Dr. Sourabh Upadhyay Profile

Dr. Sourabh Upadhyay

Research Associate at Indian Institute of Technology Bombay

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Publications (7)

Proceedings Article | 5 March 2022 Poster + Paper

High energy proton implantation effect on the emission wavelength and strain phenomenon of strain coupled InAs/In(Ga)As submonolayer (SML) QDs and Stranski-Krastanov (SK) QDs

Samishta Choudhary, Debabrata Das, Saurabh Upadhyay, Debiprasad Panda, Anindya Dutta, Subhananda Chakrabarti

Proceedings Volume 12010, 120100F (2022) https://doi.org/10.1117/12.2610567

KEYWORDS: Gallium arsenide, Quantum dots, Indium arsenide, Ions, Heterojunctions, Luminescence, Ion implantation, Quantum wells, Electronics, Photodetectors

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Proceedings Article | 28 May 2019 Presentation + Paper

MBE-grown InGaAs/GaAs quantum-dots on Ge substrate: An idea towards optoelectronic integration on silicon

Raman Kumar, Ravinder Kumar, Debiprasad Panda, Jhuma Saha, Binita Tongbram, Debabrata Das, Sourabh Upadhyay, Arka Chatterjee, Samir Kumar Pal, Subhananda Chakrabarti

Proceedings Volume 10929, 109290C (2019) https://doi.org/10.1117/12.2508464

KEYWORDS: Heterojunctions, Germanium, Gallium arsenide, Quantum dots, Silicon, Optical properties, Optoelectronics integration, Luminescence, Optoelectronic devices

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Proceedings Article | 1 March 2019 Presentation + Paper

Enhanced optical and structural properties of MBE-grown AlGaN nanowires on Si substrate by H-ion implantation and UV ozone treatment

Raman Kumar, Ravinder Kumar, Debiprasad Panda, Mahitosh Biswas, Sourabh Upadhyay, Debabrata Das, Songrui Zhao, Zetian Mi, Subhananda Chakrabarti

Proceedings Volume 10918, 109180A (2019) https://doi.org/10.1117/12.2508490

KEYWORDS: Nanowires, Ultraviolet radiation, Silicon, Ozone, Ion implantation, Scanning electron microscopy, Molecular beam epitaxy

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Proceedings Article | 14 May 2018 Paper

Improvement in NEDT characteristics of InAs/GaAs quantum dot based 320x256 focal plane array implanted with hydrogen ions

S. Upadhyay, D. P. Panda, D. Das, N.B.V. Subrahmanyam, P. Bhagwat, S. Chakrabarti

Proceedings Volume 10624, 1062423 (2018) https://doi.org/10.1117/12.2305069

KEYWORDS: Ions, Heterojunctions, Hydrogen, Quantum dots, Gallium arsenide, Photodetectors

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Proceedings Article | 21 February 2018 Presentation + Paper

Impact of phosphorus ion implantation on the material and optical properties of InAs/GaAs quantum dots

S. Upadhyay, A. Mandal, V. Chavan, N. B. V. Subrahmanyam, P. Bhagwat, S. Chakrabarti

Proceedings Volume 10543, 1054309 (2018) https://doi.org/10.1117/12.2289543

KEYWORDS: Ions, Phosphorus, Gallium arsenide, Ion implantation, Optical properties, Quantum dots, Satellites, Heterojunctions, Indium arsenide, Luminescence

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Proceedings Article | 26 September 2016 Presentation + Paper

Effect of lithium ion implantation on the luminescence properties of InAs/GaAs quantum dots

S. Upadhyay, N. B. Subrahmanyam, S. K. Gupta, P. Bhagwat, S. Chakrabarti

Proceedings Volume 9933, 993305 (2016) https://doi.org/10.1117/12.2237632

KEYWORDS: Ion implantation, Lithium, Quantum dots, Gallium arsenide, Ions, Luminescence, Indium arsenide, Heterojunctions, Energy efficiency, Group III-V semiconductors

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Proceedings Article | 13 May 2015 Paper

Effect of high energy proton implantation on the device characteristics of InAlGaAs-capped InGaAs/GaAs quantum dot based infrared photodetectors

S. Upadhyay, A. Mandal, H. Ghadi, D. Pal, N. B. Subrahmanyam, P. Singh, S. Chakrabarti

Proceedings Volume 9481, 94810T (2015) https://doi.org/10.1117/12.2181564

KEYWORDS: Infrared radiation, Gallium arsenide, Quantum dots, Photodetectors, Quantum well infrared photodetectors, Infrared photography, Long wavelength infrared, Ions, Luminescence, Chemical species

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Showing 5 of 7 publications

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