The grouping method assisted EPE-aware control method is being explored in a multi-feature dual layer Logic use case. EPE metric is estimated using angle resolved optical Scatterometry based overlay and electron beam-based metrology (large field of view SEM) for the reconstruction of edge-to-edge distance between the Metal and Via pattern. In the setup phase, EPE sensitivities to dose and focus have been derived using data from a FEM wafer. EPE-aware optimization, using scanner dose and overlay control sub-recipes, outperforms traditional optimization in simulations showing reduced EPE max per die. This improvement suggests a potential increase in device yield through the adoption of EPE-aware control strategies. To verify this performance improvement on wafers, an experiment is needed with minimal wafer to wafer and lot to lot variations which can be achieved by reducing time between lots and increasing the number of wafers measured.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.