Portable and wearable sensing devices are growing increasingly essential to people's lives as a result of the seriousness of air pollution and the rapid advancement of nanotechnology. The rGO/WO3/PVDF tertiary nanocomposite is employed as a monitoring device and boasts benefits like remarkable selectivity for ammonia hazardous gas, good responsiveness (Rg/Ra = 4.72, 50 ppm), and excellent linear sensitivity (10-500 ppm). Most crucially, the self-powered rGO/WO3/PVDF monitoring unit has a substantially quicker response/recovery time than the typical room-temperature semiconductor gas sensor. The viability of the tertiary nanocomposite for applications requiring self-powered ammonia gas sensing is demonstrated through a proof of concept demonstration.
The Ge1-xSnx material system has been introduced as a potential solution for low-cost high-performance photodetector for short-wave infrared towards mid-infrared detections. An investigation of GeSn/SiGeSn nanostructure layer is reported for sensors for near and mid-infrared applications. Physics-based models will be developed for SiGeSn/GeSn based nanostructured sensors considering the carrier dynamics at hetero-interface, misfit dislocation and strain at the interface. We analyze the effect of biaxial strain on SiGeSn/GeSn alloys and determine the range of wavelength for the possible application in near and midinfrared range.
This work emphasizes on the comparative study of tin based group IV single and multiple quantum well photodetector in absence of light. Initially, the designs of the single quantum well infrared photodetector (SQWIP) and multiple quantum well infrared photodetector (MQWIP) are proposed and explained along with considerations. Dark current and detectvity is calculated by using rate equations considering carrier transfer mechanism in MQWIP and SQWIP. The result reveals that dark current in the order of microampere is obtained for SQWIP but it can be reduced by increasing number wells. Significant peak detectivity in the range of 109 cm Hz1/2 W-1 is obtained for MQWIP at lower bias which is higher than that of SQWIP. However judicious selection of proper bias and number of well is required for optimized operation of MQWIP.
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