Prof. Markus Pessa Profile

Prof. Markus Pessa

Director at Tampere Univ

SPIE Involvement:

Author

Publications (48)

Proceedings Article | 17 February 2011 Paper

Paper

Narrow-linewidth distributed feedback lasers with laterally coupled ridge-waveguide surface gratings fabricated using nanoimprint lithography

M. Dumitrescu, J. Telkkälä, J. Karinen, J. Viheriälä, A. Laakso, K. Haring, M.-R. Viljanen, J. Paajaste, R. Koskinen, S. Suomalainen, J. Lyytikäinen, T. Leinonen, M. Pessa

Proceedings Volume 7953, 79530B (2011) https://doi.org/10.1117/12.875317

KEYWORDS: Laser development, Refractive index, Mirrors, Etching, Nanoimprint lithography, Laser damage threshold, Laser applications, LIDAR, Reflectivity, Fabrication

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Proceedings Article | 17 February 2010 Paper

Paper

A 7-W 1178nm GaInNAs based disk laser for guide star applications

T. Leinonen, V.-M. Korpijärvi, J. Puustinen, A. Härkönen, M. Guina, M. Pessa

Proceedings Volume 7578, 757811 (2010) https://doi.org/10.1117/12.841365

KEYWORDS: Quantum wells, Mirrors, Disk lasers, Semiconductor lasers, Diamond, Nitrogen, Luminescence, Reflectivity, Output couplers, Stars

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Proceedings Article | 5 August 2009 Paper

Paper

Dual-wavelength distributed feedback laser for the generation of terahertz radiation

Antti Laakso, Mihail Dumitrescu, Markus Pessa

Proceedings Volume 7386, 73862K (2009) https://doi.org/10.1117/12.839628

KEYWORDS: Terahertz radiation, Modulation, Refractive index, Quantum wells, Optical simulations, Phase shift keying, Temperature metrology, Laser applications, Continuous wave operation, Waveguides

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SPIE Journal Paper | 1 July 2009

Soft stamp ultraviolet-nanoimprint lithography for fabrication of laser diodes

Jukka Viheriala, Milla-Riina Viljanen, Juha Kontio, Tomi Leinonen, Juha Tommila, Mihail Dumitrescu, Tapio Niemi, Markus Pessa

JM3, Vol. 8, Issue 03, 033004, (July 2009) https://doi.org/10.1117/12.10.1117/1.3158307

KEYWORDS: Semiconducting wafers, Nanoimprint lithography, Waveguides, Etching, Semiconductor lasers, Lithography, Particles, Photomasks, Nanostructures, Electron beam lithography

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Proceedings Article | 19 May 2009 Paper

Paper

Highly nonlinear GaSb-based saturable absorber mirrors

R. Koskinen, S. Suomalainen, J. Paajaste, S. Kivistö, M. Guina, O. Okhotnikov, M. Pessa

Proceedings Volume 7354, 73540G (2009) https://doi.org/10.1117/12.820690

KEYWORDS: Quantum wells, Gallium antimonide, Reflectivity, Mirrors, Modulation, Fiber lasers, Q switching, Semiconductors, Q switched fiber lasers, Q switches

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Proceedings Article | 18 March 2009 Paper

Paper

Soft stamp UV-nanoimprint lithography for fabrication of laser diodes

Jukka Viheriälä, Milla-Riina Viljanen, Juha Kontio, Tomi Leinonen, Juha Tommila, Michail Dumitrescu, Tapio Niemi, Markus Pessa

Proceedings Volume 7271, 72711O (2009) https://doi.org/10.1117/12.814122

KEYWORDS: Semiconducting wafers, Nanoimprint lithography, Waveguides, Etching, Semiconductor lasers, Particles, Nanostructures, Electron beam lithography, Photomasks, Lithography

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Proceedings Article | 28 February 2009 Paper

Paper

GaSb-based compounds tailored for MID-IR disk lasers

M. Guina, A. Härkönen, S. Suomalinen, J. Paajaste, R. Koskinen, M. Pessa, O. Okhotnikov

Proceedings Volume 7193, 71931F (2009) https://doi.org/10.1117/12.816221

KEYWORDS: Mirrors, Quantum wells, Disk lasers, Gallium antimonide, Semiconductor lasers, Semiconductors, Mode locking, Heterojunctions, Diamond, Mid-IR

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Proceedings Article | 8 May 2008 Paper

Paper

Fabrication and characterization of GaInNAs/GaAs semiconductor optical amplifiers

J. Pozo, N. Vogiatzis, O. Ansell, P. Heard, J. Rorison, P. Tuomisto, J. Konttinen, M. Saarinen, C. Peng, J. Viheriälä, T. Leinonen, M. Pessa

Proceedings Volume 6997, 69970C (2008) https://doi.org/10.1117/12.781283

KEYWORDS: Etching, Ion beams, Semiconductor optical amplifiers, Photonic integrated circuits, Coarse wavelength division multiplexing, Quantum wells, Semiconductor lasers, Temperature metrology, Tunable lasers, Iodine

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Proceedings Article | 14 February 2008 Paper

Paper

Comparison of thermal management techniques for semiconductor disk lasers

S. Giet, A. Kemp, D. Burns, S. Calvez, M. Dawson, S. Suomalainen, A. Harkonen, M. Guina, O. Okhotnikov, M. Pessa

Proceedings Volume 6871, 687115 (2008) https://doi.org/10.1117/12.761616

KEYWORDS: Semiconductors, Diamond, Resistance, Silicon carbide, Semiconductor lasers, Disk lasers, Output couplers, Quantum wells, Heatsinks, Temperature metrology

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Proceedings Article | 19 November 2007 Paper

Paper

Photonics studies on dilute nitrides at long wavelength for telecommunication

C. Peng, M. Pessa

Proceedings Volume 6782, 67821M (2007) https://doi.org/10.1117/12.754554

KEYWORDS: Quantum wells, Gallium arsenide, Annealing, Gallium, Indium gallium arsenide, Nitrogen, Heat treatments, Absorption, Diffusion, Laser damage threshold

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Proceedings Article | 14 April 2006 Paper

Paper

Improvements in GaInNAs/GaAs quantum-well lasers using focused ion beam post-processing

J. Pozo, J. Hu, J. Rorison, M. Saarinen, J. Konttinen, J. Viheriälä, P. Leinonen, T. Jouhti, M. Pessa

Proceedings Volume 6184, 61840B (2006) https://doi.org/10.1117/12.663325

KEYWORDS: Modulation, Ion beams, Waveguides, Temperature metrology, Quantum wells, Semiconductor lasers, Optical design, Laser processing, Metals, Waveguide lasers

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Proceedings Article | 14 April 2006 Paper

Paper

High-gain new InGaAsN heterostructure

C. Peng, J. Konttinen, T. Jouhti, M. Pessa

Proceedings Volume 6184, 618409 (2006) https://doi.org/10.1117/12.663398

KEYWORDS: Beryllium, Quantum wells, Optical properties, Indium gallium arsenide, Annealing, Gallium arsenide, Luminescence, Nitrogen, Gallium, Chemical species

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Proceedings Article | 6 December 2005 Paper

Paper

High-gain InGaAsN materials

C. S. Peng, J. Konttinen, T. Jouhti, M. Pessa

Proceedings Volume 6020, 60200H (2005) https://doi.org/10.1117/12.636510

KEYWORDS: Beryllium, Quantum wells, Annealing, Gallium arsenide, Nitrogen, Chemical species, Laser processing, Doping, Luminescence, Arsenic

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Proceedings Article | 7 July 2005 Paper

Paper

Investigation on the high speed modulation in (GaIn)(NAs)/GaAs lasers

J. Pozo, Y. Qiu, P. Ivanov, P. Yu, J. Rorison, M. Saarinen, J. Konttinen, T. Jouhti, M. Pessa

Proceedings Volume 5840, (2005) https://doi.org/10.1117/12.619150

KEYWORDS: Modulation, Temperature metrology, Semiconductor lasers, Quantum wells, Nitrogen, Laser damage threshold, Eye, Fabry–Perot interferometers, Gallium arsenide, Refractive index

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Proceedings Article | 1 April 2005 Paper

Paper

InGaAsN/GaAs lasers: high performance and long lifetime

C. S. Peng, Janne Konttinen, Tomi Jouhti, Markus Pessa

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.586658

KEYWORDS: Gallium arsenide, Continuous wave operation, Waveguide lasers, Gallium, Laser damage threshold, Pulsed laser operation, Vertical cavity surface emitting lasers, Laser processing, Laser development, High power lasers

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Proceedings Article | 7 March 2005 Paper

Paper

Superluminescent diodes at 1.55 um based on quantum-well and quantum-dot active regions

Wei Li, Risto Ronkko, Andreas Rydefalk, Pekka Poyhonen, Markus Pessa

Proceedings Volume 5739, (2005) https://doi.org/10.1117/12.590362

KEYWORDS: Indium arsenide, Quantum wells, Waveguides, Superluminescent diodes, Gallium arsenide, Modulation, Gallium, Continuous wave operation, Atomic force microscopy

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Proceedings Article | 1 September 2004 Paper

Paper

SS-MBE-grown short red wavelength range AlGaInP laser structures

Lauri Toikkanen, Mihail Dumitrescu, Antti Tukiainen, Suvi Viitala, Mikko Suominen, Vesa Erojärvi, Ville Rimpiläinen, Risto Rönkkö, Markus Pessa

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.545592

KEYWORDS: Quantum wells, Waveguides, Cladding, GRIN lenses, Aluminum, Doping, Aluminium gallium indium phosphide, Gallium, Refractive index, Semiconductor lasers

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Proceedings Article | 1 September 2004 Paper

Paper

Investigation of optical gain and L-I characteristics in (GaIn)(NAs)/GaAs lasers

Jose Pozo, T. Houle, Judy Rorison, T. Jouhti, Markus Pessa

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.546474

KEYWORDS: Temperature metrology, Quantum wells, Vertical cavity surface emitting lasers, Nitrogen, Semiconductor lasers, Pulsed laser operation, Indium gallium arsenide, Laser marking, Telecommunications, Laser optics

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GaInNAs quantum well lasers have attracted significant interest in recent years. Their potential for operation at high temperatures without coolers and their application for low cost vertical-cavity surface-emitting lasers (VCSELs) are the main reasons for this interest. The main consequence of adding Nitrogen (N) to InGaAs materials is the band gap shrinkage. The reason for that is the interaction of N (acting as a localized defect) with the conduction band of the InGaAs. In previous studies, low temperature PL measurements of the impact of Nitrogen on the band structure of GaIn NAs have been examined. Pulsed measurements using a broad area GaInNAs QW laser were carried out and the results were analyzed in terms of the interaction of the N defect state with the GaInAs conduction band edge (band-anticrossing model). A detailed experimental temperature study of single quantum-well GaInNAs lasers at room temperature and above has been carried out. Experimental results of L-I, T₀, temperature dependence of lasing wavelength, optical gain and efficiencies are presented, discussed and compared with other materials. The temperature ranges studied is appropriate for most network applications. The gain spectra for moderate densities were experimentally measured using the method of Hakki and Paoli: the 600 μm long devise is biased below threshold and the gain is evaluated form the Fabry Perot modulation of the spontaneous emission spectra. A new concept will be introduced to study the bandwidth of the spectral gain and see its dependence with the temperature. The half-peak-BW will be the bandwidth where the gain decreases 50% from the peak gain. The temperature performance of the half-peak-BW has been studied obtaining a slope of 0.5871 nm/K. About the temperature dependence of the laser, a value of T_o (50 K) similar than the one found in InGaAsP has been found. This might disagree with the first results published of this new material system, giving extremely high values above 100 K. This is due to the high A parameter found in the previous materials. The improvement of the material is decreasing the A parameter and the characteristic temperature of the device. A small temperature dependence of the lasing wavelength was found (0.37 nm/K). This value was confirmed measuring the temperature dependence of the gain peak wavelength. This small temperature dependence can be understood by the interaction of the N state with the conduction band edge.

Proceedings Article | 1 September 2004 Paper

Paper

Characterization of 1550 nm Fabry-Perot laser structures for application as mode-locked pulse sources

Wei Li, Risto Ronkko, M. Peltola, A. Rydefalk, Markus Pessa, H. Scholl, S. Garidel, Kevin Williams, P. Moreno, H. Lamela, M. Cavallari

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.543908

KEYWORDS: Quantum wells, Mode locking, Pulsed laser operation, Semiconductor lasers, External quantum efficiency, Picosecond phenomena, Waveguide lasers, Fabry–Perot interferometers, Laser damage threshold, Waveguides

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Proceedings Article | 1 September 2004 Paper

Paper

Angular and spectral selectivity of resonant cavity light emitting diodes used as resonant cavity photodetectors

Mihail Dumitrescu, Emil-Mihai Pavelescu, Charis Reith, Tomi Leinonen, Mikko Suominen, Markus Pessa

Proceedings Volume 5459, (2004) https://doi.org/10.1117/12.545531

KEYWORDS: Photodetectors, Reflectivity, Mirrors, Quantum wells, Absorption, Optical microcavities, Light emitting diodes, Reflection, Distributed Bragg reflectors, Wavelength division multiplexing

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Proceedings Article | 4 June 2004 Paper

Paper

X-ray analysis of strain relaxation in multilayer systems InxGa1-xAS1-yNy/GaAs

Markus Pessa, Emil-Mihai Pavelescu, Igor Fodchuk, V. Gevyk, A. Shpak, V. Molodkin, E. Kislovskii, S. Olikhovskii

Proceedings Volume 5477, (2004) https://doi.org/10.1117/12.560019

KEYWORDS: Quantum wells, Gallium arsenide, Chemical species, X-rays, Annealing, Gallium, X-ray diffraction, Nitrogen, Indium, Multilayers

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Proceedings Article | 11 May 2004 Paper

Paper

Thermal annealing effect on InGaAsN/GaAs lasers

Changsi Peng, Janne Konttinen, Suvi Karirinne, Tomi Jouhti, Hongfei Liu, Markus Pessa

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.529120

KEYWORDS: Annealing, Absorption, Gallium arsenide, Thermal effects, Laser processing, Cladding, Beryllium, Semiconductor lasers, Semiconducting wafers, Quantum wells

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Proceedings Article | 25 July 2003 Paper

Paper

Mode structures and their evolution with current in a twin stripe laser array

Guillermo Carpintero, Horacio Lamela, R. Lemos, Pablo Acedo, B. Roycroft, Jean-Pierre Vilcot, Markus Pessa

Proceedings Volume 4986, (2003) https://doi.org/10.1117/12.478950

KEYWORDS: Lawrencium, Instrument modeling, Semiconductor lasers, Mode locking, Modulation, Modes of laser operation, Optical filters, Physics, Optical simulations, Optoelectronic devices

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Proceedings Article | 25 July 2003 Paper

Paper

Experimental measurements of the ridge spacing influence on the frequency response and optical spectrum of laterally coupled laser diodes

Horacio Lamela, Rui Santos, Guillermo Carpintero, Jean-Pierre Vilcot, A. Barsella, J. Figueiredo, Markus Pessa

Proceedings Volume 4986, (2003) https://doi.org/10.1117/12.478961

KEYWORDS: Semiconductor lasers, Measurement devices, Laser applications, Integrated optics, Optical testing, Analytical research, Mode locking, Optoelectronic devices, Frequency modulation, Laser damage threshold

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Proceedings Article | 25 July 2003 Paper

Paper

High-frequency modulation of twin-stripe semiconductor lasers

Edeltraud Gehrig, Nicoletta Gaciu, Markus Pessa, Ortwin Hess

Proceedings Volume 4986, (2003) https://doi.org/10.1117/12.479633

KEYWORDS: Modulation, Semiconductor lasers, Optical simulations, Polarization, Laser scattering, Laser resonators, Semiconductors, Carrier dynamics, Light wave propagation, Ultrafast phenomena

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Proceedings Article | 12 June 2002 Paper

Paper

Modal properties of twin ridge laser diodes

Brendan Roycroft, Horacio Lamela, Guillermo Carpintero, Rui Santos, Markus Pessa

Proceedings Volume 4646, (2002) https://doi.org/10.1117/12.470537

KEYWORDS: Semiconductor lasers, Modulation, Near field, Lasers, CCD image sensors, Charge-coupled devices, Monochromators, CCD cameras, Near field optics, Visible radiation

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Proceedings Article | 22 May 2002 Paper

Paper

Group III-arsenide-nitride quantum well structures on GaAs for laser diodes emitting at 1.3 um

Tomi Jouhti, Chang Peng, Emil-Mihai Pavelescu, Wei Li, Victor-Tapio Rangel-Kuoppa, Janne Konttinen, Pekka Laukkanen, Markus Pessa

Proceedings Volume 4651, (2002) https://doi.org/10.1117/12.467963

KEYWORDS: Quantum wells, Gallium arsenide, Annealing, Nitrogen, Gallium, Atomic force microscopy, Luminescence, Indium, Semiconductor lasers, Crystals

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Proceedings Article | 22 May 2002 Paper

Paper

High-performance 1.32-um GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy

Wei Li, Chang Peng, Tomi Jouhti, Janne Konttinen, Emil-Mihai Pavelescu, Mikko Suominen, Mihail Dumitrescu, Markus Pessa

Proceedings Volume 4651, (2002) https://doi.org/10.1117/12.467961

KEYWORDS: Quantum wells, Molecular beam epitaxy, Laser damage threshold, Continuous wave operation, Pulsed laser operation, Diffusion, Oxides, Gallium arsenide, Temperature metrology, Luminescence

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Proceedings Article | 21 May 2002 Paper

Paper

Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy

Wei Li, Markus Pessa, Tommy Ahlgren, James Dekker

Proceedings Volume 4650, (2002) https://doi.org/10.1117/12.467665

KEYWORDS: Nitrogen, Gallium, Annealing, Luminescence, Gallium arsenide, Ions, Molecular beam epitaxy, Chemical species, Arsenic, Backscatter

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Proceedings Article | 9 July 2001 Paper

Paper

Experimental characterization and analysis of the static behavior of twin-ridge AlGaInAs laterally coupled lasers (LCDL)

Brendan Roycroft, Pekko Sipilae, Petri Melanen, Pekka Savolainen, Markus Pessa, Manuel Leones, Sara Perez, Guillermo Carpintero, Horacio Lamela

Proceedings Volume 4283, (2001) https://doi.org/10.1117/12.432579

KEYWORDS: Semiconductor lasers, Near field, Optoelectronics, Modulation, Quantum wells, Scanning electron microscopy, Resistance, Optical testing, Optoelectronic devices, Temperature metrology

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Proceedings Article | 14 May 2001 Paper

Paper

Visible-light-emitting diodes based on microcavity concepts

Mihail Dumitrescu, Mika Saarinen, Ville Vilokkinen, Pekko Sipilae, Mircea Guina, Markus Pessa

Proceedings Volume 4278, (2001) https://doi.org/10.1117/12.426832

KEYWORDS: Phase only filters, Quantum wells, Mirrors, Gallium, Aluminum, Reflectivity, Optical fibers, Temperature metrology, Light emitting diodes, Modulation

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Proceedings Article | 4 May 2001 Paper

Paper

Visible-light vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy

Mika Saarinen, Ning Xiang, Mihail Dumitrescu, Ville Vilokkinen, Petri Melanen, Seppo Orsila, Petteri Uusimaa, Pekka Savolainen, Markus Pessa

Proceedings Volume 4286, (2001) https://doi.org/10.1117/12.424802

KEYWORDS: Vertical cavity surface emitting lasers, Aluminum, Gallium, External quantum efficiency, Aluminium gallium indium phosphide, Quantum wells, Molecular beam epitaxy, Reflectivity, Mirrors, Metals

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Proceedings Article | 29 November 2000 Paper

Paper

Influence of oxygen incorporation on beryllium- and silicon-doped InP grown by solid source molecular beam epitaxy

Ning Xiang, Jari Likonen, Jani Turpeinen, Mika Saarinen, Mika Toivonen, Markus Pessa

Proceedings Volume 4086, (2000) https://doi.org/10.1117/12.408321

KEYWORDS: Oxygen, Silicon, Beryllium, Phosphorus, Solids, Molecular beam epitaxy, Doping, Optical properties, Luminescence, N-type semiconductors

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Proceedings Article | 17 April 2000 Paper

Paper

Resonant-cavity LEDs at 655- and 880-nm wavelengths

Pekko Sipilae, Mika Saarinen, Ville Vilokkinen, Seppo Orsila, Petri Melanen, Pekka Savolainen, Mika Toivonen, Mihail Dumitrescu, Markus Pessa

Proceedings Volume 3938, (2000) https://doi.org/10.1117/12.382816

KEYWORDS: Quantum wells, Light emitting diodes, Mirrors, Epoxies, Polymer optical fibers, Thulium, Modulation, Telecommunications, Refractive index

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Proceedings Article | 3 April 2000 Paper

Paper

Novel high-power red laser diode transverse structure

Mihail Dumitrescu, Seppo Orsila, Pekka Savolainen, Mika Toivonen, Markus Pessa

Proceedings Volume 3889, (2000) https://doi.org/10.1117/12.380901

KEYWORDS: Quantum wells, Semiconductor lasers, Cladding, Refractive index, Near field optics, GRIN lenses, Optical simulations, Waveguides, Metalorganic chemical vapor deposition, High power lasers

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Proceedings Article | 23 February 2000 Paper

Paper

Resonant cavity light-emitting diodes: modeling, design, and optimization

Mihail Dumitrescu, Pekko Sipila, Ville Vilokkinen, L. Toikkanen, Petri Melanen, Mika Saarinen, Seppo Orsila, Pekka Savolainen, Mika Toivonen, Markus Pessa

Proceedings Volume 4068, (2000) https://doi.org/10.1117/12.378731

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Proceedings Article | 6 May 1999 Paper

Paper

Confocal photoluminescense microscopy in II-VI materials: annealing and degradation dynamics

Eithne McCabe, Christopher Jordan, D. Fewer, John Donegan, S. Taniguchi, T. Hino, Kazushi Nakano, Akira Ishibashi, Petteri Uusimaa, Markus Pessa

Proceedings Volume 3605, (1999) https://doi.org/10.1117/12.347591

KEYWORDS: Confocal microscopy, Annealing, Semiconductor lasers, Quantum wells, Microscopes, Luminescence, Objectives, Microscopy, Semiconductors, Gallium arsenide

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Proceedings Article | 14 April 1999 Paper

Paper

Solid-source molecular beam epitaxy growth and characteristics of resonant cavity light-emitting diodes

Mika Saarinen, Seppo Orsila, Mika Toivonen, Pekka Savolainen, Tiina Kuuslahti, Ville Vilokkinen, Petri Melanen, Pekko Sipilae, Markus Pessa

Proceedings Volume 3621, (1999) https://doi.org/10.1117/12.344482

KEYWORDS: Reflectivity, Light emitting diodes, Molecular beam epitaxy, Mirrors, Semiconductors, Phosphorus, Doping, Luminescence, Semiconducting wafers, Resistance

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Proceedings Article | 1 April 1999 Paper

Paper

High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy

Seppo Orsila, Mika Toivonen, Pekka Savolainen, Ville Vilokkinen, Petri Melanen, Markus Pessa, Mika Saarinen, Petteri Uusimaa, Pat Corvini, Fang Fang, Mitch Jansen, Rashit Nabiev

Proceedings Volume 3628, (1999) https://doi.org/10.1117/12.344531

KEYWORDS: Molecular beam epitaxy, Semiconductor lasers, Indium gallium phosphide, High power lasers, Solids, Reliability, Gallium arsenide, Metalorganic chemical vapor deposition, Arsenic, Phosphorus

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Proceedings Article | 7 July 1998 Paper

Paper

ZnSe-based light emitters grown on wide-gap III-V buffer layers

Petteri Uusimaa, Arto Salokatve, Pekka Savolainen, A. Rinta-Moykky, Markus Pessa, A. Souifi, R. Adhiri, George Kiriakidis, K. Moschovis, J. Stoimenos

Proceedings Volume 3283, (1998) https://doi.org/10.1117/12.316674

KEYWORDS: Interfaces, Gallium arsenide, Light emitting diodes, Semiconductor lasers, Crystals, Reflectivity, Optical microcavities, Metals, Quantum wells, Doping

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Proceedings Article | 7 April 1998 Paper

Paper

High-power diode lasers grown by solid-source MBE

Markus Pessa, Marco Jalonen, Arto Salokatve, Pekka Savolainen, Mika Toivonen, Richard Murison, Tullio Panarello, Michael Jansen, Pat Corvini

Proceedings Volume 3284, (1998) https://doi.org/10.1117/12.304439

KEYWORDS: Semiconductor lasers, Gallium arsenide, Quantum wells, High power lasers, Reliability, Semiconducting wafers, Laser damage threshold, Oxides, Metalorganic chemical vapor deposition, Failure analysis

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Proceedings Article | 12 April 1996 Paper

Paper

State-of-the-art aluminium-free 980-nm laser diodes

Markus Pessa, Jari Nappi, Pekka Savolainen, Alexander Ovtchinnikov, Mika Toivonen, Richard Murison, Harry Asonen

Proceedings Volume 2682, (1996) https://doi.org/10.1117/12.237656

KEYWORDS: Semiconductor lasers, Failure analysis, Quantum wells, Optical amplifiers, Fiber lasers, Fiber coupled lasers, Reliability, Indium gallium phosphide, Waveguides, Absorption

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SPIE Journal Paper | 1 September 1995

Recent advances in compound semiconductor technology

Markus Pessa, Harry Asonen

OE, Vol. 34, Issue 09, (September 1995) https://doi.org/10.1117/12.10.1117/12.208114

KEYWORDS: Compound semiconductors, Avalanche photodetectors, Optoelectronic devices, Solar energy, Gallium, Indium, Molecular beam epitaxy, Gallium arsenide, Semiconductor lasers, Optical fibers

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Proceedings Article | 24 April 1995 Paper

Paper

Aluminum-free 980-nm laser diodes for Er-doped optical fiber amplifiers

Markus Pessa, Jari Nappi, Alexander Ovtchinnikov, Pekka Savolainen, Harry Asonen

Proceedings Volume 2397, (1995) https://doi.org/10.1117/12.206883

KEYWORDS: Optical amplifiers, Semiconductor lasers, Quantum wells, Gallium arsenide, Reliability, Fiber amplifiers, Optical fibers, Fiber lasers, Waveguides, Cladding

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Proceedings Article | 5 August 1994 Paper

Paper

Recent advances in Al-free 980-nm pump lasers

Markus Pessa, Jari Nappi, Alexander Ovtchinnikov, Guodong Zhang, Pekka Savolainen, Harry Asonen

Proceedings Volume 2321, (1994) https://doi.org/10.1117/12.182188

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Proceedings Article | 1 August 1992 Paper

Paper

GaAs planar doped barrier diodes for microwave applications

Bela Szentpali, Vo Tuyen, M. Nemeth-Sallay, Arto Salokatve, Harry Asonen, Markus Pessa

Proceedings Volume 1783, (1992) https://doi.org/10.1117/12.131009

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Proceedings Article | 1 March 1991 Paper

Paper

Electrical and optical properties of As- and Li-doped ZnSe films

Kurt Hingerl, Jarmo Lilja, Mika Toivonen, Markus Pessa, Wolfgang Jantsch, Donat As, W. Rothemund, P. Juza, Helmut Sitter

Proceedings Volume 1361, (1991) https://doi.org/10.1117/12.24321

KEYWORDS: Optical properties, Lithium, Arsenic, Doping

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Proceedings Article | 1 March 1991 Paper

Paper

Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials

Markus Pessa, T. Hakkarainen, Jari Keskinen, Keijo Rakennus, Arto Salokatve, Guodong Zhang, Harry Asonen

Proceedings Volume 1361, (1991) https://doi.org/10.1117/12.24378

KEYWORDS: Molecular beam epitaxy, Optoelectronics, Gallium arsenide, Heterojunctions, Interfaces, Laser optics, Photodetectors, Optical modulators

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Showing 5 of 48 publications

Proceedings Volume Editor (2)

SPIE Conference Volume | 14 April 2006

Semiconductor Lasers and Laser Dynamics II

SPIE Conference Volume | 1 September 2004

Semiconductor Lasers and Laser Dynamics

Conference Committee Involvement (3)

Optoelectronic Materials and Devices III

27 October 2008 | Hangzhou, China

Semiconductor Lasers and Laser Dynamics II

3 April 2006 | Strasbourg, France

Semiconductor Lasers and Laser Dynamics

27 April 2004 | Strasbourg, France

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