We demonstrate a new generation of composition-tuned, ternary GaAsSb nanowire lasers on silicon with emission wavelengths tuned to below the Si bandgap. By solving previous limitations in the growth of III-As-Sb based nanowires, resonator cavities with extended lengths > 7 µm and high Sb-content (~30%) are realized as a base for bulk-type or quantum-well based nanowire lasers. Bulk GaAsSb nanowire lasers with high radiative efficiency and low threshold are enabled by use of lattice-matched InAlGaAs surface passivation layers. Coaxial InGaAs multi-quantum well (MQW) active regions grown on GaAsSb nanowire templates open further scope of tailoring material gain and lasing wavelength.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.