KEYWORDS: Organic light emitting diodes, Near field, Deep ultraviolet, Light sources, Solid state lighting, Photometry, Near field optics, Semiconductors, Light sources and illumination, Light emitting diodes
Organic Light Emitting Diode (OLED) technology is rapidly maturing to be ready for next generation of light source for
general lighting. The current standard test methods for solid state lighting have evolved for semiconductor sources, with
point-like emission characteristics. However, OLED devices are extended surface emitters, where spatial uniformity and
angular variation of brightness and colour are important. This necessitates advanced test methods to obtain meaningful
data for fundamental understanding, lighting product development and deployment. In this work, a near field imaging
goniophotometer was used to characterize lighting-class white OLED devices, where luminance and colour information
of the pixels on the light sources were measured at a near field distance for various angles. Analysis was performed to
obtain angle dependent luminous intensity, CIE chromaticity coordinates and correlated colour temperature (CCT) in the
far field. Furthermore, a complete ray set with chromaticity information was generated, so that illuminance at any
distance and angle from the light source can be determined. The generated ray set is needed for optical modeling and
design of OLED luminaires. Our results show that luminance non-uniformity could potentially affect the luminaire
aesthetics and CCT can vary with angle by more than 2000K. This leads to the same source being perceived as warm or
cool depending on the viewing angle. As OLEDs are becoming commercially available, this could be a major challenge
for lighting designers. Near field measurement can provide detailed specifications and quantitative comparison between
OLED products for performance improvement.
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