Mr. Qiang Lei Profile

Qiang Lei

at Southwest Univ. of Science and Technology

SPIE Involvement:

Author

Publications (4)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 20 February 2018 Paper

The MEMS process of a micro friction sensor

Ming-Quan Yuan, Qiang Lei, Xiong Wang

Proceedings Volume 10697, 106970J (2018) https://doi.org/10.1117/12.2306820

KEYWORDS: Sensors, Silicon, Microelectromechanical systems, Skin, Corrosion, Glasses, Capacitance, Etching, Chemical elements, Deep reactive ion etching

Read Abstract +

The research and testing techniques of friction sensor is an important support for hypersonic aircraft. Compared with the conventional skin friction sensor, the MEMS skin friction sensor has the advantages of small size, high sensitivity, good stability and dynamic response. The MEMS skin friction sensor can be integrated with other flow field sensors whose process is compatible with MEMS skin friction sensor to achieve multi-physical measurement of the flow field; and the micro-friction balance sensor array enable to achieve large area and accurate measurement for the near-wall flow. A MEMS skin friction sensor structure is proposed, which sensing element not directly contacted with the flow field. The MEMS fabrication process of the sensing element is described in detail. The thermal silicon oxide is used as the mask to solve the selection ratio problem of silicon DRIE. The optimized process parameters of silicon DRIE: etching power 1600W/LF power 100 W; SF₆ flux 360 sccm; C₄F₈ flux 300 sccm; O₂ flux 300 sccm. With Cr/Au mask, etch depth of glass shallow groove can be controlled in 30°C low concentration HF solution; the spray etch and wafer rotate improve the corrosion surface quality of glass shallow groove. The MEMS skin friction sensor samples were fabricated by the above MEMS process, and results show that the error of the length and width of the elastic cantilever is within 2 μm, the depth error of the shallow groove is less than 0.03 μm, and the static capacitance error is within 0.2 pF, which satisfy the design requirements.

Proceedings Article | 15 November 2017 Paper

Structure design of a high-performance aluminum nitride differential resonant accelerometer

Qiang Lei, Yang Gao, Da-peng Zhang

Proceedings Volume 10605, 1060519 (2017) https://doi.org/10.1117/12.2287159

KEYWORDS: Aluminum nitride, Structural design

Read Abstract +

A high-performance aluminum nitride (AlN) differential resonant accelerometer is proposed. The inertia force of the proof mass is amplified to improve the sensitivity by two-stage microlever; the cross sensitivity is reduced by I-shape supporting beam; and the differential frequency detection scheme is used to decrease the effect of temperature common mode error. The accelerometer is mainly composed of proof mass, supporting beam, two-stage microlever and resonator, and its structural parameters are optimized by theoretical analysis and finite element simulation. The modal analysis shows that the fundamental frequencies of the two resonators are approximately 373.3 kHz, and the frequency differences from the interferential modes are about 9.4 kHz, which effectively achieves mode isolation. According to the simulation results of sensitivity, the sensitivity, linearity and cross sensitivity of AlN differential resonator accelerometer are 64.6 Hz/g, 0.787% and 0.0033 Hz/g, respectively. The simulation results of thermal stress show that the temperature sensitivity of a single resonator is about 490 Hz/°C, and the temperature sensitivity of output differential frequency is - 0.83 Hz/°C, which demonstrate that the differential frequency detection scheme can reduce the influence of temperature common mode error. All the above simulation results prove that this structural design of the accelerometer is feasible.

Proceedings Article | 15 November 2017 Paper

Structure design of AlN double-ended tuning fork resonators

Qiang Lei, Yang Gao, Chao Han

Proceedings Volume 10605, 1060518 (2017) https://doi.org/10.1117/12.2287156

KEYWORDS: Aluminum nitride, Structural design, Resonators

Read Abstract +

The resonant sensors based on aluminum nitride double-ended tuning fork (AlN DETF) have the characteristics of small size, good stability and reliability, fast response. In order to improve the sensitivity and resolution, it is necessary to analyze the influence of the structure parameters of vibrating beam on the sensitivity and signal power of AlN resonator. The multi-physics model of AlN DETF resonator was established to verify effect of single parameter on the sensitivity by pre-stressed eigenfrequency analysis. The relationships between signal power and length, width of vibrating beam were obtained by post-processing data of simulation results when the thickness remained constant. The results show that relative sensitivity and signal power are growing with opposite direction with the width or the length of the beam. Therefore, there is a design tradeoff between signal power and relative sensitivity of AlN resonator according to the process and structure strength. The optimized AlN DETF resonator was simulated, its sensitivity, signal power and Q are 56 Hz/μN, 6.8e-4 nW and 958, respectively.

Proceedings Article | 5 January 2017 Paper

Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer

Yang Gao, Jun-ru Li, Le Jia, Qiang Lei

Proceedings Volume 10244, 102441W (2017) https://doi.org/10.1117/12.2261426

Read Abstract +

In order to obtain the high-fidelity model of latching failure threshold power of the capacitive RF MEMS switch, it is necessary to find out the rough dielectric layer effect on its down-state capacitance degradation. The comparative modeling method between the 3-D electromagnetic simulation and the equivalent circuit simulation is proposed. First, the simulation curve of the switch isolation (S₂₁) is attained at different roughness levels with the HFSS 3-D electromagnetic model. And then the simulation curve of the S₂₁ of the ADS equivalent circuit model is consistent with the simulation result of the 3-D electromagnetic as far as possible by tuning the down-state capacitance in the equivalent circuit. Hence, the relationship between the dielectric layer roughness and the down-state capacitance is identified. By changing the roughness level of dielectric layer and repeating the above steps, the relationship between the dielectric layer roughness and the down-state capacitance degradation is identified. Rationality and feasibility of the method is verified by comparing the calculated values of the down-state capacitance with the measured values in a relevant literature. And analytical equation of the latching failure threshold power of the capacitive RF MEMS switch with perfect smooth dielectric layer is modified, according to the relationship between the dielectric layer roughness and the down-state capacitance degradation, which is also suitable for predicting the power handling capacity of the switch with rough dielectric layer.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years