Electron-based diagnostics at the National Ignition Facility use Sandia’s Icarus sensors for ultrafast imaging. However, the electron detection performance of these sensors has remained mostly unknown. Previous work characterized the singulated Common Anode photodiode structure of the ”Furi” and ”Hippogriff” but did not include the Common Cathode photodiode structure of the Icarus. Using a fully fabricated Icarus sensor, we measured the cross-sectional geometries and modeled the expected performance; then, we measured the sensor’s EQE, quantum yield, and charge gain with an electron gun. These measurements were essential to understanding the space-charge limitations of the electron-based diagnostics that use them.
We present an approach for wafer-level rapid multi-modal defect non-destructive imaging of device-relevant GaN defects with high resolution and high sensitivity. The scanning GaN defects detection system is based on laser pump-and-probe photoluminescence and photothermal measurements that are compared to diode device reliability data from accelerated lifetime testing. This work hypothesis is that defects probed at optical frequencies can reliably predict reliability or performance issues of power electronic devices at near DC frequencies. Imaging, growth, and device data are correlated to validate the proposed multi-modal defect detection approach for detection of GaN defects relevant to power electronic devices.
Solid-state thermal neutron detectors are desired to replace 3He tube based technology for the detection of special
nuclear materials. 3He tubes have some issues with stability, sensitivity to microphonics and very recently, a shortage of
3He. There are numerous solid-state approaches being investigated that utilize various architectures and material
combinations. By using the combination of high-aspect-ratio silicon PIN pillars, which are 2 μm wide with a 2 μm
separation, arranged in a square matrix, and surrounded by 10B, the neutron converter material, a high efficiency thermal
neutron detector is possible. Besides intrinsic neutron detection efficiency, neutron to gamma discrimination is an
important figure of merit for unambiguous signal identification. In this work, theoretical calculations and experimental
measurements are conducted to determine the effect of structure design of pillar structured thermal neutron detectors
including: intrinsic layer thickness, pillar height, substrate doping and incident gamma energy on neutron to gamma
discrimination.
Solid-state thermal neutron detectors are desired to replace 3He tube tube-based technology for the detection of special
nuclear materials. 3He tubes have some issues with stability, sensitivity to microphonics and very recently, a shortage of
3He. There are numerous solid-state approaches being investigated that utilize various architectures and material
combinations. Our approach is based on the combination of high-aspect-ratio silicon PIN pillars, which are 2 μm wide
with a 2 μm separation, arranged in a square matrix, and surrounded by 10B, the neutron converter material. To date, our
highest efficiency is ~ 20 % for a pillar height of 26 μm. An efficiency of greater than 50 % is predicted for our device,
while maintaining high gamma rejection and low power operation once adequate device scaling is carried out.
Estimated required pillar height to meet this goal is ~ 50 μm. The fabrication challenges related to 10B deposition and
etching as well as planarization of the three-dimensional structure is discussed.
Solid state thermal neutron detectors are desirable for replacing the current 3He based technology, which has some
limitations arising from stability, sensitivity to microphonics and the recent shortage of 3He. Our approach to designing
such solid state detectors is based on the combined use of high aspect ratio silicon PIN pillars surrounded by 10B, the
neutron converter material. To date, our highest measured detection efficiency is 20%. An efficiency of greater than
50% is expected while maintaining high gamma rejection, low power operation and fast timing for multiplicity counting
for our engineered device architecture. The design of our device structure, progress towards a nine channel system and
detector scaling challenges are presented.
For applications in space systems, devices based on novel nanomaterials offer significant advantages over traditional
technologies in terms of light-weight and efficiency. Examples of such novel devices include quantum dot (QD) based
solar cells and photodetectors. However, the response of these devices to radiation effects is not well understood, and
radiation effects modeling tools are not yet available. In this paper we review our numerical models and experimental
investigation of radiation effects in quantum dot based solar cells. In the natural, high-radiation environment of space all
solar cells suffer from degradation. Although some studies have been conducted, and test data collected, on the
performance of solar cells in a radiation environment, the mechanisms of radiation-induced degradation of quantum dot
superlattices (QDS) has yet to be established. We have conducted proton irradiation experiments to provide a direct
comparison of radiation hardness of quantum dot based cells and regular solar cells. An approach to the development of
Nano-scale Technology Computer Aided Design (NanoTCAD) simulation software for simulation of radiation effects in
QDS-based photovoltaic (PV) devices is presented. The NanoTCAD tools are based on classical drift-diffusion and
quantum-mechanical models for the simulation of QD PV cells.
Intermediate-band (IB) solar cells were predicted to have the photovoltaic (PV) efficiency exceeding the Shockley-Queisser limit for a single junction cell. A possible practical implementation of the IB solar cells can be based on the
quantum dot superlattices (QDS). The parameters of such QDS structure have to be carefully tuned in order to achieve
the desired charge carrier dispersion required for the IB solar cell operation. We used the first-principle theoretical
models for calculating the carrier states and light absorption in QDS. This approach allowed us to determine the actual
dimensions of the quantum dots and the inter-dot spacing for inducing the carrier miniband in the band-gap region where
the miniband can play the role of the IB. Using the Shockley-Queisser detailed balance theory we determined that the
upper-bound PV efficiency of such IB solar cells can be as high as ~ 51%. The required QDS dimensions for the IB
implementation on the basis of InAsN/GaAsSb are technologically challenging but feasible: ~ 2 - 6 nm. The proposed
computational design approach may help with implementation of other solar cell concepts for advanced light-to-energy
conversion enabled by nanostructures.
Metalorganic vapor phase epitaxy (MOVPE) of GaSb/InGaAsSb multilayer thin films and fabrication of bias-selectable dual band photodetectors are reported. For the dual band photodetectors the short wavelength detector, or the upper p-GaSb/n-GaSb junction photodiode, is placed optically ahead of the long wavelength one, or the lower photodiode. The latter is based on latticed-matched In0.13Ga0.87As0.11Sb0.89with bandgap near 0.6 eV. Specifically, high quality multilayer thin films are grown sequentially from top to bottom as p+-GaSb/p-GaSb/n-GaSb/n-InGaAsSb/p-InGaAsSb/p-GaSb on undoped p-type GaSb substrate, and as n-GaSb/p-GaSb/p-InGaAsSb/n-InGaAsSb/n-GaSb on Te-doped n-type GaSb substrate respectively. The multilayer thin films are characterized by optical microscope, atomic force microscope (AFM), electron microprobe analyses etc. The photodiode mesa steps are patterned by photolithography with wet chemical etching and the front metallization is carried out by e-beam evaporation with Pd/Ge/Au/Ti/Au to give ohmic contact on both n- and p-type Sb based layer surfaces. Dark I-V measurements show typical diode behavior for both the upper and lower photodiodes. The photoresponsivity measurements indicate that both the upper and lower photodiodes can sense the infrared illumination corresponding to their cutoff wavelengths respectively, comparable with the simulation results. More work is underway to bring the long wavelength band to the medium infrared wavelength region near 4 μm.
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