reflectivity, Inspection, Stochastic processes, Signal detection

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Proceedings Article | 4 March 2010 Paper

Paper

A non-delta-chrome OPC methodology for process models with three-dimensional mask effects

Philip C. Ng, Kuen-Yu Tsai, Chih-Hsien Tang, Lawrence Melvin

Proceedings Volume 7640, 76402P (2010) https://doi.org/10.1117/12.846687

KEYWORDS: Optical proximity correction, Photomasks, Process modeling, 3D modeling, Optical lithography, Lithography, Computer simulations, Integrated circuits, Integrated circuit design, Nonlinear dynamics

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Proceedings Article | 14 December 2009 Paper

Paper

Preliminary design of a two-dimensional electron beam position monitor system for multiple-electron-beam-direct-write lithography

Sheng-Yung Chen, Kuen-Yu Tsai, Hoi-Tou Ng, Chi-Hsiang Fan, Ting-Hang Pei, Chieh-Hsiung Kuan, Yung-Yaw Chen, Jia-Yush Yen

Proceedings Volume 7520, 75202K (2009) https://doi.org/10.1117/12.837048

KEYWORDS: Sensors, Monte Carlo methods, Electron beams, Signal detection, Lithography, Electron beam lithography, Detector arrays, Optical simulations, Semiconducting wafers, Silicon

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Proceedings Article | 12 December 2009 Paper

Paper

Using transmission line theory to calculate equivalent refractive index of EUV mask multilayer structures for efficient scattering simulation by finite-difference time-domain method

Yen-Min Lee, Jia-Han Li, Philip Ng, Ting-Han Pei, Fu-Min Wang, Kuen-Yu Tsai, Alek Chen

Proceedings Volume 7520, 75200W (2009) https://doi.org/10.1117/12.837150

KEYWORDS: Finite-difference time-domain method, Extreme ultraviolet, Computer simulations, Reflectivity, Refractive index, Error analysis, Scattering, Molybdenum, Silicon, Surface roughness

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Proceedings Article | 11 December 2009 Paper

Paper

A fully model-based methodology for simultaneously correcting EUV mask shadowing and optical proximity effects with improved pattern transfer fidelity and process windows

Philip C. W. Ng, Kuen-Yu Tsai, Yen-Min Lee, Ting-Han Pei, Fu-Min Wang, Jia-Han Li, Alek Chen

Proceedings Volume 7520, 75200S (2009) https://doi.org/10.1117/12.837077

KEYWORDS: Photomasks, Model-based design, 3D modeling, Optical proximity correction, Semiconducting wafers, Computer simulations, Extreme ultraviolet, Process modeling, Extreme ultraviolet lithography, Image segmentation

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Proceedings Article | 4 December 2008 Paper

Paper

A novel curve-fitting procedure for determining proximity effect parameters in electron beam lithography

Chun-Hung Liu, Hoi-Tou Ng, Philip Ng, Kuen-Yu Tsai, Shy-Jay Lin, Jeng-Homg Chen

Proceedings Volume 7140, 71401I (2008) https://doi.org/10.1117/12.804693

KEYWORDS: Monte Carlo methods, Scattering, Electron beam lithography, Silicon, Data modeling, Polymethylmethacrylate, Laser scattering, Direct write lithography, Computer simulations, Backscatter

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Proceedings Article | 7 March 2008 Paper

Paper

Design of automatic controllers for model-based OPC with optimal resist threshold determination for improving correction convergence

Yi-Sheng Su, Philip Ng, Kuen-Yu Tsai, Yung-Yaw Chen

Proceedings Volume 6924, 69243Z (2008) https://doi.org/10.1117/12.772397

KEYWORDS: Photomasks, Optical proximity correction, Semiconducting wafers, Feedback control, Model-based design, Resolution enhancement technologies, Diffusion, Image processing, Lithographic illumination, Process modeling

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Proceedings Article | 5 April 2007 Paper

Paper

Real-time spatial control of photoresist development rate

Arthur Tay, Weng-Khuen Ho, Ni Hu, Choon-Meng Kiew, Kuen-Yu Tsai

Proceedings Volume 6518, 65182N (2007) https://doi.org/10.1117/12.711509

KEYWORDS: Photoresist developing, Photoresist materials, Semiconducting wafers, Lithography, Spectrometers, Critical dimension metrology, Process control, Photoresist processing, Reflectivity, Integrated circuits

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Proceedings Article | 21 March 2007 Paper

Paper

Impacts of optical proximity correction settings on electrical performances

Meng-Fu You, Philip Ng, Yi-Sheng Su, Kuen-Yu Tsai, Yi-Chang Lu

Proceedings Volume 6521, 65210W (2007) https://doi.org/10.1117/12.711850

KEYWORDS: Transistors, Optical proximity correction, Device simulation, Image segmentation, Critical dimension metrology, Semiconducting wafers, Lithography, Resolution enhancement technologies, Manufacturing, Design for manufacturability

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Proceedings Article | 10 March 2006 Paper

Paper

Real-time spatial control of steady-state wafer temperature during thermal processing in microlithography

Arthur Tay, Weng-Khuen Ho, Ni Hu, Kuen-Yu Tsai, Ying Zhou

Proceedings Volume 6155, 61550A (2006) https://doi.org/10.1117/12.654741

KEYWORDS: Semiconducting wafers, Optical lithography, Control systems, Thermal modeling, Resistance, Temperature sensors, Photoresist processing, Sensors, Process control, Critical dimension metrology

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Proceedings Article | 9 November 2005 Paper

Paper

On the sensitivity improvement and cross-correlation methodology for confocal EUV mask blank defect inspection tool fleet

Kuen-Yu Tsai, Eric Gullikson, Patrick Kearney, Alan Stivers

Proceedings Volume 5992, 599240 (2005) https://doi.org/10.1117/12.637754

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet, Confocal microscopy, Signal detection, Optical spheres, Defect detection, Extreme ultraviolet lithography, Defect inspection, Calibration

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Proceedings Article | 17 May 2005 Paper

Paper

Real-time control of photoresist absorption coefficient uniformity

Arthur Tay, Weng-Khuen Ho, Xiaodong Wu, Kuen-Yu Tsai

Proceedings Volume 5755, (2005) https://doi.org/10.1117/12.598582

KEYWORDS: Absorption, Photoresist materials, Semiconducting wafers, Spectrometers, Photoresist processing, Lithography, Sensors, Process control, Critical dimension metrology, Manufacturing

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Proceedings Article | 6 May 2005 Paper

Paper

Modeling the defect inspection sensitivity of a confocal microscope

E. Gullikson, E. Tejnil, K.-Y. Tsai, A. Stivers, H. Kusunose

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.600209

KEYWORDS: Optical spheres, Multilayers, Confocal microscopy, Photomasks, Microscopes, Silica, Defect inspection, Light scattering, Inspection, Scattering

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Showing 5 of 39 publications

Conference Committee Involvement (3)

SPIE Lithography Asia - Korea

13 October 2010 | n/a, Republic of Korea

SPIE Lithography Asia - Taiwan

18 November 2009 | Taipei, Taiwan

SPIE Lithography Asia - Taiwan

4 November 2008 | Taipei, Taiwan

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