CdTe thin films are obtained by on glass substrates by vacuum vapor deposition. This work mainly presents the optical and electrical characteristics of the CdTe films by varying stoichiometry of Cd and Te, doping-In and thermal treatment with N2. The variation of band gap and absorption coefficient is studied as well as the resistivity. The results show that the undoped-In samples have very high resistivity on which thermal treatment has little effect, which proves that the undoped CdTe thin film is high resistivity semiconductor. On the other hand, the resistivity of the doped-In samples decreases after thermal treatment. In general, the optical and electrical characteristics of the prepared CdTe thin film can be improved by proper doping and thermal treatment.
CdTe film can be prepared on the glass by vacuum vapor deposition. We change the stoichiometry of Cd:Te, dope In, and thermally treat the samples in N2. Then, the compositions, structure, and grain size are studied by XRD, SEM and AES. The results reveal that the surface morphology and microstructures of the samples are improved after thermal treatment, In is incorporated into CdTe, and forms CdTe:In. Moreover, the preferential growth orientation along <111> appears.
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