With the rise of cloud computing, big data, and mobile internet, there is an increasing demand in information society for higher communication bandwidth and speed. There is an urgent need to conduct research on the next generation of ultra-high-speed transmission networks, with high-speed photodetectors being key components. We designed and fabricated a high responsivity, high bandwidth, and high output power edge-coupled Uni-Traveling Carrier Photodetector (UTC-PD). This paper details the structural design, experimental fabrication, and test results of a 1550nm wavelength InP-based edge-coupled UTC-PD. To achieve high responsivity and bandwidth simultaneously, we optimized the thickness of the absorption and collection layers. The device was fabricated using metal organic chemical vapor deposition and contact lithography techniques. The test results show that at a wavelength of 1550nm, the UTC-PD achieves a photoresponse of 0.49A/W (without anti-reflection coating). We conducted high-frequency performance testing of the photodetector using a vector network analyzer. Photodetectors of the same size exhibited uniform bandwidth performance, with a maximum bandwidth reaching up to 34.1GHz. At an optical current of 2.85mA, the photodetector exhibits RF output powers of 247uW @ 1GHz and 26.8uW @ 91GHz, with a reduction of 8.96dB within the 90GHz frequency range. This high responsivity, high bandwidth, and high output power photodetector could offer promising chip options for upcoming ultra-high-speed optical transmission networks.
A top-illuminated planar InAlAs/InGaAs Avalanche Photodiode (APD) with Separation Absorption, Charge and Multiplication (SACM) structure has been demonstrated. The fabricated APD results showed that the maximum 3dB bandwidth of the APD reaches 33 GHz at M=2. The dark current is 1 μA at 0.9 breakdown voltage, and the unit responsivity is 0.3 A/W operating at 1.55 μm. The maximum gain of the device is 20, when the incident light intensity is 20 μW. It is important to emphasize that the active area diameter of the fabricated device is 15 μm. Such a large active area diameter provides greater alignment tolerance for fiber coupling compared to using waveguide structures. These characteristics demonstrate the potential of planar InAlAs/InGaAs -APDs for 50-Gbit/s Passive Optical Networks (PONs) in optical communication systems.
We propose a polarization insensitive multimode interference coupler (MMI) design for optical 90° hybrid. The 90° hybrid used in coherent receiver application is based on the Indium Phosphorus (InP) platform, which can realize monolithic integration with detectors. By using the three dimension beam propagation method, a 90° hybrid based on a polarization insensitive MMI has been designed and optimized. We find that there is an ideal interference length for both transverse electric (TE) mode and transverse magnetic (TM) mode in this structure. Using the designed 90° hybrid, we demonstrate the common mode rejection ratios for in-phase channels and quadrature channels better than -20 dB and the phase errors better than ±3° in an ideal interference length range. The phase errors of the I-channel and Q-channel less than ±4° when the interference length is 480μm across the C band (1535-1560 nm).
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