Mr. Ruben G. Ghulghazaryan Profile

Ruben G. Ghulghazaryan

at Siemens Industry Software

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Publications (6)

Proceedings Article | 22 February 2021 Presentation + Paper

Guard-banding of IP against topography sensitivity using silicon-calibrated CMP model

Ushasree Katakamsetty, Sam Nakagawa, Ernesto Gene de la Garza, Ruben Ghulghazaryan, Davit Piliposyan, Simon Favre, Jeff Wilson

Proceedings Volume 11614, 116140Y (2021) https://doi.org/10.1117/12.2585488

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In semiconductor manufacturing, intellectual property (IP) cores/blocks play a dominant role in modern chip design. The driving factor for IP usage is the time-to-market benefit delivered through design reuse. Today, IP blocks include the entire range of modules, ranging from standard cells, memories, and I/O devices to CPUs. Chip designers need complex IP blocks because modern levels of integration allow chips to be a complete system on chip (SOC), not just components of systems. However, as chips become more complex, IP blocks are subject to more interactions from multiple neighboring modules in the chip. Current IP block quality assurance (QA) flows focus mainly on functional verification, performance verification, and design rule checking (DRC). The standard DRC deck checks for minimum and maximum density rules within the IP block. However, when an IP is placed in an SOC, it may encounter complex surrounding scenarios, as when a low density IP is placed next to a higher density area. During integrated circuit (IC) manufacturing, the resulting proximity effects may cause failures or electrical targeting mismatches within the IP, due to etch micro-loading and long-range CMP interactions. Designers can only locate these chemical mechanical polishing (CMP) hotspots related to IP placement in the SOC near the end of the design flow, which limits any floorplan changes to fix the hotspots. Standalone IP block QA is insufficient to detect possible layout- or floorplan-induced problems that can affect manufacturing. In this paper, we present a CMP modeling methodology to guard-band IP against topography variations that can occur after IP placement in the SOC design. We emulate low, average, and high-density scenarios surrounding the IP blocks, followed by CMP simulations and hotspot detection using silicon-calibrated CMP models. After simulation, guidelines provided to fix these CMP hotspots surrounding the IP blocks during early design stages to improve manufacturability and yield. This flow will make IPs robust from CMP hotspots that typically appear after SOC floorplanning.

Proceedings Article | 23 March 2020 Paper

CMP simulation-based dummy fill optimization

Liwei Jiang, Yun Cao, Jiao Zhang, Fang Wei, Zhengfang Liu, Chunshan Du, Ruben Ghulghazaryan, Davit Piliposyan, Jeff Wilson, Qijian Wan, Xinyi Hu, Zhixi Chen

Proceedings Volume 11328, 1132817 (2020) https://doi.org/10.1117/12.2551681

KEYWORDS: Chemical mechanical planarization, Manufacturing, Optimization (mathematics), Copper, Design for manufacturing, Lithography, Modeling and simulation, Product engineering, Semiconducting wafers, Model-based design

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Proceedings Article | 20 March 2019 Paper

Copper interconnect topography simulation in 3D NAND designs

Yang Li, Rick Li, Peng Jiang, Luming Fan, Aman Zheng, Sicong Wang, Guangyi Wang, Zhengfang Liu, Chunshan Du, Ruben Ghulghazaryan, Qijian Wan, Xinyi Hu

Proceedings Volume 10962, 1096210 (2019) https://doi.org/10.1117/12.2515161

KEYWORDS: Chemical mechanical planarization, 3D modeling, Manufacturing, Process modeling, Data modeling, Copper, Semiconducting wafers, Back end of line, Chemical vapor deposition, Design for manufacturability

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Proceedings Article | 20 March 2019 Paper

FEOL CMP modeling challenges and solution in 3D NAND

Yang Li, Rick Li, Peng Jiang, Luming Fan, Aman Zheng, Sicong Wang, Guangyi Wang, Chunshan Du, Zhengfang Liu, Ruben Ghulghazaryan, Qijian Wan, Xinyi Hu

Proceedings Volume 10962, 1096211 (2019) https://doi.org/10.1117/12.2515167

KEYWORDS: Chemical mechanical planarization, 3D modeling, Data modeling, Front end of line, Calibration, Polishing, Oxides, Manufacturing, Process modeling, Transmission electron microscopy

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Proceedings Article | 18 March 2015 Paper

20nm CMP model calibration with optimized metrology data and CMP model applications

Ushasree Katakamsetty, Dinesh Koli, Sky Yeo, Colin Hui, Ruben Ghulghazaryan, Burak Aytuna, Jeff Wilson

Proceedings Volume 9427, 94270U (2015) https://doi.org/10.1117/12.2085728

KEYWORDS: Chemical mechanical planarization, Data modeling, Metrology, Semiconducting wafers, Calibration, Manufacturing, Visualization, Metals, Polishing, Surface finishing

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Proceedings Article | 3 April 2010 Paper

Using a highly accurate self-stop Cu-CMP model in the design flow

Kyoko Izuha, Takashi Sakairi, Shunichi Shibuki, Monalisa Bora, Osama Hatem, Ruben Ghulghazaryan, Norbert Strecker, Jeff Wilson, Noritsugu Takeshita

Proceedings Volume 7641, 76410V (2010) https://doi.org/10.1117/12.845653

KEYWORDS: Data modeling, Copper, Chemical mechanical planarization, Metals, Polishing, Calibration, Electroplating, Process modeling, Optimization (mathematics), Semiconducting wafers

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Showing 5 of 6 publications

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