Mr. Kyoungyoung Cho Profile

Kyoungyoung Cho

Principle Engineer at SUNY Poly SEMATECH

SPIE Involvement:

Author

Area of Expertise:

Photolithography , Photoresist , Overlay , EUV lithography , ArF immersion

Publications (19)

Proceedings Article | 28 April 2023 Presentation + Paper

Presentation + Paper

Chemical approach to make the most of EUVL: stochastic effect mitigation with developer and rinse

Hyungju Ryu, Dokyeong Kwon, Jiho Song, Wongi Park, Jinseong Gwak, Haram Ko, Jiyoung Lee, Jinpyoung Kim, Kyungseok Ryu, Sungjo Hwang, Taemin Jeong, Heeyoung Go, Yigwon Kim, Kyoungyong Cho, Sangjin Kim, Changmin Park

Proceedings Volume 12494, 1249404 (2023) https://doi.org/10.1117/12.2656415

KEYWORDS: Extreme ultraviolet, Stochastic processes, Extreme ultraviolet lithography, Lithography, Optical lithography, Photoresist processing, EUV optics, Chemical composition, Semiconductors

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Proceedings Article | 28 April 2023 Presentation + Paper

Presentation + Paper

An investigation on the process control for the solid application of EUV MOR

Sangjin Kim, Il-Hwan Kim, Hyungju Ryu, Yongbeom Seo, Yigwon Kim, Jinhee Jang, Tae-Min Choi, Sol Jeong, Yongchul Jeong, Kyoungyong Cho, Cheolin Jang, Kyeongbeom Park, Changmin Park

Proceedings Volume 12494, 124940V (2023) https://doi.org/10.1117/12.2658345

KEYWORDS: Etching, Extreme ultraviolet lithography, Metal oxides, Coating, Chemical reactions, Process control, Extreme ultraviolet

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Proceedings Article | 1 April 2013 Paper

Paper

Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning

Souvik Chakrabarty, Christine Ouyang, Marie Krysak, Markos Trikeriotis, Kyoungyoung Cho, Emmanuel Giannelis, Christopher Ober

Proceedings Volume 8679, 867906 (2013) https://doi.org/10.1117/12.2011490

KEYWORDS: Nanoparticles, Photoresist materials, Electron beam lithography, Oxides, Spectroscopy, Ions, Extreme ultraviolet lithography, Optical lithography, Carbon, Photoresist developing

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Proceedings Article | 1 April 2013 Paper

Paper

Simulation-assisted layout biasing in EUV lithography and prediction of an optimum resist parameter space

Chandra Sarma, John Biafore, Kyoungyong Cho, Karen Petrillo, Mark Neisser

Proceedings Volume 8679, 86792U (2013) https://doi.org/10.1117/12.2011880

KEYWORDS: Critical dimension metrology, Nanoimprint lithography, Extreme ultraviolet, Photomasks, Semiconducting wafers, Extreme ultraviolet lithography, Stochastic processes, Diffusion, Computer simulations, Calibration

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Proceedings Article | 1 April 2013 Paper

Paper

Resist process applications to improve EUV patterning

Karen Petrillo, Kyoungyoung Cho, Alexander Friz, Cecilia Montgomery, Dominic Ashworth, Mark Neisser, Stefan Wurm, Takashi Saito, Lior Huli, Akiteru Ko, Andrew Metz

Proceedings Volume 8679, 867911 (2013) https://doi.org/10.1117/12.2011566

KEYWORDS: Etching, Line width roughness, Extreme ultraviolet, Image processing, Photoresist processing, Extreme ultraviolet lithography, Silicon, Lithography, Optical lithography, Photons

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Proceedings Article | 29 March 2013 Paper

Paper

Non-aqueous negative-tone development of inorganic metal oxide nanoparticle photoresists for next generation lithography

Christine Ouyang, Yeon Sook Chung, Li Li, Mark Neisser, Kyoungyong Cho, Emmanuel Giannelis, Christopher Ober

Proceedings Volume 8682, 86820R (2013) https://doi.org/10.1117/12.2011282

KEYWORDS: Electron beam lithography, Nanoparticles, Photoresist materials, Photoresist developing, Oxides, Lithography, Extreme ultraviolet lithography, Metals, Etching, Line edge roughness

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Proceedings Article | 29 March 2013 Paper

Paper

LWR study on resist formulation parameters

Kyoungyoung Cho, Shinji Tarutani, Naoki Inoue, Hideaki Tsubaki, Mark Neisser

Proceedings Volume 8682, 868217 (2013) https://doi.org/10.1117/12.2011386

KEYWORDS: Line width roughness, Polymers, Amplifiers, Diffusion, Line edge roughness, Extreme ultraviolet, Semiconducting wafers, Photoresist processing, Extreme ultraviolet lithography, Molecules

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Proceedings Article | 23 March 2012 Paper

Paper

Key parameters of EUV resists for contact hole applications

Kyoungyong Cho, Hiroki Nakagawa, Ken Maruyama, Makoto Shimizu, Tooru Kimura, Yoshi Hishiro

Proceedings Volume 8322, 83221B (2012) https://doi.org/10.1117/12.916837

KEYWORDS: Diffusion, Extreme ultraviolet, Lithography, Optical lithography, Extreme ultraviolet lithography, Critical dimension metrology, Chemically amplified resists, Photomasks, Lithographic illumination, Semiconducting wafers

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Proceedings Article | 23 March 2012 Paper

Paper

Line width roughness control for EUV patterning

Karen Petrillo, George Huang, Dominic Ashworth, Liping Ren, K.-Y. Cho, Stefan Wurm, Shinichiro Kawakami, Lior Huli, Shannon Dunn, Akiteru Ko

Proceedings Volume 8322, 83222H (2012) https://doi.org/10.1117/12.925442

KEYWORDS: Line width roughness, Extreme ultraviolet lithography, Etching, Line edge roughness, Image processing, Extreme ultraviolet, Silicon, Optical lithography, Lithography, Scanning electron microscopy

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Proceedings Article | 23 March 2012 Paper

Paper

Tightly bound ligands for hafnium nanoparticle EUV resists

Brian Cardineau, Marie Krysak, Markos Trikeriotis, Emmanuel Giannelis, Christopher Ober, Kyoungyong Cho, Robert Brainard

Proceedings Volume 8322, 83220V (2012) https://doi.org/10.1117/12.917014

KEYWORDS: Nanoparticles, Hafnium, Solids, Sodium, Lithography, Extreme ultraviolet, Oxides, Crystals, Magnetism, Bioalcohols

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Proceedings Article | 23 March 2012 Paper

Paper

A new inorganic EUV resist with high-etch resistance

Markos Trikeriotis, Marie Krysak, Yeon Sook Chung, Christine Ouyang, Brian Cardineau, Robert Brainard, Christopher Ober, Emmanuel Giannelis, Kyoungyong Cho

Proceedings Volume 8322, 83220U (2012) https://doi.org/10.1117/12.916384

KEYWORDS: Photoresist materials, Extreme ultraviolet lithography, Etching, Nanoparticles, Resistance, Extreme ultraviolet, Absorbance, Electron beam lithography, Line edge roughness, Hafnium

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Proceedings Article | 8 April 2011 Paper

Paper

Availability of underlayer application to EUV process

Hitoshi Kosugi, Carlos Fonseca, Fumiko Iwao, Hiroshi Marumoto, Hyun-Woo Kim, Kyoungyong Cho, Cheol-Hong Park, Chang-Min Park, Hai-Sub Na, Cha-Won Koh, Hanku Cho

Proceedings Volume 7969, 79692E (2011) https://doi.org/10.1117/12.878730

KEYWORDS: Coating, Semiconducting wafers, Contamination, Extreme ultraviolet, Data modeling, Calibration, Extreme ultraviolet lithography, Scanning electron microscopy, Etching, Thin films

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Proceedings Article | 7 April 2011 Paper

Paper

LWR improvement in EUV resist process

Chawon Koh, Hyun-Woo Kim, Sumin Kim, Hai-Sub Na, Chang-Min Park, Cheolhong Park, Kyoung-Yong Cho

Proceedings Volume 7969, 796918 (2011) https://doi.org/10.1117/12.879334

KEYWORDS: Line width roughness, Extreme ultraviolet, Extreme ultraviolet lithography, Photoresist processing, Critical dimension metrology, Etching, Inspection, Electronics, Optical lithography, Semiconductors

Read Abstract +

Extreme ultraviolet lithography (EUVL) is the most effective way to print sub-30 nm features. The roughness of both the resist sidewall (line width roughness [LWR]) and resist top must be overcome soon for EUVL to be implemented. Currently, LWR can vary by about 1 nm according to the recipe used. We have characterized two promising techniques to improve LWR, an EUV rinse/TBAH process and an implant process, and demonstrated their efficacy. After cleaning inspection (ACI), LWR was improved with both the rinse and implant processes. After development inspection (ADI), LWR improved (0.12 nm, 2.4%) and ACI LWR improved (0.1 nm, 2.0% improvement) after using the EUV rinse process. ADI and ACI LWR improvement (0.45 nm, 9.1%, and 0.3 nm, 6.9%, respectively) was demonstrated with the EUV rinse/TBAH process. ADI LWR improvement (0.5 nm, 8.1%) and ACI LWR improvement (-0.5 nm, -16.9%) were characterized with the implant process. Critical dimension (CD) showed similar changes through pitch after the EUV rinse or TBAH process, but the degree of change depended on the initial pattern size giving CD difference of 2 nm between 30 nm HP and 50 nm HP after the implant process. For this technique, the dependence of CD change on pattern size must be minimized. Further extensive studies with rinse or implant are strongly encouraged for continued LWR improvement and real process implementation in EUVL. Demonstrating <2.2 nm LWR after pattern transfer is important in EUVL and needs to be pursued using various technical approaches. Initial resist LWR is important in assessing LWR improvements with additional process techniques. An initial EUV LWR < ~5.0 nm is required to properly assess the validity of the technique. Further study is required to improve ADI LWR and maintain better LWR after etch with advanced EUV rinse materials. Defects also need to be confirmed following the EUV rinse and TBAH developer. Further developing the implant process should focus on LWR improvement at low frequencies and optimization of process conditions to maintain the EUV resist profile and resist height. The dependence of CD change on pattern size likewise needs to be minimized.

Proceedings Article | 7 April 2011 Paper

Paper

Line width roughness control and pattern collapse solutions for EUV patterning

Karen Petrillo, George Huang, Dominic Ashworth, Jacque Georger, Liping Ren, K. Y. Cho, Warren Montgomery, Stefan Wurm, Shinichiro Kawakami, Shannon Dunn, Akiteryu Ko

Proceedings Volume 7969, 796913 (2011) https://doi.org/10.1117/12.879513

KEYWORDS: Line width roughness, Extreme ultraviolet, Extreme ultraviolet lithography, Etching, Photoresist processing, Image processing, Semiconducting wafers, Optical lithography, Critical dimension metrology, Scanning electron microscopy

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Proceedings Article | 3 April 2010 Paper

Paper

Nanoimprint template fabrication using wafer pattern for sub-30nm

C. Park, K. Kim, Y. Lee, K. Cho, J. Park, In Kim, J. Yeo, S. Choi, D. Lee, B. Lee, S. Hwang

Proceedings Volume 7637, 76371R (2010) https://doi.org/10.1117/12.846481

KEYWORDS: Nanoimprint lithography, Semiconducting wafers, Electron beam lithography, Lithography, Line width roughness, Etching, Photomasks, Silicon, Optical lithography, Quartz

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Proceedings Article | 20 March 2010 Paper

Paper

The analysis of EUV mask defects using a wafer defect inspection system

Kyoung-Yong Cho, Joo-On Park, Changmin Park, Young-Mi Lee, In-Yong Kang, Jeong-Ho Yeo, Seong-Woon Choi, Chan-Hoon Park, Steven Lange, SungChan Cho, Robert Danen, Gregory Kirk, Yeon-Ho Pae

Proceedings Volume 7636, 76361E (2010) https://doi.org/10.1117/12.846482

KEYWORDS: Semiconducting wafers, Photomasks, Line width roughness, Inspection, Wafer inspection, Scanning electron microscopy, Defect detection, Signal to noise ratio, Extreme ultraviolet lithography, Line edge roughness

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Proceedings Article | 20 March 2010 Paper

Paper

A study of defects on EUV masks using blank inspection, patterned mask inspection, and wafer inspection

Sungmin Huh, Liping Ren, David Chan, Stefan Wurm, Kenneth Goldberg, Iacopo Mochi, Toshio Nakajima, Masahiro Kishimoto, Byungsup Ahn, Inyong Kang, Joo-on Park, Kyoungyong Cho, Sang-in Han, Thomas Laursen

Proceedings Volume 7636, 76360K (2010) https://doi.org/10.1117/12.846922

KEYWORDS: Photomasks, Wafer inspection, Inspection, Particles, Extreme ultraviolet, Semiconducting wafers, Extreme ultraviolet lithography, Defect detection, Mask making, High volume manufacturing

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Proceedings Article | 20 March 2010 Paper

Paper

Patterning with EUVL: the road to 22nm node

Hyun-Woo Kim, Hai-Sub Na, Kyoung-Yong Cho, Chang-Min Park, Takahiro Yasue, Subramanya Mayya, Han-Ku Cho

Proceedings Volume 7636, 76360Q (2010) https://doi.org/10.1117/12.846474

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Line width roughness, Lithography, Deep ultraviolet, Polymers, Chemical reactions, Double patterning technology, Opacity, Photomasks

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Proceedings Article | 23 September 2009 Paper

Paper

Revisit to aberration: a simulation study of lens aberration induced overlay misalignment and its experimental validation

Hoyeon Kim, Sung-Woo Lee, Byeongcheol Lee, Sanghwa Lee, Kyoungyong Cho, Seong-Woon Choi, Chan-Hoon Park

Proceedings Volume 7488, 74883E (2009) https://doi.org/10.1117/12.833345

KEYWORDS: Semiconducting wafers, Overlay metrology, Projection systems, Scanners, Monochromatic aberrations, Lithography, Solids, Aberration correction, Metrology, Optical alignment

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Showing 5 of 19 publications

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