Imec’s AttoLab is the first industrial laboratory capable of watching the ultrafast dynamics of photoresists following 13.5 nm, EUV exposure, and for emulating high-numerical-aperture (high-NA) exposure on 300-mm wafers using two-beam EUV interference. The two respective beamlines are powered by a laser-based high-harmonic generation EUV source. Its capabilities have recently been proven by imaging 20 nm pitch lines and spaces using Lloyd’s Mirror interference lithography. In parallel, time-averaged and time-resolved techniques for studying the ultrafast dynamics of photoresists after EUV exposure, coherent diffractive imaging to study resist interfaces, and more sophisticated interference lithography techniques for printing sub-22 nm pitches on full 300-mm wafers are being developed. Taking advantage of the bright and short EUV pulses now available at imec, we will be able to contribute to a smooth transition towards next generation high-NA lithography.
Recently, imec has installed and commissioned an industrial, ultrafast EUV materials characterization and lithography lab, imec’s AttoLab, with a primary aim to explore limits of photoresist performance and their associated ultrafast chemistries. Here, we demonstrate, for the first time, the use of a table-top, high-harmonic EUV system (KM Labs, XUUS4) to perform interference lithography of sub-22-nm pitch patterns in an Inpria MOx resist via a Lloyd’s mirror interference lithography (IL) tool. Analysis of SEM images enables us to identify potential sources of image blur, which we attribute to out-of-sync vibrations, flare, spectral purity, and laser stability. Nevertheless, these results confirm the ability of table-top, high-harmonic EUV sources to print lithographic patterns below a 22-nm pitch. In future work, we plan to investigate sub-20-nm patterning in different resist formulations, as well as expand the lithographic capabilities in AttoLab to perform IL on full 300-mm wafers.
X-ray absorption fine-structure (XAFS) spectroscopy is a well-established technique capable of extracting information about a material’s electronic and lattice structure with atomic resolution. While the near-edge region (XANES) of a XAFS spectrum provides information about the electronic configuration, structural information is extracted from the extended XAFS (EXAFS) spectrum, consisting of several hundreds of eV above the absorption edge. With the advent of high harmonic sources, reaching photon energies in soft x-ray (SXR) region, it now becomes possible to connect the spectroscopic capabilities of XAFS to the unprecedented attosecond temporal resolution of a high harmonic source allowing the observation of electronic and lattice dynamics in real time [1,2].
Layered materials, such the transition-metal dichalcogenide TiS2 or graphite, are an emerging class of materials with attractive structural and electronic properties as they can be thinned to a single atomic layer with electron mobilities resembling that of a metal, semiconductor, or semi-metal.
In this work, we utilized broadband water-window-covering attosecond SXR pulses (300 as, ranging from 200
- 550 eV) capable of accessing orbital-specific K- and L-edges of such layered materials to perform transient XAFS
with attosecond time resolution [3,4].
[1] Teichmann, S. et al, "0.5-keV soft x-ray attosecond continua", Nat. Commun. 7, 11493 (2016).
[2] Cousin S. et al, "Attosecond streaking in the water window: a new regime of attosecond pulse characterization", Phys. Rev. X, 7, 041030 (2017).
[3] Buades, B. et al., “Dispersive soft x-ray absorption fine-structure spectroscopy in graphite with an attosecond pulse”, Optica 5 (5), 502 (2018).
[4] Buades, B. et al., “Attosecond-resolved petahertz carrier motion in semi-metallic TiS2”, arXiv: 1808.06493 (2018).
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